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We took HX-PES measurement (Si 1s) on ultra shallow plasma doped silicon samples before and after spike RTA, flash lamp anneal (FLA) and all solid-state laser anneal (ASLA) in SPring-8 for the first time. After PD, the carrier density of n-Si substrate decreased to intrinsic Si level due to defect induced carrier traps. After annealing by either spike RTA or FLA, the PD samples showed excellent chemical binding states with high impurity activation and recrystallization. After annealing by ASLA, PD samples showed ultimate high impurity activation at surface several nanometer layer. © 2006 American Institute of Physics [ABSTRACT FROM AUTHOR]

Recently, we have shown that hard X-ray photoemission spectroscopy (HX-PES) using undulator X-rays at SPring-8 is quite feasible with both high resolution and high throughput. Here we report an application of HX-PES to the characterization of electronic and chemical states of ultra shallow plasma doped samples. We found that the shift in chemical binding energy by impurity activation can be measured with high accuracy. The binding energy of Si 1s changes according to the shift in Fermi level as the carrier concentration varies. Thus, the active carrier concentration of ultra-shallow junction region can be measured by non-destructive HX-PES with high accuracy. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR]