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This paper explains the physical behavior of the electron density of high-power and large-volume plasma wind tunnel using a single channel hydrogen cyanide (HCN) laser interferometer. Based on the characteristics of inductively coupled plasma (ICP)-heated wind tunnel, the temperature and pressure distribution of the ICP-heated wind tunnel are obtained from numerical simulations, during which the influence of neutral particles is considered to calculate the accurate electron density. The typical electron density order of ICP-heated wind tunnel is 10 18 m − 3 . We discovered that there is a positive correlation between the electron density of argon plasma jet and mass flow rate, while that of air plasma jet decreases slightly. We also found that the peak of electron density appears when the argon is switched to air. Within the voltage range of 6–10 kV, the electron density of argon and air plasma increases slowly. However, when the voltage increases from 10 to 12 kV, the electron density of air plasma increases sharply with the mass flow rate of 15 g/s. Finally, the electron density of argon plasma is much higher than that of air plasma at the same mass flow rate and voltage. [ABSTRACT FROM AUTHOR]

A 2D drift diffusion fluid model was employed to study the plasma uniformity of different capacitively coupled plasma (CCP) in argon discharges based on the COMSOL platform. The numerical results show that compared with the traditional CCP device that discharges between plates, the plasma uniformity of CCP device discharge by inner capacitors (CCP-ICD) has been significantly improved overall. Then, the influence of the number of capacitors and the capacitor spacing on the plasma uniformity of CCP-ICD was analyzed. The plasma uniformity can reach 89.5% in the radial direction under the best parameters, but the electron number density is reduced by an order of magnitude. In order to obtain a CCP source with high density and better uniformity, a new multi-directional source CCP-ICD was designed and numerically analyzed. The simulation results show that the new multi-directional source CCP-ICD can improve the uniformity in both radial and axial directions by about 40% without reducing the plasma density. The above conclusions show that the multi-directional source CPP-ICD device designed in this paper has great application prospects in the microelectronic and semiconductor industries. [ABSTRACT FROM AUTHOR]