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Antimony selenide (Sb 2 Se 3) is regarded as one of the key alternative absorber materials for conventional thin film solar cells due to its excellent optical and electrical properties. Here, we proposed a Sb 2 Se 3 thin film solar cell fabricated using a two-step process magnetron sputtering followed by a post-selenization treatment, which enabled us to optimize the best quality of both the Sb 2 Se 3 thin film and the Sb 2 Se 3 /CdS heterojunction interface. By tuning the selenization parameters, a Sb 2 Se 3 thin film solar cell with high efficiency of 6.06% was achieved, the highest reported power conversion efficiency of sputtered Sb 2 Se 3 planar heterojunction solar cells. Moreover, our device presented an outstanding open circuit voltage (V OC) of 494 mV which is superior to those reported Sb 2 Se 3 solar cells. State and density of defects showed that proper selenization temperature could effectively passivate deep defects for the films and thus improve the device performance. Image 1 • A promising sputtered and post-selenized Sb 2 Se 3 thin film was present. • Orientation, morphology, composition and defect passivation was depending on the post-selenized temperature. • Highest PCE of 6.06% for sputtered Sb 2 Se 3 planar heterojunction solar cells achieved. [ABSTRACT FROM AUTHOR]