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Silicon oxynitride (SiON) is a low-loss and versatile material for linear and nonlinear photonics applications. Controlling the oxygen-to-nitrogen (O/N) ratio in SiON provides an effective way to engineer its optical and mechanical properties, making it a great platform for the investigation of on-chip optomechanical interactions, especially the stimulated Brillouin scattering (SBS). Here we report the Brillouin nonlinearity characterization of a SiON platform with a specific O/N ratio (characterized by a refractive index of $n=1.65$). First, we introduce this particular SiON platform with fabrication details. Subsequently, we discuss various techniques for the on-chip Brillouin nonlinearity characterizations. In particular, we focus on the intensity-modulated pump-probe lock-in amplifier technique, which enables ultra-sensitive characterization. Finally, we analyze the Brillouin nonlinearities of this SiON platform and compare them with other SiON platforms. This work underscores the potential of SiON for on-chip Brillouin-based applications. Moreover, it paves the way for Brillouin nonlinearity characterization across various material platforms.

Integrated photonics has emerged as one of the most promising platforms for quantum applications. The performances of quantum photonic integrated circuits (QPIC) necessitate a demanding optimization to achieve enhanced properties and tailored characteristics with more stringent requirements with respect to their classical counterparts. In this study, we report on the simulation, fabrication, and characterization of a series of fundamental components for photons manipulation in QPIC based on silicon nitride. These include crossing waveguides, multimode-interferometer-based integrated beam splitters (MMIs), asymmetric integrated Mach-Zehnder interferometers (MZIs) based on MMIs, and micro-ring resonators. Our investigation revolves primarily around the Visible to Near-Infrared spectral region, as these devices are meticulously designed and tailored for optimal operation within this wavelength range. By advancing the development of these elementary building blocks, we aim to pave the way for significant improvements in QPIC in a spectral region only little explored so far., Comment: 13 pages, 10 figures

The development of versatile and novel material platforms for integrated photonics is of prime importance in the perspective of future applications of photonic integrated circuits for quantum information and sensing. Here we present a low-loss material platform based on high-refractive index silicon oxynitride (\ce{SiON}), which offers significant characteristics for linear and non-linear optics applications in a wide range of red/near-infrared wavelengths. The demonstrated propagation loss $<1.5$~dB/cm for visible wavelengths enables the realization of long and intricate circuitry for photon manipulations, as well as the realization of high quality factor resonators. In addition, the proposed \ce{SiON} shows a high nonlinear coefficient of $10^{-19}$~m$^2$/W, improving the strength of nonlinear effects exploitable for on-chip photon generation schemes., Comment: 9 pages, 8 figures

We study the linear and nonlinear response of a unidirectional reflector where a nonlinear breaking of the Lorentz reciprocity is observed. The device under test consists of a racetrack microresonator, with an embedded S-shaped waveguide, coupled to an external bus waveguide (BW). This geometry of the microresonator, known as "taiji" microresonator (TJMR), allows to selectively couple counter-propagating modes depending on the propagation direction of the incident light and, at the nonlinear level, leads to an effective breaking of Lorentz reciprocity. Here, we show that a full description of the device needs to consider also the role of the BW, which introduces (i) Fabry-Perot oscillations (FPOs) due to reflections at its facets, and (ii) asymmetric losses, which depend on the actual position of the TJMR. At sufficiently low powers the asymmetric loss does not affect the unidirectional behavior, but the FP interference fringes can cancel the effect of the S-shaped waveguide. However, at high input power, both the asymmetric loss and the FPOs contribute to the redistribution of the energy between the clockwise and counterclockwise modes within the TJMR. This strongly modifies the nonlinear response, giving rise to counter-intuitive features where, due to the FP effect and the asymmetric losses, the BW properties can determine the violation of the Lorentz reciprocity and, in particular, the difference between the transmittance in the two directions of excitation. The experimental results are explained by using an analytical model based on the transfer matrix approach, a numerical finite-element model and exploiting intuitive interference diagrams., Comment: 12 pages, 10 figures

In this paper, we demonstrate strip-loaded guiding optical components realized on a 27 nm ultra-thin SOI platform. The absence of physically etched boundaries within the guiding core suppresses majorly the scattering loss, as shown by us previously for a silicon nitride (Si$_3$N$_4$) platform [Stefan \textit{et. al.}, OL 40, 3316 (2015)]. Unexpectedly, the freshly fabricated Si devices showed large losses of 5 dB/cm, originating from absorption by free carriers, accumulated under the positively charged Si$_3$N$_4$ loading layer. We use 254 nm ultraviolet (UV) light exposures to neutralize progressively and permanently silicon nitride's bulk charge associated with diamagnetic K+defects. This in turn leads to a net decrease of electron concentration in the SOI layer, reducing thus the propagation loss down to 0.9 dB/cm. Detailed MOS-capacitance measurements on test samples were performed to monitor the UV-induced modification of the electronic properties of the system. The evolution of loss mitigation was directly monitored both by Beer-Lambert approach in waveguide transmission experiments, as well as through more accurate cavity linewidth measurements. In the last case, we demonstrate how intrinsic cavity $Q$'s boost from 60,0000 to up to 500,000 after UV treatment. Our results may open routes towards engineering of new functionalities in photonic devices employing UV-modification of space charges and associated local electric fields, unveil the origin of induced optical nonlinearities in Si$_3$N$_4$/Si micro-photonic systems, as well as envisage possible integration of these with ultra-thin SOI electronics., Comment: 8 pages, 5 figures

We report on the modeling, simulation and experimental demonstration of complete mode crossings of Fano resonances within chip-integrated microresonators. The continuous reshaping of resonant lineshapes is achieved via nonlinear thermo-optical tuning when the cavity-coupled optical pump is partially absorbed by the material. The locally generated heat then produces a thermal field, which influences the spatially overlapping optical modes, allowing thus to alter the relative spectral separation of resonances. Furthermore, we exploit such tunability to probe continuously the coupling between different families of quasi-degenerate modes that exhibit asymmetric Fano-interactions. As a particular case, we demonstrate for the first time a complete disappearance of one of the modal features in the transmission spectrum as predicted by U. Fano [Phys. Rev. 124, 1866 (1961)]. The phenomenon is modeled as a third order non-linearity with a spatial distribution that depends on the stored optical field and the thermal diffusion within the resonator. The performed non-linear numerical simulations are in excellent agreement with the experimental results, which confirm the validity of the developed theory., Comment: 9 pages, 8 figures

In this chapter, first we will address principal aspects of 1D quasiperiodicity with a particular focus on 1D Fibonacci chains. Further, the rest of the chapter will be dedicated to the electromagnetic counterpart of 1D Fibonacci structures as a relatively simplest case of the large class of photonic quasicrystals., Comment: 16 pages, 17 figures, from "Light Localisation and Lasing", Eds. M. Ghulinyan, L. Pavesi, Cambridge Univ. Press (2015) Ch. 5, p. 99

In this paper we report on the measurement and modelling of enhanced optical refractometric sensors based on whispering-gallery-modes. The devices under test are optical microresonators made of silicon nitride on silicon oxide. In our approach, these microresonators are vertically coupled to a buried waveguide with the aim of creating integrated and cost-effective devices. The optimization analysis is a delicate balance of resonance quality factor and evanescent field overlap with the sorrounding environment to analyze. By numerical simulations we show that the microdisk thickness is critical to yield high figure of merit for the sensor, while edge inclination is less important. We also show that figures of merit as high as 1600/RIU are feasible., Comment: 10 pages

We report on a joint theoretical and experimental study of an integrated photonic device consisting of a single mode waveguide vertically coupled to a disk-shaped microresonator. Starting from the general theory of open systems, we show how the presence of a neighboring waveguide induces reactive inter-mode coupling in the resonator, analogous to an off-diagonal Lamb shift from atomic physics. Observable consequences of this coupling manifest as peculiar Fano lineshapes in the waveguide transmission spectra. The theoretical predictions are validated by full vectorial 3D finite element numerical simulations and are confirmed by the experiments., Comment: 5 pages, 5 figures

We report on the realization and optical characterization of a CMOS-compatible silicon-based microresonator/waveguide coupled system, fully integrated on a silicon chip. The device uses a vertical coupling scheme between the resonator and a buried strip waveguide. We demonstrate that its high optical quality follows from the accurate planarization of the waveguide topography. More importantly, we demonstrate a wafer-scale mass fabrication of freestanding planar resonators suspended in air and coupled to the integrated bus waveguides. A nanometer control of the coupling distances allows for a precise and selective excitation of different mode families of the resonator. This opens the door for the realization of stable all-integrated complex resonator systems for optomechanical and metrological applications, with the potential to substitute the nowadays intensive use of complicated fiber-taper coupling schemes., Comment: 3 pages, 3 figures

Owing to their ability to confine electromagnetic energy in ultrasmall dielectric volumes, micro-disk, ring and toroid resonators hold interest for both specific applications and fundamental investigations. Generally, contributions from various loss channels within these devices lead to limited spectral windows (Q-bands) where highest mode Q-factors manifest. Here we describe a strategy for tuning Q-bands using a new class of micro-resonators, named micro-kylix resonators, in which engineered stress within an initially flat disk results in either concave or convex devices. To shift the Q-band by 60nm towards short wavelengths in flat micro-disks a 50% diameter reduction is required, which causes severe radiative losses suppressing Q's. With a micro-kylix, we achieve similar tuning and even higher Q's by two orders of magnitude smaller diameter modification (0.4%). The phenomenon relies on geometry-induced smart interplay between modified dispersions of material absorption and radiative loss-related Q-factors. Micro-kylix devices can provide new functionalities and novel technological solutions for photonics and micro-resonator physics., Comment: 5 pages

We report on visible light emission from Si-nanocrystal based optically active microdisk resonators. The room temperature photoluminescence (PL) from single microdisks shows the characteristic modal structure of whispering-gallery modes. The emission is both TE and TM-polarized in 300 nm thick microdisks, while thinner ones (135 nm) support only TE-like modes. Thinner disks have the advantage to filter out higher order radial mode families, allowing for measuring only the most intense first order modal structure. We reveal subnanometer linewidths and corresponding quality factors as high as 2800, limited by the spectral resolution of the experimental setup. Moreover,we observe a modification of mode linewidth by a factor 13 as a function of pump power. The origin of this effect is attributed to an excited carrier absorption loss mechanism., Comment: 5 pages, 5 figures