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Ultracompact chip-integrated single-photon sources of collimated beams with polarizationencoded states are crucial for integrated quantum technologies. However, most of currently available single-photon sources rely on external bulky optical components to shape the polarization and phase front of emitted photon beams. Efficient integration of quantum emitters with beam shaping and polarization encoding functionalities remains so far elusive. Here, we present ultracompact single-photon sources of linearly polarized vortex beams based on chip-integrated quantum emitter-coupled metasurfaces, which are meticulously designed by fully exploiting the potential of nanobrick arrayed metasurfaces. We first demonstrate on-chip single-photon generation of high-purity linearly polarized vortex beams with prescribed topological charges of -1, 0, and +1. We further realize multiplexing of single-photon emission channels with orthogonal linear polarizations carrying different topological charges and demonstrate their entanglement. Our work illustrates the potential and feasibility of ultracompact quantum emitter-coupled metasurfaces as a new quantum optics platform for realizing chip-integrated high-dimensional single-photon sources., Comment: 17 pages and 4 figures in the main text; 22 pages and 14 figures in supplementary information

Channelling single-photon emission in multiple well-defined directions and simultaneously controlling its polarization characteristics is highly desirable for numerous quantum technology applications. We show that this can be achieved by using quantum emitters (QEs) nonradiatively coupled to surface plasmon polaritons (SPPs), which are scattered into outgoing free-propagating waves by appropriately designed metasurfaces. The QE-coupled metasurface design is based on the scattering holography approach with radially diverging SPPs as reference waves. Using holographic metasurfaces fabricated around nanodiamonds with single Ge vacancy centers, we experimentally demonstrate on-chip integrated efficient generation of two well-collimated single-photon beams propagating along different 15-degree off-normal directions with orthogonal linear polarizations.

Coherent exchange of single photons is at the heart of applied Quantum Optics. The negatively-charged silicon vacancy center in diamond is among most promising sources for coherent single photons. Its large Debye-Waller factor, short lifetime and extraordinary spectral stability is unique in the field of solid-state single photon sources. However, the excitation and detection of individual centers requires high numerical aperture optics which, combined with the need for cryogenic temperatures, puts technical overhead on experimental realizations. Here, we investigate a hybrid quantum photonics platform based on silicon-vacancy center in nanodiamonds and metallic bullseye antenna to realize a coherent single-photon interface that operates efficiently down to low numerical aperture optics with an inherent resistance to misalignment.

We have characterized thermal susceptibilities of the spectral band at 740 nm of silicon-vacancy (SiV) centers in Si- and Si,P-doped nanodiamonds over a temperature range from 295 K to 350 K, which is of interest for thermometry in biological systems. Si-doped crystals reveal linear dependence of the SiV zero-phonon line position, width and relative amplitude with susceptibilities of 0.0126(4) nm/K, 0.062(2) nm/K and $-0.037(2)$ K$^{-1}$, respectively. Si,P-doped nanodiamonds show significantly smaller (up to 35 % for the width) susceptibilities and prove control of SiV properties with additional chemical doping. It is argued that a significant contribution to the heating of the nanodiamonds induced by laser light can be intrinsic due to a high concentration and low luminescence quantum yield of SiV centers., Comment: 3 figure, 4 pages

Striving for nanometer-sized solid-state single-photon sources, we investigate atom-like quantum emitters based on single germanium vacancy (GeV) centers isolated in crystalline nanodiamonds (NDs). Cryogenic characterization indicated symmetry-protected and bright (> 10^6 counts/s with off-resonance excitation) zero-phonon optical transitions with up to 6-fold enhancement in energy splitting of their ground states as compared to that found for GeV centers in bulk diamonds (i.e., up to 870 GHz in highly strained NDs vs 150 GHz in bulk). Utilizing lithographic alignment techniques, we demonstrate an integrated nanophotonic platform for deterministic interfacing plasmonic waveguides with isolated GeV centers in NDs that enables 10-fold enhancement of single-photon decay rates along with the emission direction control by judiciously designing and positioning a Bragg reflector. This approach allows one to realize the unidirectional emission from single-photon dipolar sources introducing a novel method that is alternative to the propagation-direction-dependent techniques based on chiral interactions or topological protection. The developed plasmon-based nanophotonic platform opens thereby new perspectives for quantum nanophotonics in general and for realizing entanglement between single photons and spin qubits, in particular.

Nanoscale thermometry is paramount to study primary processes of heat transfer in solids and is a subject of hot debate in cell biology. Here we report ultrafast temperature sensing using all-optical thermometry exploiting synthetic nanodiamonds with silicon-vacancy (SiV) centres embedded at a high concentration. Using multi-parametric analysis of photoluminescence (PL) of these centres, we have achieved an intrinsic noise floor of about 10 mK Hz$^{-1/2}$, which is a thousand-fold increase in the readout speed in comparison to the current record values demonstrated with all-optical methods of comparable spatial-resolution and precision. Our thermometers are smaller than 250-nm across but can detect a 0.4$^\circ$C change of temperature in a measurement taking only 0.001 second. The exceptional sensitivity and simplicity of these thermometers enable a wide range of applications such as temperature monitoring and mapping within intracellular regions and in state-of-the-art solid-state electronic nanodevices.

We report on the isolation of single SiV$^-$ centers in nanodiamonds. We observe the fine-structure of single SiV$^-$ center with improved inhomogeneous ensemble linewidth below the excited state splitting, stable optical transitions, good polarization contrast and excellent spectral stability under resonant excitation. Based on our experimental results we elaborate an analytical strain model where we extract the ratio between strain coefficients of excited and ground states as well the intrinsic zero-strain spin-orbit splittings. The observed strain values are as low as best values in low-strain bulk diamond. We achieve our results by means of H-plasma treatment of the diamond surface and in combination with resonant and off-resonant excitation. Our work paves the way for indistinguishable, single photon emission. Furthermore, we demonstrate controlled nano-manipulation via atomic force microscope cantilever of 1D- and 2D-alignments with a so-far unreached accuracy of about 10nm, as well as new tools including dipole rotation and cluster decomposition. Combined, our results show the potential to utilize SiV$^-$ centers in nanodiamonds for the controlled interfacing via optical coupling of individually well-isolated atoms for bottom-up assemblies of complex quantum systems.

Monolithic integration of quantum emitters in nanoscale plasmonic circuitry requires low-loss plasmonic configurations capable of confining light well below the diffraction limit. We demonstrate on-chip remote excitation of nanodiamond-embedded single quantum emitters by plasmonic modes of dielectric ridges atop colloidal silver crystals. The nanodiamonds are produced to incorporate single germanium-vacancy (GeV) centers, providing bright, spectrally narrow and stable single-photon sources suitable for highly integrated circuits. Using electron-beam lithography with hydrogen silsesquioxane (HSQ) resist, dielectric-loaded surface plasmon polariton waveguides (DLSPPWs) are fabricated on single crystalline silver plates so as to contain those of spin-casted nanodiamonds that are found to feature appropriate single GeV centers. The low-loss plasmonic configuration enabled the 532 nm pump laser light to propagate on-chip in the DLSPPW and reach to an embedded nanodiamond where a single GeV center is incorporated. The remote GeV emitter is thereby excited and coupled to spatially confined DLSPPW modes with an outstanding figure-of-merit of 180 due to a ~6-fold Purcell enhancement, ~56% coupling efficiency and ~33 {\mu}m transmission length, revealing the potential of our approach for on-chip realization of nanoscale functional quantum devices.

Nanodiamonds containing color centers open up many applications in quantum information processing, metrology, and quantum sensing. In particular, silicon vacancy (SiV) centers are prominent candidates as quantum emitters due to their beneficial optical qualities. Here we characterize nanodiamonds produced by a high-pressure high-temperature method without catalyst metals, focusing on two samples with clear SiV signatures. Different growth temperatures and relative content of silicon in the initial compound between the samples altered their nanodiamond size distributions and abundance of SiV centers. Our results show that nanodiamond growth can be controlled and optimized for different applications.

Silicon vacancy (SiV) centers in diamonds have emerged as a very promising candidate for quantum emitter due to their narrow emission line resulting in their indistinguishability. While many different quantum emitters have already been used for excitation of various propagating plasmonic modes, the corresponding exploitation of SiV centers remained so far uncharted territory. Here, we report on excitation of surface plasmon modes supported by silver nanowires using SiV centers in nanodiamonds. The coupling of SiV center fluorescence to surface plasmons is observed, when a nanodiamond situated close to a nanowire is illuminated by the pump, as radiated emission from the distal nanowire end. The effect of coupling is also seen as a change in the SiV center lifetime. Finally, we discuss possible avenues for strengthening the SiV center coupling to surface plasmon modes.

Nanodiamonds (NDs) hosting optically active defects are an important technical material for applications in quantum sensing, biological imaging, and quantum optics. The negatively charged silicon vacancy (SiV) defect is known to fluoresce in molecular sized NDs (1 to 6 nm) and its spectral properties depend on the quality of the surrounding host lattice. This defect is therefore a good probe to investigate the material properties of small NDs. Here we report unprecedented narrow optical transitions for SiV colour centers hosted in nanodiamonds produced using a novel high-pressure high-temperature (HPHT) technique. The SiV zero-phonon lines were measured to have an inhomogeneous distribution of 1.05 nm at 5 K across a sample of numerous NDs. Individual spectral lines as narrow as 354 MHz were measured for SiV centres in nanodiamonds smaller than 200 nm, which is four times narrower than the best SiV line previously reported for nanodiamonds. Correcting for apparent spectral diffusion yielded a homogeneous linewith of about 200 MHz, which is close to the width limit imposed by the radiative lifetime. These results demonstrate that the direct HPHT synthesis technique is capable of producing nanodiamonds with high crystal lattice quality, which are therefore a valuable technical material.