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Spin relaxation of electrons in materials involve both reversible dephasing and irreversible decoherence processes. Their interplay leads to a complex dependence of spin relaxation times on the direction and magnitude of magnetic fields, relevant for spintronics and quantum information applications. Here, we use real-time first-principles density matrix dynamics simulations to directly simulate Hahn echo measurements, disentangle dephasing from decoherence, and predict T1, T2 and T2* spin lifetimes. We show that g-factor fluctuations lead to non-trivial magnetic field dependence of each of these lifetimes in inversion-symmetric crystals of CsPbBr3 and silicon, even when only intrinsic spin-phonon scattering is present. Most importantly, fluctuations in the off-diagonal components of the g-tensor lead to a strong magnetic field dependence of even the T1 lifetime in silicon. Our calculations elucidate the detailed role of anisotropic g-factors in determining the spin dynamics even in simple, low spin-orbit coupling materials such as silicon.

In recent years, a new kind of accelerated hardware has gained popularity in the Artificial Intelligence (AI) and Machine Learning (ML) communities which enables extremely high-performance tensor contractions in reduced precision for deep neural network calculations. In this article, we exploit Nvidia Tensor cores, a prototypical example of such AI/ML hardware, to develop a mixed precision approach for computing a dense matrix factorization of the inverse overlap matrix in electronic structure theory, $S^{-1}$. This factorization of $S^{-1}$, written as $ZZ^T=S^{-1}$, is used to transform the general matrix eigenvalue problem into a standard matrix eigenvalue problem. Here we present a mixed precision iterative refinement algorithm where $Z$ is given recursively using matrix-matrix multiplications and can be computed with high performance on Tensor cores. To understand the performance and accuracy of Tensor cores, comparisons are made to GPU-only implementations in single and double precision. Additionally, we propose a non-parametric stopping criteria which is robust in the face of lower precision floating point operations. The algorithm is particularly useful when we have a good initial guess to $Z$, for example, from previous time steps in quantum-mechanical molecular dynamics simulations or from a previous iteration in a geometry optimization., Comment: 12 pages, 4 figures, 1 table and a few algorithms

Extraction of non-equilibrium hot carriers generated by plasmon decay in metallic nanostructures is an increasingly exciting prospect for utilizing plasmonic losses, but the search for optimum plasmonic materials with long-lived carriers is ongoing. Transition metal nitrides are an exciting class of new plasmonic materials with superior thermal and mechanical properties compared to conventional noble metals, but their suitability for plasmonic hot carrier applications remains unknown. Here, we present fully first-principles calculations of the plasmonic response, hot carrier generation and subsequent thermalization of all group IV, V and VI transition metal nitrides, fully accounting for direct and phonon-assisted transitions as well as electron-electron and electron-phonon scattering. We find the largest frequency ranges for plasmonic response in ZrN, HfN and WN, between those of gold and silver, while we predict strongest absorption in the visible spectrum for the VN, NbN and TaN. Hot carrier generation is dominated by direct transitions for most of the relevant energy range in all these nitrides, while phonon-assisted processes dominate only below 1 eV plasmon energies primarily for the group IV nitrides. Finally, we predict the maximum hot carrier lifetimes to be around 10 fs for group IV and VI nitrides, a factor of 3 - 4 smaller than noble metals, due to strong electron-phonon scattering. However, we find longer carrier lifetimes for group V nitrides, comparable to silver for NbN and TaN, while exceeding 100 fs (twice that of silver) for VN, making them promising candidates for efficient hot carrier extraction., Comment: 9 pages, 7 figures, 2 tables. Supplemental information in source archive (SI.pdf)