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Reversible, nonvolatile, and pronounced refractive index modulation is an unprecedented combination of properties enabled by chalcogenide phase-change materials (PCMs). This combination of properties makes PCMs a fast-growing platform for active, low-energy nanophotonics, including tunability to otherwise passive thin-film optical coatings. Here, we integrate the PCM Sb2Se3 into a novel four-layer thin-film optical coating that exploits photonic Fano resonances to achieve tunable structural colors in both reflection and transmission. We show, contrary to traditional coatings, that Fano-resonant optical coatings (FROCs) allow for achieving transmissive and reflective structures with narrowband peaks at the same resonant wavelength. Moreover, we demonstrate asymmetric optical response in reflection, where Fano resonance and narrow-band filtering are observed depending upon the light incidence side. Finally, we use a multi-objective inverse design via machine learning (ML) to provide a wide range of solution sets with optimized structures while providing information on the performance limitations of the PCM-based FROCs. Adding tunability to the newly introduced Fano-resonant optical coatings opens various applications in spectral and beam splitting, and simultaneous reflective and transmissive displays, diffractive objects, and holograms., Comment: 16 pages, 12 figures

Optical phase-change materials are highly promising for emerging applications such as tunable metasurfaces, reconfigurable photonic circuits, and non-von Neumann computing. However, these materials typically require both high melting temperatures and fast quenching rates to reversibly switch between their crystalline and amorphous phases, a significant challenge for large-scale integration. Here, we present an experimental technique which leverages the thermo-optic effect in GST to enable both spatial and temporal thermal measurements of two common electro-thermal microheater designs currently used by the phase-change community. Our approach shows excellent agreement between experimental results and numerical simulations and provides a non-invasive method for rapid characterization of electrically programmable phase-change devices.

Energy-efficient programmable photonic integrated circuits (PICs) are the cornerstone of on-chip classical and quantum optical technologies. Optical phase shifters constitute the fundamental building blocks which enable these programmable PICs. Thus far, carrier modulation and thermo-optical effect are the chosen phenomena for ultrafast and low-loss phase shifters, respectively; however, the state and information they carry are lost once the power is turned off-they are volatile. The volatility not only compromises energy efficiency due to their demand for constant power supply, but also precludes them from emerging applications such as in-memory computing. To circumvent this limitation, we introduce a novel phase shifting mechanism that exploits the nonvolatile refractive index modulation upon structural phase transition of Sb$_{2}$Se$_{3}$, a bi-stable transparent phase change material. A zero-static power and electrically-driven phase shifter was realized on a foundry-processed silicon-on-insulator platform, featuring record phase modulation up to 0.09 $\pi$/$\mu$m and a low insertion loss of 0.3 dB/$\pi$, which can be further improved upon streamlined design. We also pioneered a one-step partial amorphization scheme to enhance the speed and energy efficiency of PCM devices. A diverse cohort of programmable photonic devices were demonstrated based on the ultra-compact PCM phase shifter., Comment: 15 pages with 6 figures and 1 table

Active metasurfaces promise reconfigurable optics with drastically improved compactness, ruggedness, manufacturability, and functionality compared to their traditional bulk counterparts. Optical phase change materials (O-PCMs) offer an appealing material solution for active metasurface devices with their large index contrast and nonvolatile switching characteristics. Here we report what we believe to be the first electrically reconfigurable nonvolatile metasurfaces based on O-PCMs. The O-PCM alloy used in the devices, Ge2Sb2Se4Te1 (GSST), uniquely combines giant non-volatile index modulation capability, broadband low optical loss, and a large reversible switching volume, enabling significantly enhanced light-matter interactions within the active O-PCM medium. Capitalizing on these favorable attributes, we demonstrated continuously tunable active metasurfaces with record half-octave spectral tuning range and large optical contrast of over 400%. We further prototyped a polarization-insensitive phase-gradient metasurface to realize dynamic optical beam steering., Comment: 12 pages, 5 figures

Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real-world technology. Current active devices available in foundries, however, use volatile methods to modulate light, requiring a constant supply of power and significant form factors. Essential aspects to overcoming these issues are the development of nonvolatile optical reconfiguration techniques which are compatible with on-chip integration with different photonic platforms and do not disrupt their optical performances. In this paper, a solution is demonstrated using an optoelectronic framework for nonvolatile tunable photonics that employs undoped-graphene microheaters to thermally and reversibly switch the optical phase-change material Ge$_2$Sb$_2$Se$_4$Te$_1$ (GSST). An in-situ Raman spectroscopy method is utilized to demonstrate, in real-time, reversible switching between four different levels of crystallinity. Moreover, a 3D computational model is developed to precisely interpret the switching characteristics, and to quantify the impact of current saturation on power dissipation, thermal diffusion, and switching speed. This model is used to inform the design of nonvolatile active photonic devices; namely, broadband Si$_3$N$_4$ integrated photonic circuits with small form-factor modulators and reconfigurable metasurfaces displaying 2$\pi$ phase coverage through neural-network-designed GSST meta-atoms. This framework will enable scalable, low-loss nonvolatile applications across a diverse range of photonics platforms., Comment: 22 pages, 5 Figures, 2 tables

Active metasurfaces, whose optical properties can be modulated post-fabrication, have emerged as an intensively explored field in recent years. The efforts to date, however, still face major performance limitations in tuning range, optical quality, and efficiency especially for non mechanical actuation mechanisms. In this paper, we introduce an active metasurface platform combining phase tuning covering the full 2$\pi$ range and diffraction-limited performance using an all-dielectric, low-loss architecture based on optical phase change materials (O-PCMs). We present a generic design principle enabling switching of metasurfaces between two arbitrary phase profiles and propose a new figure-of-merit (FOM) tailored for active meta-optics. We implement the approach to realize a high-performance varifocal metalens operating at 5.2 $\mu$m wavelength. The metalens is constructed using Ge2Sb2Se4Te1 (GSST), an O-PCM with a large refractive index contrast ($\Delta$ n > 1) and unique broadband low-loss characteristics in both amorphous and crystalline states. The reconfigurable metalens features focusing efficiencies above 20% at both states for linearly polarized light and a record large switching contrast ratio of 29.5 dB. We further validated aberration-free imaging using the metalens at both optical states, which represents the first experimental demonstration of a non-mechanical active metalens with diffraction-limited performance.

Optical phase change materials (O-PCMs), a unique group of materials featuring drastic optical property contrast upon solid-state phase transition, have found widespread adoption in photonic switches and routers, reconfigurable meta-optics, reflective display, and optical neuromorphic computers. Current phase change materials, such as Ge-Sb-Te (GST), exhibit large contrast of both refractive index (delta n) and optical loss (delta k), simultaneously. The coupling of both optical properties fundamentally limits the function and performance of many potential applications. In this article, we introduce a new class of O-PCMs, Ge-Sb-Se-Te (GSST) which breaks this traditional coupling, as demonstrated with an optical figure of merit improvement of more than two orders of magnitude. The first-principle computationally optimized alloy, Ge2Sb2Se4Te1, combines broadband low optical loss (1-18.5 micron), large optical contrast (delta n = 2.0), and significantly improved glass forming ability, enabling an entirely new field of infrared and thermal photonic devices. We further leverage the material to demonstrate nonvolatile integrated optical switches with record low loss and large contrast ratio, as well as an electrically addressed, microsecond switched pixel level spatial light modulator, thereby validating its promise as a platform material for scalable nonvolatile photonics., Comment: 16 pages, 6 figures

Collocated data processing and storage are the norm in biological systems. Indeed, the von Neumann computing architecture, that physically and temporally separates processing and memory, was born more of pragmatism based on available technology. As our ability to create better hardware improves, new computational paradigms are being explored. Integrated photonic circuits are regarded as an attractive solution for on-chip computing using only light, leveraging the increased speed and bandwidth potential of working in the optical domain, and importantly, removing the need for time and energy sapping electro-optical conversions. Here we show that we can combine the emerging area of integrated optics with collocated data storage and processing to enable all-photonic in-memory computations. By employing non-volatile photonic elements based on the phase-change material, Ge2Sb2Te5, we are able to achieve direct scalar multiplication on single devices. Featuring a novel single-shot Write/Erase and a drift-free process, such elements can multiply two scalar numbers by mapping their values to the energy of an input pulse and to the transmittance of the device, codified in the crystallographic state of the element. The output pulse, carrying the information of the light-matter interaction, is the result of the computation. Our all-optical approach is novel, easy to fabricate and operate, and sets the stage for development of entirely photonic computers.