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We demonstrate active embedded microfluidic cooling in $\beta$-Ga$_2$O$_3$. We employ a cost-effective infra-red laser etch setup to achieve controlled etching of micro-channels in 500 um thick $\beta$-Ga$_2$O$_3$ substrate. The micro-channels are about 210 um deep and 340 um wide. Resistive heating is used as proof-of-concept. At a water flow rate of 50 ml/min, a 50% reduction in surface temperature from ~140$^\circ$C to ~72$^\circ$C is achieved for 3.5 W of input power. The experimental observations are backed by thermal simulation. This work is expected to lead to a new paradigm in thermal management in emerging $\beta$-Ga$_2$O$_3$ devices., Comment: 10 pages, 5 figures

In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the gate edge towards the drain. The breakdown of such devices with meandering gate-drain access region (M-HEMT) are found to be 62% more compared to that of conventional HEMT while the ON resistance suffers by 76%, leading to an overall improvement in the BFOM for by 28%. 3D-TCAD simulations show that the decrease in the peak electric field at the gate edge was responsible for increased breakdown voltage.

We report on the demonstration and investigation of Ta2O5 as high-\k{appa} dielectric for InAlN/GaN-MOS HEMT-on-Si. Ta2O5 of thickness 24 nm and dielectric constant ~ 30 was sputter deposited on InAlN/GaN HEMT and was investigated for different post deposition anneal conditions (PDA). The gate leakage was 16nA/mm at -15 V which was ~ 5 orders of magnitude lower compared to reference HEMT. The 2-dimensional electron gas (2DEG) density was found to vary with annealing temperature suggesting the presence of net charge at the Ta2O5/InAlN interface. Dispersion in the capacitance-voltage (C-V) characteristics was used to estimate the frequency-dependent interface charge while energy band diagrams under flat band conditions were investigated to estimate fixed charge. The optimum anneal condition was found to be 500{\deg} C which has resulted into a flat band voltage spread (VFB) of 0.4 V and interface fix charge (Qf) of 3.98x10^13 cm-2. XPS (X-ray photoelectron spectroscopy) spectra of as deposited and annealed Ta2O5 film were analyzed for Ta and O compositions in the film. The sample annealed at 500{\deg} C has shown Ta:O ratio of 0.41.XRD (X-ray diffraction) analysis was done to check the evolution of poly-crystallization of the Ta2O5 film at higher annealing temperatures.

In this letter, we report on the quantitative estimates of various metrics of performance for \b{eta}-Ga2O3 based High Electron Mobility Transistor (HEMT) for radio frequency (RF) and power applications and compare them with III-nitride devices. It is found that despite a lower cut-off frequency, \b{eta}- Ga2O3 HEMT is likely to provide higher RF output power compared to GaN-HEMT in the low-frequency regime although a poor thermal conductivity will impose limitations in heat dissipation. On the other hand, a much lower electron mobility will limit the DC switching performance in terms of efficiency and loss although their blocking voltage can be much higher than in GaN.

We demonstrate self-powered \b{eta}-Ga2O3 deep-UV metal-semiconductor-metal (MSM) photodetectors (PD) with 0.5% external quantum efficiency (EQE) at zero bias. 150 nm thick (-201)-oriented epitaxial \b{eta}-Ga2O3-films were grown on c-plane sapphire using plasma-assisted MBE. Ni/Au and Ti/Au metal stacks were deposited as contacts to achieve asymmetric Schottky barrier heights in interdigitated finger architecture for realizing self-powered photodetectors. Current-voltage characteristics (photo and dark), time-dependent photocurrent and spectral response were studied and compared with conventional symmetric MSM PD with Ni/Au as the Schottky metal contact, fabricated on the same sample. The asymmetric, self-powered devices exhibited solar-blind nature and low dark current < 10 nA at 15 V with high photo-to-dark current ratio of ~ 103. The dark and photocurrents were asymmetric with respect to the applied bias and the responsivity in the forward bias was characterized by gain. The detectors (asymmetric-MSM) were found to exhibit a responsivity of 1.4 mA/W at 255 nm under zero-bias condition (corresponding to an EQE ~ 0.5 %), with a UV-to-Visible rejection ratio ~ 102 and ~105 at 0 V and 5 V respectively., Comment: 5 figures, 1 table

We demonstrate an InAlN/GaN-on-Si HEMT based UV detector with photo to dark current ratio > 107. Ti/Al/Ni/Au metal stack was evaporated and rapid thermal annealed for Ohmic contacts to the 2D electron gas (2DEG) at the InAlN/GaN interface while the channel + barrier was recess etched to a depth of 20 nm to pinch-off the 2DEG between Source-Drain pads. Spectral responsivity (SR) of 34 A/W at 367 nm was measured at 5 V in conjunction with very high photo to dark current ratio of > 10^7. The photo to dark current ratio at a fixed bias was found to be decreasing with increase in recess length of the PD. The fabricated devices were found to exhibit a UV-to-visible rejection ratio of >103 with a low dark current < 32 pA at 5 V. Transient measurements showed rise and fall times in the range of 3-4 ms. The gain mechanism was investigated and carrier lifetimes were estimated which matched well with those reported elsewhere., Comment: 12 pages