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During the past year, Spectroscopy examined trends in spectroscopic methods and applications, including advances in X-ray fluorescence (XRF) methods, laser-induced breakdown spectroscopy (LIBS), near-infrared (NIR) spectroscopy, quantum cascade lasers (QCLs), [...]

Amptek's Mini-X2 miniature X-ray tube system is designed to simplify the X-ray fluorescence (XRF) process by providing a grounded anode, USB control of current and voltage, a collimator mount, and [...]

Amptek's Mini-X2 miniature X-ray tube system is designed to simplify the X-ray fluorescence (XRF) process by providing a grounded anode, USB control of current and voltage, a collimator mount, and [...]

Transmission electron microscopy, electron energy loss spectroscopy and x-ray photoelectron spectroscopy (XPS) are used for examining the crystalline and amorphous nanoparticles of silicon in thin silica layers. The studies have shown that the chemical shift in the nanocrystals is determined by initial state and that the electron screening of silicon core holes in nanocrystals dispersed in Si[O.sub.2] is inferior to that in pure bulk Si.

The [Cs.sub.2x][Mn.sub.1-x]P[S.sub.3] compound is prepared by the cesium ion-exchange intercalation reaction on MnP[S.sub.3] and is characterized by various spectroscopic methods. The studies have shown that the [Cs.sup.+] intercalation process in MnP[S.sub.3] is complete and has led to the creation of intercalated vacancies.

The effect of annealing on the local coordination of Fe in a series of vitrified industrial wastes is analyzed by using x-ray fluorescence mapping and x-ray absorption fine structure (XAFS) spectroscopies. The depletion of Fe from the glass, which has led to the formation of Fe-rich crystalline regions, has resulted in the weakening of the vitreous matrix in which Pb is entrapped.

X-ray photoelectron spectroscopy is used to study the annealing process of UV-ozone oxide on GaAs for the formation of gold nanoparticle. The UV-ozone oxide layer is found to contain [As.sub.2][O.sub.3] as dominant oxide, while the oxide layer becomes rich in [Ga.sub.2][O.sub.3] when annealed at 500 degree Celsius for 300 s in dry nitrogen environment.

The role of proximity caps during the annealing of UV-ozone oxidized GaAs under different capping conditions is studied using x-ray photoelectron spectroscopy. The surface deterioration of GaAs is found to be due to pit formation and the pits contain mainly elemental As and gallium oxide with As at the pit oxide interface.

Company Description HHS-US manufactures and integrates world-class silicon drift x-ray detectors (SDDs) for synchrotron applications as well as for use in analytical instruments. Also supports a network of distributors and [...]