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Evaluation of the conductance oscillations in a quantum box indicates that controllable impurity in quantum box induces a quantum interference effect that activates well defined conductance oscillations. Modifications in the impurity potential give rise to electronic oscillations from destructive and constructive interference processes. The oscillations depend on impurity size while strong oscillations also arise in the presence of realistic structural parameters.

A new no-barrier quantum interferometer design reveals high quantum interference in ballistic areas where the structure examined is smaller than the elastic mean free path and the phase coherence length. Recursive Green's function method calculations validate the production of strong quantum interference conductance oscillation by varying the width of one branch. These conductance oscillations are useful for device length and liquid-helium temperatures.

A quantum-mechanical free electron model is used for analyzing a spin polarized transport and current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR). The study has confirmed that modification of the free electron model by quantum-mechanical methods is applied for calculating spin polarized transport and CPP-GMR in a specific material system.

The crossover between the diffusive and quasi-ballistic regimes of transport in submicron semiconductor channels is analyzed. The results have highlighted the microscopic signatures of quasi-ballistic transport as well as the crossover between the diffusive and quasi-ballistic regimes of transport.

We report on a study of quasiballistic transport in deep submicron, inhomogeneous semiconductor structures, focusing on the analysis of signatures found in the full nonequilibrium electron distribution. We perform self-consistent numerical calculations of the Poisson-Boltzmann equations for a model n+-n--n+ GaAs structure and realistic, energy-dependent scattering. We show that, in general, the electron distribution displays significant, temperature dependent broadening and pronounced structure in the high-velocity tail of the distribution. The observed characteristics have a strong spatial dependence, related to the energy dependence of the scattering, and the large inhomogeneous electric field variations in these systems. We show that in this quasiballistic regime, the high-velocity tail structure is due to pure ballistic transport, whereas the strong broadening is due to electron scattering within the channel, and at the source(drain) interfaces. [ABSTRACT FROM AUTHOR]

Studies the simulation of hyperthermal deposition of Si and C on SiC surfaces. Sticking probabilities of adatoms; Efficient transfer of adatom energy to the substrate; Attractive forces experienced by the impinging adatom over the entire surface.