1. Anomalous Hall effect in highly Mn-Doped silicon films.
- Author
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Nikolaev, S. N., Aronzon, B. A., Ryl'kov, V. V., Tugushev, V. V., Demidov, E. S., Levchuk, S. A., Lesnikov, V. P., Podol'skii, V. V., and Gareev, R. R.
- Subjects
HALL effect ,ELECTRIC currents ,SILICON ,MAGNETIC fields ,FIELD theory (Physics) ,PHYSICS - Abstract
The transport and magnetic properties of Mn
x Si1 − x films with a high ( x ≈ 0.35) content of Mn produced by laser deposition at growth temperatures of 300–350°C have been studied in a temperature range of 5–300 K in magnetic fields of up to 2.5 T. The films exhibit a hole-type metallic conductivity and a relatively weak change of magnetization in a temperature range of 50–200 K. An anomalous Hall effect with an essentially hysteretic behavior from 50 K up to ≈230 K has been discovered. The properties of the films are explained by the two-phase model, in which ferromagnetic clusters containing interstitial Mn ions with a localized magnetic moment are embedded in the matrix of a weak band MnSi2 − x ( x ≈ 0.3) type ferromagnet with delocalized spin density. [ABSTRACT FROM AUTHOR]- Published
- 2009
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