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A dedicated X-ray lithography system has been developed on beam line III-4 at the Stanford Synchrotron Radiation Laboratory (SSRL). The research program at SSRL includes studies of the spectral sensitivity of X-ray resists, mask characterization, and the applications of novel X-ray optics. The facilities available for this work and recent results in these areas will be described.

A model for the introduction of noise into computer simulations of FEL pulse propagationJohn M. J. Madey, Stephen V. Benson, Todd I. Smith and Renato RedaelliHigh Energy Physics Laboratory, Stanford University, Stanford, California 94305AbstractWe have developed a model for computer simulation of shot noise and quantum field fluctu-ations in order to study the effect of noise on the startup and saturated operation of afree electron laser. The model is described and some results relevant to the Stanford3 pm laser are presented.IntroductionIt has long been known that noise has a fundamental role to play in the startup of freeelectron lasers. This problem has gained more attention recently with the planned operationof several FEL's using pulsed electron sources whose macropulse duration is only a few micro-seconds. These devices must turn on in as short a time as possible, so it is important thatthe startup be well understood. The evidence for anomalously long turn -on times in theStanford 3 pm FEL1 is an indication of possible problems in startup. The problem of theeffects of noise on laser devices in which pulse effects are important is a worthy problemin itself. Some work in this regard has already been done.

Wide bandwidth, high throughput monochromators for synchrotron radiation applications have been developed using Layered Synthetic Microstructures (LSM's). A double crystal LSM monochromator has been demonstrated with an energy resolution of 3% at 1.5 keV and a tuning range of 0.8 to 3.5 keV. In addition, techniques for extending the tuning range to lower energies as well as studies of substrate perfection using soft X-ray topography will be described.

A dedicated X-ray lithography system has been developed on Beam Line III-4 at the Stanford Synchrotron Radiation Laboratory (SSRL). The research program at SSRL includes studies of the spectral sensitivity of X-ray resists, mask characterization, and the applications of novel X-ray optics. The facilities available for this work and recent results in these areas will be described.

A study of Fresnel diffraction effects is presented for structures of interest for X-Ray Microlithography. This analysis uses the full optical constants of the mask absorber pattern. Therefore, our calculations take into account the fact that the photons experience a phase shift as they go through the mask's absorbing layer in addition to simple absorption. Results are presented which show the consequences of adding the phase effects to the Fresnel analysis. These results show that phase effects cannot be disregarded in modeling Fresnel intensity profiles on resists.