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A real-time grazing incidence small-angle x-ray scattering and x-ray fluorescence as a function of substrate temperature and Ga flux was employed to study the gallium adsorption and desorption on c-plane sapphire. The results provide insight into the surface morphology evolution.

The in situ synchrotron x-ray scattering with high temporal resolution is used to probe the surface and interface roughness evolution in sputtered W[Si.sub.2] and Si single layers and W[Si.sub.2]/Si multilayers. The results have shown that the W[Si.sub.2]/Si multilayer surface alternately roughens and smoothes during deposition, while the Si layer roughness monotonically, the W[Si.sub.2] layer is found to smooth out when deposited on an initially rough surface.

The adsorption and desorption of Ga on c-plane sapphire and Ga-polar GaN surfaces is studied by employing real-time grazing-incidence small-angle x-ray scattering. Formation of self-organized liquid Ga nanodroplets is observed on sapphire during Ga exposure from an effusion cell at high flux.

The texture of CoSi2 films on Si(001) substrates is examined using synchrotron based high-resolution pole figure analysis. It is found that axiotaxy, a recognized type of texture, which was observed in NiSi thin films on Si(001), is also occurring in CoSi2 layers.