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A study was conducted to analyze the dependencies of MeV He single-ion-induced interface traps on oxide thickness and oxide electric fields during irradiation. Results indicated that the generation rate of interface traps per ion for thicker oxide metal-oxide-semiconductor field-effect transistors was greater than that for thinner oxide metal oxide semiconductor field effect transistors during a positive electric field.

A single-ion microprobe technique was employed in measuring the high energy single ion irradiation-induced charges at a p-n junction diode and in evaluating the dependence of the charges on the ion incident position. The effects of funneling in the charge collection process were found to cause the charge collection profile dependence of the ion incidence inside the junction area. Results also show that collection efficiency differences of diffused charges influence the profile of the ion incidence outside the junction area.

A liquid-metal-ion source low-energy ion gun/high-temperature ultrahigh vacuum scanning tunneling microscope combined system (LMIS-IG/STM) has been developed in order to investigate the ion beam modification process in situ based on our previous ion gun/STM combined system (IG/STM). Various kinds of metal ions can be irradiated with low acceleration energy of 0.01–5 keV during STM observation at 400–600 °C. As an example, real-time STM observation of Si(111)7×7 surface irradiated with Si2+ ions is demonstrated. The STM results have shown that the surface defects generated by Si2+ ion irradiation exhibit similar behavior of surface defects induced by Ar+ irradiation with IG/STM. [ABSTRACT FROM AUTHOR]