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Non-Gaussian states of light, which are essential in fault-tolerant and universal optical quantum computation, are typically generated by a heralding scheme using photon detectors. Recently, it has been theoretically shown that the large timing jitter of the photon detectors deteriorates the purity of the generated non-Gaussian states [T. Sonoyama et al., Phys. Rev. A 105, 043714 (2022)2469-992610.1103/PhysRevA.105.043714]. Here, we circumvent this problem by time-gated photon detection and generate non-Gaussian states with Wigner negativity using continuous-wave light. We use a fast optical switch for time gating to effectively improve the timing jitter of a photon-number-resolving detector based on a transition edge sensor from 50 ns to 10 ns. As a result, we generate non-Gaussian states with Wigner negativity of −0.011±0.004 (ℏ=1), which cannot be observed without the time-gated photon detection method. These results confirm the effect of the timing jitter on non-Gaussian state generation experimentally for the first time. The proposed time-gated photon detection method would be useful for high-purity non-Gaussian state preparation in optical quantum information processing.

The effect of low growth rate deposition (LGD) of BaSi2 on the film quality and performance of silicon heterojunction solar cells was investigated. The total thickness of the BaSi2 layer decreased with increasing LGD duration (tLGD). Analysis using Raman spectroscopy indicated that an amorphous Si (a-Si) phase existed on the surface of the BaSi2 layer. The a-Si on the surface was converted into BaSi2 by post-annealing owing to the diffusion of Ba and Si atoms. X-ray diffraction analysis revealed that LGD improved the rate of a-axis orientation and crystallinity. Post-annealing was also observed to have significantly improved these structural properties. Furthermore, the solar cell performance was observed to be strongly dependent on tLGD, and the highest conversion efficiency of 10.62% was achieved by the p-BaSi2/n-c-Si heterojunction solar cells at a tLGD of 6 min. The improved structure and solar cell properties are attributed to improved atom rearrangement during LGD.

A vanadium dioxide VO2 film shows metal-insulator transition (MIT) induced by changing environmental temperature. We report the temperature dependence of electromotive force properties generated in VO2/Ni80Fe20 bilayer junctions under the ferromagnetic resonance (FMR) of the Ni80Fe20 layer. An electromotive force generated in a VO2/Ni80Fe20 bilayer junction under the FMR showed a small change across the MIT temperature of the VO2 film, while the VO2 film resistance drastically changed. This behavior was not only explained with the temperature dependence of the electromotive force property generated in the Ni80Fe20 film itself under the FMR, but also with the generated electromotive forces due to the inverse spin-Hall effect (ISHE) in the VO2 film under the FMR of the Ni80Fe20 film. That is, we successfully demonstrated the spin injection from a Ni80Fe20 film into a VO2 film across the MIT temperature of the VO2 film.

The principle of the distributed magnetic sensor by magneto-impedance effect with time domain reflectometry was demonstrated, and the position and strength of the magnetic field were detected simultaneously with a magnetic coaxial cable. This paper presents a distributed magnetic sensor using the forward and reverse reflection coefficients S11 and S22 from both ends of a single magnetic coaxial cable. The method using reflection coefficients includes novel features such as: (1) improvement of the signal-noise ratio for equivalent measurement time and (2) cancellation of the time fluctuation by jitter. It is confirmed that the SNR of a reflected wave with a vector network analyzer is improved by 21.3 dB compared to that of an oscilloscope. Furthermore, the attenuation of a signal wave can be compensated by synthesizing the reflected waves from both ends. As a result, the signal wave is less affected by the attenuation along the length of the cable and is improved by 19.0 dB at the position of 180 mm.

An efficient periodic operation to obtain the maximum work from a nonequilibrium initial state in an N–level quantum system is shown. Each cycle consists of a stabilization process followed by an isentropic restoration process. The instantaneous time limit can be taken in the stabilization process from the nonequilibrium initial state to a stable passive state. In the restoration process that preserves the passive state a minimum period is needed to satisfy the uncertainty relation between energy and time. An efficient quantum feedback control in a symmetric two–level quantum system connected to an energy source is proposed.