Search

Molecular dynamics simulations were conducted to determine the feasibility of employing decaborane B10H14 in the development of shallow junctions in Si. Results show that a small amount of H is also implanted in the crystal along with B atoms. Results also indicate that individual molecular collisions cause local swelling as well as small craters, creating a problem for ultrashallow junctions.

A study is conducted to examine the behavior of distributions of arsenic in ultrashallow regime fabricated in silicon by either rapid thermal annealing or laser submelt annealing. The results obtained provide insight into the monoclinic SiAs aggregates as well as various arsenic-vacancy clusters that play a critical role in the deactivation of arsenic.

We report the fabrication of p+/n junctions using Ge+, C+, and B+ co-implantation and a spike anneal. The best junction exhibits a depth of 26 nm, vertical abruptness of 3 nm/decade, and sheet resistance of 520 Ohm/square. The junction location is defined by where the boron concentration drops to 1018 cm-3. These junctions are close to the International Technology Roadmap specifications for the 65 nm technology node and are achieved by careful engineering of amorphization, stresses, and point defects. Advanced simulation of boron diffusion is used to understand and optimize the process window. The simulations show that the optimum process completely suppresses the transient-enhanced diffusion of boron and the formation of boron-interstitial clusters. This increases the boron solubility to 20% above the equilibrium solid-state solubility. [ABSTRACT FROM AUTHOR]