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The effect of thermal treatments in nitrogen-diluted oxygen on the structural characteristics of 2-D arrays of Si nanocrystals (NCs) fabricated by ultralow energy ion implantation in thin silicon dioxide layers is studied. The study reveals that the NC mean size, density, and surface fraction decrease with annealing duration while oxidation rate of the NCs slows down with time and stabilizes after 1 hour of annealing.

The SOI separation caused by implanted oxygen (SIMOX) oxide is characterized by a new method, based on the principle that buried oxide is polarized by the application of bias in the structure's substrate. The rate window technique is used in the monitoring of the induced current transients in the Si film. The relaxation process is thermally activated with the time constants. The high metal concentration of the oxide cause the occurrence of the strange properties of the SIMOX oxide.

The tuning of Injection distance achieved by varying the Si (sub +) ion energy or the oxide thickness during fabrication of Si nanocrystals by ultra low-energy silicon implantation is demonstrated. The influence of ion energy and nominal SiO (sub 2) thickness on the depth position of NSC obtained by low energy ion beam synthesis is explored.

A nonvolatile electrically erasable programmable read-only memory device using gold nanoparticles as charge storage elements deposited at room temperature by chemical processing is demonstrated. The device exhibits significant threshold voltage shifts after application of low-voltage pulses (less than or equal to plus-minus 6 V) to the gate and has nonvolatile retention time characteristics.

We discuss the distribution of size and aerial density of Ge nanocrystals in a metal-oxide-semiconductor (MOS) memory structure fabricated by molecular beam epitaxy combined with rapid thermal processing; the size and aerial density of Ge nanocrystals are controlled by varying the thickness of the deposited Ge layer and the processing time. Variation of tunnel oxide thickness is demonstrated with the extension of the processing time. The effect of processing time and tunnel oxide thickness on the electrical properties of the MOS structures is investigated by high frequency capacitance-voltage measurements. [ABSTRACT FROM AUTHOR]