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The Mn L3,2 x-ray absorption measurements from two dilute magnetic semiconductor systems,(Ga,Mn) As and (Ga,Mn)N are presented. The Mn L3,2 absorption from (Ga,Mn)N is characteristic of more localized Mn(super 2+) ions.

The influence of annealing on the magnetic domain structure of GaMnAs thin films is examined by scanning Hall probe microscopy. Samples receiving very long low temperature annealing in air exhibit large (10-100 mum) domains containing resolvable magnetic disorder.

The development of an x-ray method that used a grazing-incidence diffraction setup for the structural characterization of semiordered GaN nanorods is reported. The application of the method is demonstrated on a series of GaN nanorod samples to determine the mean size of the rods and their angular twist with respect to the crystalline substrate.

The magnetic, electrical and structural properties of [Ga.sub.0.94][Mn.sub.0.06][As.sub.1-y][P.sub.y] layers grown by molecular beam epitaxy on GaAs substrates for y

The study report on the magnetic and electronic properties of (Ga,Mn)As ferromagnetic semiconductor layers containing low concentrations of room temperature magnetic MnAs precipitates is presented.

Spatially resolved polar magneto-optical Kerr effect microscopy measurements are performed on as-grown and annealed [Ga.sub.0.95][Mn.sub.0.05]As thin films with tensile strain. The magnetic domain pattern during reversal is determined by a combination of magnetocrystalline anisotropy and a distribution of pinning sites along the surface ripples that can be altered by annealing.

The measurements of the hole density, ferromagnetic transition temperature Tc and magnetization in a series of as-grown and annealed (Ga,Mn) As samples are presented. On the assumption of an antiferromagnetic coupling between interstital and substitutional Mn, the estimated magnetic moment per Mn is found to be close to the expected 5muB.

The micromagnetic structure of 50 nm Ga(sub 0.91)Mn(sub 0.09)As films is imaged after different low temperature anneals. Samples annealed in vacuum for 10 min display a very random domain structure with small (~3-5 mum) domains. Scanning Hall probe microscopy is used.

The resistivity, temperature, and magnetic field dependence of the anomalous hall effect in a series of metallic Ga(sub 1-x)Mn(sub x)As thin films with x=0.015 to 0.08 is discussed. This allows the determination of hole densities with a relatively small perimental error.