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Deposition of epitaxial oxide semiconductor films using physical vapor deposition methods requires a detailed understanding of the role of energetic particles to control and optimize the film properties. In the present study, Ga 2 O 3 thin films are heteroepitaxially grown on Al 2 O 3 (0001) substrates using oxygen ion beam sputter deposition. The influence of the following relevant process parameters on the properties of the thin films is investigated: substrate temperature, oxygen background pressure, energy of primary ions, ion beam current, and sputtering geometry. The kinetic energy distributions of ions in the film-forming flux are measured using an energy-selective mass spectrometer, and the resulting films are characterized regarding crystalline structure, microstructure, surface roughness, mass density, and growth rate. The energetic impact of film-forming particles on the thin film structure is analyzed, and a noticeable decrease in crystalline quality is observed above the average energy of film-forming Ga + ions around 40 eV for the films grown at a substrate temperature of 725 ° C.

Gallium oxide thin films were grown by ion beam sputter deposition (IBSD) at room temperature on Si substrates with systematically varied process parameters: primary ion energy, primary ion species (O 2 + and Ar +), sputtering geometry (ion incidence angle α and polar emission angle β), and O 2 background pressure. No substrate heating was applied because the goal of these experiments was to investigate the impact of the energetic film-forming species on thin film properties. The films were characterized with regard to film thickness, growth rate, crystallinity, surface roughness, mass density, elemental composition and its depth profiles, and optical properties. All films were found to be amorphous with a surface roughness of less than 1 nm. The stoichiometry of the films improved with an increase in the energy of film-forming species. The mass density and the optical properties, including the index of refraction, are correlated and show a dependency on the kinetic energy of the film-forming species. The ranges of IBSD parameters, which are most promising for further improvement of the film quality, are discussed.

This work focuses on the generation of ferromagnetism at the surface of anatase TiO2 films by low-energy ion irradiation. Controlled Ar+-ion irradiation resulted in a thin (∼10) nm ferromagnetic surface layer. The intrinsic origin and robustness of the magnetic order has been characterized by x-ray magnetic circular dichroism at room temperature revealing that a Ti band is spin-polarized. These results, together with density functional theory calculations, indicate that Ti vacancy-interstitial pairs are responsible for the magnetic order. Superconducting quantum interference device measurements show the existence of a perpendicular magnetic anisotropy and a low remanent magnetization. Magnetic force microscopy reveals that this low remanence is due to oppositely aligned magnetic domains with magnetization vectors normal to the main surface. The weak domain-wall pinning, the magnetic anisotropy, together with the simplicity of the preparation method, open up interesting possibilities for future applications. As an example, single domain patterns of ∼1μm width and several μm length can be easily prepared.

The properties of sputtered and scattered ions are studied for ion beam sputtering of Si by bombardment with noble gas ions. The energy distributions in dependence on ion beam parameters (ion energy: 0.5-1 keV; ion species: Ne, Ar, Xe) and geometrical parameters (ion incidence angle, polar emission angle, and scattering angle) are measured by means of energy-selective mass spectrometry. The presence of anisotropic effects due to direct sputtering and scattering is discussed and correlated with process parameters. The experimental results are compared to calculations based on a simple elastic binary collision model and to simulations using the Monte-Carlo code sdtrimsp. The influence of the contribution of implanted primary ions on energy distributions of sputtered and scattered particles is studied in simulations. It is found that a 10% variation of the target composition leads to detectable but small differences in the energy distributions of scattered ions. Comparison with previously reported data for other ion/target configurations confirms the presence of similar trends and anisotropic effects: The number of high-energy sputtered ions increases with increasing energy of incident ions and decreasing scattering angle. The effect of the ion/target mass ratio is additionally investigated. Small differences are observed with the change of the primary ion species: The closer the mass ratio to unity, the higher the average energy of sputtered ions. The presence of peaks, assigned to different mechanisms of direct scattering, strongly depends on the ion/target mass ratio.