1. Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk.
- Author
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Lebedev, D. V., Kulagina, M. M., Troshkov, S. I., Vlasov, A. S., Davydov, V. Y., Smirnov, A. N., Bogdanov, A. A., Merz, J. L., Kapaldo, J., Gocalinska, A., Juska, G., Moroni, S. T., Pelucchi, E., Barettin, D., Rouvimov, S., and Mintairov, A. M.
- Subjects
QUANTUM dots ,QUANTUM electronics ,INDIUM phosphide ,TRANSMISSION electron microscopy ,PHOTOLUMINESCENCE - Abstract
Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs have the nano-pan-cake shape with the height of ~2 nm, the lateral size of 20-50 nm, and the density of ~5×10
9 cm-2 . Their emission observed at ~940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character, indicating In-As intermixing as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having the diameter of ~3.2 lm and providing a free spectral range of ~27 nm and quality factors up to Q~13 000. Threshold of ~50 W/cm2 and spontaneous emission coupling coefficient of ~0.2 were measured for this MD-QD system. [ABSTRACT FROM AUTHOR]- Published
- 2017
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