Pan, Xin, Mei, Lefu, Zhuang, Yixi, Seto, Takatoshi, Wang, Yuhua, Plyaskin, Mikhail, Xi, Wei, Li, Chao, Guo, Qingfeng, and Liao, Libing
An anti-defect engineering strategy, inspired by photocatalytic and photovoltaic materials, was proposed to develop high-efficiency phosphors in whitlockite families. Significant enhancement of photoluminescence intensity (2.46 times), thermal stability (87.92% at 150 °C), cathodoluminescence intensity (3.34 times), quantum efficiency (IQE sharply up to nearly 100%) were simultaneously realized by constructing a rigid structure and removing vacancy defects. The developed phosphors exhibited promising applications in the fields of warm-white LEDs, plant growth lighting and information security. [Display omitted] • Anti-defect engineering strategy is proposed to develop high-efficiency phosphors. • The internal quantum yield is sharply improved from 38.90% to 99.07%. • The mechanism of improvement is revealed by defect-related characterizations. • DFT calculation shows the positive role of Debye temperature and alkali metal ions. • Promising applications in warm-white LEDs / plant-growth lighting are demonstrated. Lacking an effective strategy to simultaneously address the challenges of quantum efficiency, luminescence intensity and thermal stability has become the key bottleneck for further development and large-scale application of solid-state lighting technology. Herein, inspired by the defect-engineering used in photoelectrocatalytic and photovoltaic materials, we acted in a diametrically opposite way and unprecedentedly proposed an anti-defect engineering strategy to develop high-efficiency phosphors. By constructing a rigid structure and introducing alkali metals M to remove cation vacancy defects, similar to building blocks and jigsaw puzzle, we developed three groups of whitlockite phosphors, namely Ca 3- x Sr x (PO 4) 2 :Ce3+, Ca 3 (PO 4) 2 :Ce3+, M and (Ca 0.5 Sr 0.5) 3 (PO 4) 2 :Ce3+,Na+,Mn2+, and synchronously realized the significant enhancement of photoluminescence intensity (2.46 times), thermal stability (87.92% at 150 °C), cathodoluminescence intensity (3.34 times), quantum yield (from 38.90% to 99.07%). We characterized the defect concentration by positron annihilation technique (PAT), and calculated Debye temperature (ΘD) and simulated the occupation of M according to DFT theory to reveal the improvement mechanism. Some advanced applications were also explored in this work, including warm-white LEDs, plant growth lighting and information security. The anti-defect engineering proposed in this work may contribute to the further development of high-efficiency phosphors for the next-generation smart solid-state lighting technologies. [ABSTRACT FROM AUTHOR]