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Material line defects are one-dimensional structures but the search and proof of electron behaviour consistent with the reduced dimension of such defects has been so far unsuccessful. Here we show using angle resolved photoemission spectroscopy that twin-grain boundaries in the layered semiconductor MoSe 2 exhibit parabolic metallic bands. The one-dimensional nature is evident from a charge density wave transition, whose periodicity is given by k F /π, consistent with scanning tunnelling microscopy and angle resolved photoemission measurements. Most importantly, we provide evidence for spin- and charge-separation, the hallmark of one-dimensional quantum liquids. Our studies show that the spectral line splits into distinctive spinon and holon excitations whose dispersions exactly follow the energy-momentum dependence calculated by a Hubbard model with suitable finite-range interactions. Our results also imply that quantum wires and junctions can be isolated in line defects of other transition metal dichalcogenides, which may enable quantum transport measurements and devices., Competing Interests: The authors declare no competing financial interests.

Phase separation in the nanometer- to micrometer-scale is characteristic for correlated materials, for example, high temperature superconductors, colossal magnetoresistance manganites, Mott insulators, etc. Resolving the electronic structure with spatially-resolved information is critical for revealing the fundamental physics of such inhomogeneous systems yet this is challenging experimentally. Here by using nanometer- and micrometer-spot angle-resolved photoemission spectroscopies (NanoARPES and MicroARPES), we reveal the spatially-resolved electronic structure in the stripe phase of IrTe2. Each separated domain shows two-fold symmetric electronic structure with the mirror axis aligned along 3 equivalent directions, and 6 × 1 replicas are clearly identified. Moreover, such electronic structure inhomogeneity disappears across the stripe phase transition, suggesting that electronic phase with broken symmetry induced by the 6 × 1 modulation is directly related to the stripe phase transition of IrTe2. Our work demonstrates the capability of NanoARPES and MicroARPES in elucidating the fundamental physics of phase-separated materials. Obtaining spatially-resolved electronic structure information at the microscale is key to a complete understanding of phase transitions and domain separation in the solid-state. Here, micro- and nanoscale angle-resolved photoemission spectroscopy reveals the electronic structure of domains in the striped phase of IrTe2. [ABSTRACT FROM AUTHOR]

In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct band gap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show that for different alloy compositions of WS2(1−x)Se2x this trend may be significantly affected by the alloy content and we demonstrate that the sample with the highest Se ratio presents a strongly reduced effect. The highest micro-PL intensity is found for bilayer WS2(1−x)Se2x (x = 0.8) with a decrease of its maximum value by only a factor of 2 when passing from mono-layer to bi-layer. To better understand this factor and explore the layer-dependent band structure evolution of WS2(1−x)Se2x, we performed a nano-angle-resolved photoemission spectroscopy study coupled with first-principles calculations. We find that the high micro-PL value for bilayer WS2(1−x)Se2x (x = 0.8) is due to the overlay of direct and indirect optical transitions. This peculiar high PL intensity in WS2(1−x)Se2x opens the way for spectrally tunable light-emitting devices. [ABSTRACT FROM AUTHOR]

The electronic properties of the coordination complex nickel (II) bis-n-propylxanthate, Ni(CH 3 (CH 2 ) 2 OC(S)S) 2 , were studied by a combination of complementary experimental (both laboratory and synchrotron based techniques) and theoretical methods. Energy differences between HOMOs and LUMOs were determined from UV–visible spectroscopy. The assignment of the transitions were performed with the aid of TD-DFT calculations and based in symmetry considerations. The analysis of the Raman excitation profiles of selected vibrational modes of the complex, taken in resonance with a particular electronic transition, was found to reinforce the electronic assignment. Experimental binding energies of inner and core electrons were determined by PES measurements. Ni K-edge, S K-edge, Ni L-edge, O K-edge and C K-edge XANES spectra were interpreted in terms of the promotion of core electrons to unoccupied electronic levels. An experimental quantitative molecular orbital diagram was constructed using the information extracted from the different techniques. [ABSTRACT FROM AUTHOR]

Transition metal dichalcogenides exhibit spin-orbit split bands at the K-point that become spin polarized for broken crystal inversion symmetry. This enables simultaneous manipulation of valley and spin degrees of freedom. While the inversion symmetry is broken for monolayers, we show here that spin polarization of the MoS2 surface may also be obtained by interfacing it with graphene, which induces a space charge region in the surface of MoS2. Polarization induced symmetry breaking in the potential gradient of the space charge is considered to be responsible for the observed spin polarization. In addition to spin polarization we also observe a renormalization of the valence band maximum (VBM) upon interfacing of MoS2 with graphene. The energy difference between the VBM at the G-point and K-point shifts by ~150 meV between the clean and graphene covered surface. [ABSTRACT FROM AUTHOR]

Angle-resolved photoemission spectroscopy (ARPES) and X-ray photoemission spectroscopy have been used to characterise epitaxially ordered graphene grown on copper foil by low-pressure chemical vapour deposition. A short vacuum anneal to 200 °C allows observation of ordered low energy electron diffraction patterns. High quality Dirac cones are measured in ARPES with the Dirac point at the Fermi level (undoped graphene). Annealing above 300 °C produces n-type doping in the graphene with up to 350 meV shift in Fermi level, and opens a band gap of around 100 meV. [ABSTRACT FROM AUTHOR]

The ability to produce large, continuous and defect free films of graphene is presently a major challenge for multiple applications. Even though the scalability of graphene films is closely associated to a manifest polycrystalline character, only a few numbers of experiments have explored so far the electronic structure down to single graphene grains. Here we report a high resolution angle and lateral resolved photoelectron spectroscopy (nano-ARPES) study of one-atom thick graphene films on thin copper foils synthesized by chemical vapor deposition. Our results show the robustness of the Dirac relativistic-like electronic spectrum as a function of the size, shape and orientation of the single-crystal pristine grains in the graphene films investigated. Moreover, by mapping grain by grain the electronic dynamics of this unique Dirac system, we show that the single-grain gap-size is 80% smaller than the multi-grain gap recently reported by classical ARPES. [ABSTRACT FROM AUTHOR]

The structural and electronic properties of thermally reduced SrTiOi ( 100) single crystals have been investigated using a probe with real- and reciprocal-space sensitivity: a synchrotron radiation microsopic setup which offers the possibility of scanning photoemission microscopy and angle-resolved photoelectron spectroscopy (ARPES) down to the nanometric scale. We have spectroscopically imaged the chemical composition of samples presenting reproducible and suitable low-energy diffraction patterns after following well-established thermal reduction protocols. At the micrometric scale, Ca-rich areas have been directly imaged using high-energy resolution core-level photoemission. Moreover, we have monitored the effect of Ca segregation on different features of the SrTi03(100) electronic band structure, measuring ARPES inside, outside, and at the interface of surface inhomogeneities with the Ca-rich identified areas. In particular, the interaction of Ca with the well-known intragap localized state, previously attributed to oxygen vacancies, has been investigated. Moreover, the combination of direct imaging and spectroscopic techniques with high spatial resolution has clarified the long-standing dilemma related to the bulk or surface character of Ca segregation in SrTi03. Our results present solid evidence that the penetration depth of Ca segregation is very small. In contrast to what has been previously proposed, the origin of the long-range surface reconstructions can unlikely be associated to Ca due to strong local variations of its surface concentration. [ABSTRACT FROM AUTHOR]

The strain in hybrid van der Waals heterostructures, made of two distinct two-dimensional van der Waals materials, offers an interesting handle on their corresponding electronic band structure. Such strain can be engineered by changing the relative crystallographic orientation between the constitutive monolayers, notably, the angular misorientation, also known as the "twist angle". By combining angle-resolved photoemission spectroscopy with density functional theory calculations, we investigate here the band structure of the WS2/graphene heterobilayer for various twist angles. Despite the relatively weak coupling between WS2 and graphene, we demonstrate that the resulting strain quantitatively affects many electronic features of the WS2 monolayers, including the spin-orbit coupling strength. In particular, we show that the WS2 spin-orbit splitting of the valence band maximum at K can be tuned from 430 to 460 meV. Our findings open perspectives in controlling the band dispersion of van der Waals materials. [ABSTRACT FROM AUTHOR]

We report on the correlation between the electrical behavior and valence band spectra of undoped and Al-doped ZnO films, obtained by using x-ray photoelectron spectroscopy. Although Al-doping can induce a conductivity increase of two orders of magnitude, we show that the gap persists and there is no semiconductor–metal transition upon doping. For the 3% Al-doped ZnO film, we measure a reduction in the band gap of ∼150 meV with respect to the undoped and the 1% doped films. Our results suggest that the band conduction mechanism proposed for undoped ZnO at room temperature still dominates the conduction process in doped films. [ABSTRACT FROM AUTHOR]

The combination of monolayers of different two-dimensional (2D) materials into van der Waals hetero-bilayer structures creates unprecedented physical phenomena, acting as a powerful tool for future devices. Understanding and exploiting these phenomena hinge on knowing the electronic structure and the hybridization of hetero-bilayer structures. Here, we show strong hybridization effects arising between the constitutive single layers of a SnS2/WSe2 hetero-bilayer structure grown by chemical vapor deposition. Surprisingly, the valence band maximum position of WSe2 is moved from the K point for the single layer WSe2 to the Γ point for the aligned SnS2/WSe2 hetero-bilayer. Additionally, a significant photoluminescence quenching is observed for the SnS2/WSe2 hetero-bilayer structure with respect to the WSe2 monolayer. Using photoluminescence spectroscopy and nano-angle-resolved photoemission spectroscopy techniques, we demonstrate that the SnS2/WSe2 heterostructure present a type-II band alignment. These findings directly answer many outstanding questions about the electronic band structure and the band offset of SnS2/WSe2 hetero-bilayers for envisaging their applications in nanoelectronics. [ABSTRACT FROM AUTHOR]

The polaron is a quasi-particle formed by a conduction electron (or hole) together with its self-induced polarization in a polar semiconductor or an ionic crystal. Among various polarizable examples of complex oxides, strontium titanate (SrTiO3) is one of the most studied. Here we examine the carrier type and the interplay of inner degrees of freedom (for example, charge, lattice, orbital) in SrTiO3. We report the experimental observation of Fröhlich polarons, or large polarons, at the bare SrTiO3 surface prepared by vacuum annealing. Systematic analyses of angle-resolved photoemission spectroscopy and X-ray absorption spectra show that these Fröhlich polarons are two-dimensional and only exist with inversion symmetry breaking by two-dimensional oxygen vacancies. Our discovery provides a rare solvable field theoretical model, and suggests the relevance of large (bi)polarons for superconductivity in perovskite oxides, as well as in high-temperature superconductors. [ABSTRACT FROM AUTHOR]

Due to their high surface-to-volume ratio, cylindrical Bi2Te3 nanowires are employed as model systems to investigate the chemistry and the unique conductive surface states of topological insulator nanomaterials. We report on nanoangle-resolved photoemission spectroscopy (nano-ARPES) characterization of individual cylindrical Bi2Te3 nanowires with a diameter of 100 nm. The nanowires are synthesized by electrochemical deposition inside channels of ion-track etched polymer membranes. Core level spectra recorded with submicron resolution indicate a homogeneous chemical composition along individual nanowires, while nano-ARPES intensity maps reveal the valence band structure at the single nanowire level. First-principles electronic structure calculations for chosen crystallographic orientations are in good agreement with those revealed by nano-ARPES. The successful application of nano-ARPES on single one-dimensional nanostructures constitutes a new avenue to achieve a better understanding of the electronic structure of topological insulator nanomaterials. [ABSTRACT FROM AUTHOR]

The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic structure. In trilayer graphene, rhombohedral stacking (ABC) is particularly intriguing, exhibiting a flat band with an electric-field tunable band gap. Such electronic structure is distinct from simple hexagonal stacking (AAA) or typical Bernal stacking (ABA) and is promising for nanoscale electronics and optoelectronics applications. So far clean experimental electronic spectra on the first two stackings are missing because the samples are usually too small in size (μm or nm scale) to be resolved by conventional angle-resolved photoemission spectroscopy (ARPES). Here, by using ARPES with a nanospot beam size (NanoARPES), we provide direct experimental evidence for the coexistence of three different stackings of trilayer graphene and reveal their distinctive electronic structures directly. By fitting the experimental data, we provide important experimental band parameters for describing the electronic structure of trilayer graphene with different stackings. [ABSTRACT FROM AUTHOR]

The electronic band structure of M0S2 single crystals has been investigated using angle-resolved photoelectron spectroscopy and first-principles calculations. The orbital symmetry and k dispersion of these electronic states responsible for the direct and the indirect electronic band gaps have been unambiguously determined. By experimentally probing an increase of the electronic band gap, we conclude that a M0S2 (0002) surface localized state exists just below the valence band maximum at the Γ point. This electronic state originates from the sulfur planes within the topmost layer. Our comprehensive study addresses the surface electronic structure of M0S2 and the role of van der Waals interlayer interactions. [ABSTRACT FROM AUTHOR]

Angle-resolved photoemission spectroscopy (ARPES) is the most direct tool to measure the electronic structure of materials. In particular, fine features of the spectra can be analyzed for evaluating the electron self-energy. Owing to a setup allowing ARPES investigation with submicron resolution and state-of-the-art energy and momentum resolution, we show here first that ARPES spectra of pristine and virtually undoped monolayer graphene acquired on a small spot do not display manifestations of self-energy. We next demonstrate that, although the region of the sample investigated is a unique graphene domain, it displays faint spatial inhomogeneity, both in its crystallographic orientation and its thickness, which is undetectable with conventional ARPES but renders the spectra improper for self-energy extraction. These results indicate that care should be taken when analyzing ARPES spectra obtained with poor spatial resolution. [ABSTRACT FROM AUTHOR]