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Photomultiplication type organic photodetectors (PM‐OPDs) exhibit obvious superiority in weak light detection due to their low dark current density (JD) and large photo‐induced current density (JPI). The JD is one of the important parameters that influences light detection sensitivity of PM‐OPDs, how to effectively suppress the JD is a great challenge to improve the performance of PM‐OPDs. In this work, the JD of PM‐OPDs can be suppressed by employing PTAA or doped‐PTAA as the interfacial layer replacing PEDOT:PSS layer. The PM‐OPDs with PTAA layer exhibit a low JD of 2.3 × 10−7 A cm−2 under −6 V bias, which is much smaller than 1.4 × 10−6 A cm−2 for PM‐OPDs with PEDOT:PSS layer. The small molecule DRCN5T is incorporated into PTAA to further passivate surficial defects of PTAA films, which is conducive to reducing the leakage current of PM‐OPDs. The optimal PM‐OPDs exhibit rather low JD of 8.4 × 10−8 A cm−2 under −6 V bias, as well as external quantum efficiency (EQE) of 31700% and specific detectivity (D*) of 1.2 × 1013 Jones at 370 nm. The signal‐noise‐ratio of optimal PM‐OPDs arrives to 89600 under −4.5 V bias under white light illumination with intensity of 1.5 mW cm−2. [ABSTRACT FROM AUTHOR]

Negative photoconductance (NPC) detectors have attracted continuous attention for constructing advanced and novel optoelectronic devices, including reconfigurable image sensors and optosynaptic systems, especially by combining NPC with positive photoconductance (PPC). However, NPC devices suffer from much lower photosensitivity, slower response speed, and poor stability, especially in the infrared range. In this work, controllable NPC detectors based on organic-gated carbon nanotube field-effect transistors (OG-CNT FETs) are reported and the strong influence of light-induced electrostatic doping on the nonconventional photoresponse is demonstrated. The PM6/Y6-based heterojunction allows efficient near-infrared light absorption and facilitates exciton diffusion. By introducing a floating gate structure with an ultrathin dielectric layer, the OG-CNT FET shows an enhanced NPC effect owing to in situ signal amplification. Compared to other device configurations, the optimal OG-CNT FETs exhibit high responsivity of 72.6 A W-1 at 880 nm, along with improved response/recovery times of 7 and 5 ms. Impressively, gate-tunable switching between NPC and PPC is observed under the same light illumination. The reversible switching can be attributed to the competition between the light-controlled electrostatic coupling and the PM6/Y6 photovoltaic effect, which offers a new approach to achieve bidirectional photoresponses and paves the way for the development of future multifunctional optoelectronic systems. [ABSTRACT FROM AUTHOR]

Photomultiplication type quasi-planar all-polymer photodetectors (PM-QAPDs) are fabricated with P3HT/PY-IT as active layers by employing a sequential spin-coating method. The part of PY-IT can penetrate into a P3HT layer to emerge isolated electron-traps formed with PY-IT surrounded by P3HT. The trapped electron distribution near an Al electrode will determine the spectral response range of PM-QAPDs. Broadband PM-QAPDs can be achieved with a 0.25 μm thick P3HT layer and a ultra-thin PY-IT layer prepared from 1 mg/ml solution, exhibiting a broad response from 320 to 870 nm. An external quantum efficiency (EQE) value of optimal PM-QAPDs approaches 16 000% at 360 nm under −12 V bias. When the thickness of the P3HT layer is increased to 2.4 μm, the PM-QAPDs exhibit a narrowband response from 630 to 870 nm, which can be well explained according to the Beer–Lambert law. The work may provide a smart strategy to adjust response range of PM-QAPDs by alerting the thickness of the donor layer. [ABSTRACT FROM AUTHOR]

Filter‐free narrowband photomultiplication‐type planar heterojunction (PHJ) organic photodetectors (PM‐PHOPDs) are first realized by employing a thick front donor layer and an ultrathin PC71BM layer. The thick front donor layer is employed as an optical field adjusting (OFA) layer. The sequentially coated PC71BM will diffuse slightly into OFA layer, which works as interfacial electron traps to capture photogenerated electrons for assisting hole tunneling injection. The P3HT/PC71BM‐based PM‐PHOPDs exhibit narrowband response with full‐width of half‐maximum of 32 nm and external quantum efficiency (EQE) of 1700% at 650 nm under −20 V bias. Due to the enhanced hole transport and reduced charge recombination in PHJ compared to those in bulk heterojunction (BHJ), the EQE of P3HT/PC71BM‐based narrowband PM‐PHOPDs is twice as P3HT:PC71BM BHJ‐based narrowband PM‐OPDs under the same bias. The response peak of PM‐PHOPDs is adjusted from 650 to 695 or 745 nm by incorporating SMPV1 or DRCN5T in OFA layers due to the red‐shifted absorption edge. The EQEs of 3600% at 695 nm and 870% at 745 nm are obtained for P3HT:SMPV1 and P3HT:DRCN5T‐based PM‐PHOPDs under −20 V bias, respectively. This work provides a smart strategy to achieve narrowband PM‐OPDs by designing different OFA layers. [ABSTRACT FROM AUTHOR]

Ultraviolet (UV) narrowband photodetectors play a critical role in missile detection, flame monitoring, optical communication, etc. It is a great challenge to realize UV narrowband organic photodetectors due to wide photo‐harvesting property of organic materials, especially for photomultiplication type organic photodetectors (PM‐OPDs). In this work, a smart strategy is proposed to achieve UV narrowband response by coupling Fabry−Pérot microcavity with PM‐OPDs. PM‐OPDs are realized by using poly(3‐hexylthiophene‐2,5‐diyl):[6,6]‐phenyl‐C71‐butyric acid methyl ester (100:1, w/w) as active layers, exhibiting broadband response range covering from UV–vis region. Series of optical microcavities consisting of Ag/LiF/Ag with UV spectral selectivity are prepared, which are employed to couple with the PM‐OPDs for achieving UV narrowband response. The UV spectral selectivity of optical microcavity can be optimized by tuning the thickness of spacer layer and mirror layers, which can further regulate the photogenerated electron distribution near Al electrode to optimize the external quantum efficiency (EQE) spectra of the PM‐OPDs coupled with optical microcavity. The optimized PM‐OPDs coupled with optical microcavity exhibit EQE of 9300% at 350 nm and narrowband response with 33 nm full‐width at half‐maximum under −15 V bias. This work indicates that PM‐OPDs coupled with optical microcavity should be an efficient strategy for achieving UV narrowband response. [ABSTRACT FROM AUTHOR]

Narrowband photomultiplication‐type organic photodetectors (PMOPDs) are realized with poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) as the optical field adjusting (OFA) layer and transfer‐printed P3HT: [6,6]‐phenyl‐C71‐butyric acid methyl ester (PC71BM) (50:1, w/w) as the photomultiplication (PM) layer. The thickness of the OFA layers is adjusted to optimize interfacial trapped electron distribution and density, which determines the external quantum efficiency (EQE) and spectral response range of PMOPDs. Narrowband PMOPDs with 2.5 µm thick P3HT as the OFA layer exhibit two narrow response peaks at 350 and 660 nm, and the corresponding EQE values at 350 and 660 nm are 180% and 760% under an applied bias of −20 V. A wide bandgap polymer poly[N,N′‐bis(4‐butylphenyl)‐N,N′‐bis(phenyl)benzidine] (P‐TPD) is deliberately incorporated into OFA layer for adjusting interfacial trapped electron distribution near Al electrode. Narrowband PMOPDs exhibit only one response peak at 660 nm with the enhanced EQE value of 1120% under the same bias. The enhanced EQE of PMOPDs with P‐TPD is primarily attributed to the increased hole tunneling injection and transport, which can be ascribed to the enhanced trapped electron density near the Al electrode and the improved hole mobility, respectively. Clearly resolved images can be obtained from the imaging system with the narrowband PMOPDs as sensing pixel without any current preamplifier, indicating the promising potential of PMOPDs in imaging sense. [ABSTRACT FROM AUTHOR]

As a promising candidate for next‐generation photodetectors, organic photodetectors (OPDs) outperform the commercial inorganic photodetectors in terms of solution and large‐area processability, mechanical flexibility, tunable spectral response range, low‐cost manufacturing, and light weight. The OPDs with broadband spectral response attract an extensive attention due to their potential in wide application fields, such as flexible image sensing, surveillance, and health monitoring. In this review, recent advances in broadband OPDs are summarized as two sections: i) Photodiode type OPDs (PD‐OPDs) based on thick‐film strategy, ternary strategy, interfacial engineering, and multilayered strategy. ii) Photomultiplication type OPDs (PM‐OPDs) with traps in active layer, traps in interfacial layer, and charge blocking layer. Some real applications on image sensors and photoplethysmography (PPG) sensors are also introduced on the basis of broadband OPDs. New insights on developing the broadband OPDs are put forward for improvement of broadband OPDs. [ABSTRACT FROM AUTHOR]

A new zinc porphyrin, named as Por4IC, was synthesized, which through extension of conjugation and an enhancement of planarity and donor–acceptor interactions exhibits a very low band gap. The molecule was able to efficiently facilitate a photomultiplication effect in blend with P3HT which was assisted by electron trapping followed by hole tunneling injection from the Al electrode giving rise to a high external quantum efficiency of 22 182% and a specific detectivity of 4.4 × 1012 Jones at 355 nm and at −15 V bias. This work introduces porphyrin derivatives as promising dopants for photomultiplication type photodetectors. [ABSTRACT FROM AUTHOR]

Organic photodetectors with photomultiplication, i.e., ultrahigh gain, have drawn extensive attention. Here, we report poly(3-hexylthiophene):3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone)-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2′,3′-d′]-s-indaceno[1,2-b:5,6-b′]dithiophene)-based organic photodetectors with a structure of indium tin oxide/interlayer/active layer/MoOx/Al. With the selection of appropriate bottom electrode interlayer materials such as ZnO, PFN, and K2CO3, the devices show ultrahigh gain over the entire measured spectral range and good long-term stability. An optimized device with a ZnO interlayer exhibits a superior external quantum efficiency (EQE) of 19 300% at 360 nm, a detectivity of 2.15 × 1012 Jones at 600 nm, and a linear dynamic range of 98.36 dB under a bias voltage of −20 V. Moreover, the device also shows improved long-term stability that preserves 70% of its initial EQE after 120 h in the ambient environment without encapsulation. [ABSTRACT FROM AUTHOR]

It is a great challenge to obtain broadband response perovskite photodetectors (PPDs) due to the relatively large bandgaps of the most used methylammonium lead halide perovskites. The response range of the reported PPDs is limited in the ultraviolet-visible range. Here, highly sensitive PPDs are successfully fabricated with low bandgap (≈1.25 eV) (FASnI3)0.6(MAPbI3)0.4 perovskite as active layers, exhibiting a broadband response from 300 to 1000 nm. The performance of the PPDs can be optimized by adjusting the thicknesses of the perovskite and C60 layers. The optimized PPDs with 1000 nm thick perovskite layer and 70 nm thick C60 layer exhibit an almost flat external quantum efficiency (EQE) spectrum from 350 to 900 nm with EQE larger than 65% under −0.2 V bias. Meanwhile, the optimized PPDs also exhibit suppressed dark current of 3.9 nA, high responsivity ( R) of over 0.4 A W−1, high specific detectivity ( D*) of over 1012 Jones in the near-infrared region under −0.2 V. Such highly sensitive broadband response PPDs, which can work well as self-powered conditions, offer great potential applications in multicolor light detection. [ABSTRACT FROM AUTHOR]

Organic photodetectors (OPDs) have achieved rapid development due to the emergence of organic semiconducting materials with high absorption coefficient and tunable optical bandgap, as well as the progress in device physics and engineering. The working mechanism and fundamental parameters of OPDs are briefly introduced. Some smart strategies for realizing high performance photovoltaic type narrowband OPDs (PV‐NB‐OPDs) and photomultiplication type narrowband OPDs (PM‐NB‐OPDs) are comprehensively reviewed. The recent progress of PV‐NB‐OPDs and PM‐NB‐OPDs is systematically introduced from fundamentals to prospects, exhibiting colorful development and application potential in full‐color imaging, spectroscopic photodetection, medical monitoring, and optical communication, which may promote their rapid development for the potential applications. [ABSTRACT FROM AUTHOR]

Photodetectors as a significant unit of intelligent optoelectronic systems have stimulated immense attention from multidisciplinary areas. Photomultiplication (PM) is desirable for sensitive photodetectors with strong detection capability of weak light, which can further simplify the photo‐detection systems without pre‐amplifier circuit. For organic photodetectors (OPDs), PM phenomenon cannot be realized by utilizing the principle of avalanche effect or impact ionization as in inorganic materials, stemming from organic semiconductor materials with large exciton binding energy and disordered structure. In this review, the recent progress on PM type OPDs is comprehensively summarized from the perspective of device physics and material science. Charge tunneling injection induced by interfacial traps becomes the mainstream working mechanism for obtaining PM phenomenon. A series of PM type OPDs was achieved by utilizing interfacial blocking layer and introducing trap states into active layer or interfacial layer. The filter‐free PM type narrowband OPDs are realized by combining the concept of charge injection narrowing with the mechanism of PM. Meanwhile, further development on this hot topic is proposed and fully discussed, including multifunctional OPDs, organic–inorganic hybrid photodetectors, and photodetector systems. Photomultiplication (PM) is desirable for sensitive organic photodetectors (OPDs) with strong detection capability of weak light, which avoids the use of pre‐amplifier circuit and further simplify the photo‐detection systems and cut costs. The PM (external quantum efficiency (EQE) > 100%) type multifunctional OPDs would have more potential application in the intelligent optoelectronic systems. [ABSTRACT FROM AUTHOR]

We report a trap-assisted photomultiplication (PM) phenomenon in solution-processed polymer photodetectors (PPDs) based on P3HT:PC71BM as the active layer, the maximum EQE of 16,700% is obtained for the PPDs with PC71BM doping weight ratio of 1%. The PM phenomenon is attributed to the enhanced hole tunneling injection assisted by trapped electrons in PC71BM near Al cathode, which can be demonstrated by the transient photocurrent curves and EQE spectra of PPDs with different PC71BM doping ratios. The positive effect of trapped electrons in PC71BM near Al cathode on the hole tunneling injection is further confirmed by the simulated optical field and exciton generation rate distributions in the active layer and the EQE spectra of PPDs with Al(1)/P3HT:PC71BM(100:1)/Al(2) device structure under forward and reverse biases. This discovery may open a new road for organic materials to be used in highly sensitive photodetectors while preserving the advantages of organic materials. [ABSTRACT FROM AUTHOR]

A new photo-crosslinkable donor polymer, PM6-Br50 facilitates the fabrication of p- PHJ OPDs through LbL deposition of D and A materials overcoming solvent-imposed constraints. The integration of a p- PHJ architecture with a conjugated polyelectrolyte as a hole-transport layer resulted in a significantly reduced dark current, leading to a remarkably high specific detectivity. [Display omitted] • A new polymer donor is synthesized by introduction of photo-crosslinkable side chains. • Layer-by-layer OPDs are fabricated utilizing a photo-crosslinkable polymer donor. • A conjugated polyelectrolyte-based HTL is employed to inhibit electron injection. • A significantly high detectivity is achieved with a suppressed dark current. The effective reduction of dark (or noise) current presents a significant hurdle in enhancing the detectivity of organic photodetectors (OPDs). To address this challenge, a photo-crosslinkable donor polymer, PM6-Br50, is synthesized by introducing bromoalkyl side-chains onto the PM6 structure. This modification enables the formation of a pseudo planar heterojunction (p- PHJ) structure of crosslinked donor/acceptor through a layer-by-layer (LbL) sequential process without the necessity for an semi-orthogonal solvent. This innovation effectively overcomes solvent-related limitations in the LbL process. Additionally, we replace the semi-metallic hole-transport layer (HTL), PEDOT:PSS, with a semiconducting conjugated polyelectrolyte (TPAFS-TMA) with a high conduction band. The p- PHJ configuration, featuring pure donor/anode and pure acceptor/cathode contacts, enhances the charge injection barrier for electrons (holes) from the anode (cathode) in the dark under reverse bias, effectively minimizing dark current. Furthermore, the TPAFS-TMA HTL serves to impede electron injection from the anode. Through the synergistic combination of these two strategies, a significantly reduced dark current density (4.03 × 10−10 A cm−2) is measured by four orders of magnitude, compared to the bulk heterojunction OPDs with PEDOT:PSS. Furthermore, we measure remarkably high shot noise-based and total noise current-based specific detectivities of 4.27 × 1013 and 6.97 × 1012 cm Hz1/2 W−1 (with linear dynamic range of 73.7 dB), respectively. [ABSTRACT FROM AUTHOR]

Photomultiplication (PM) type organic photodetectors (OPDs) with two detection windows were fabricated with a specific structure of ITO/PDIN/active layers/semitransparent Al, only holes can be transported in the active layers with 100:1 wt ratio of P3HT to PC61BM. The specific structure makes the PM type OPDs working under top/bottom light illumination and forward/reverse bias conditions, exhibiting a tunable spectral response range. The rather less PC 61 BM may prefer to be surrounded by P3HT to form some isolated electron traps in the active layers, which is beneficial to decreasing the dark current density (J D) of OPDs with hole-only transport channels provided by P3HT. Under dark condition, holes are hardly injected from ITO/PDIN or Al electrode to the highest occupied molecular orbits (HOMO) of P3HT due to the large interfacial injection barriers, resulting in the rather low J D. Holes can be easily injected from electrodes due to the trap-assisted interfacial band bending under light illumination conditions. The external quantum efficiency (EQE) spectra of PM type OPDs are determined by the photogenerated electron distribution on the cross-section near electrode, which can be well supported by the corresponding simulation results based on transfer matrix method. The PM type OPDs integrated with two detection windows exhibit broadband and narrowband response range under forward or reverse bias, which should have great potential in the integrated optoelectronic products, especially in the field of artificial intelligence. Image 1 • The PM type OPDs with tunable spectral response range are firstly reported. • The PM type OPDs can work well under top/bottom illumination and forward/reverse bias conditions. • Semitransparent Al electrode enables the PM type OPDs with two detection windows. • PDIN interfacial layer enable the PM type OPDs working at forward/reverse bias. [ABSTRACT FROM AUTHOR]

Photomultiplication type organic photodetectors (PM-OPDs) with a sandwich structure of ITO/PNDIT-F3N/P3HT:[71]PCBM(100:1, wt/wt)/Al were successfully developed, exhibiting different response characteristics under forward or reverse bias. The rather less [71]PCBM can act as isolated electron traps to capture photogenerated electrons. The trapped electrons near ITO (Al) electrode can make interfacial band bending for hole tunneling injection from external circuit under forward (reverse) bias. The injected holes can be efficiently transported along the channel provided by P3HT and then collected by the corresponding electrode under bias. The external quantum efficiency (EQE) spectral shape of PM-OPDs is primarily determined by the trapped electron distributions near ITO or Al electrode under forward or reverse bias. The PM-OPDs exhibit flat EQE spectra under forward bias and 'M-shaped' EQE spectra under reverse bias, which is consistent with the curves of trapped electron distribution near ITO or Al electrode. The champion EQE values of PM-OPDs arrive to 2550% at 425 nm under 10 V bias and 2360% at 365 nm under −10 V bias. The PM-OPDs exhibit distinct response speed under forward or reverse bias, which is primarily attributed to the different trapped electron density near ITO or Al electrode under incident light from ITO side. [Display omitted] • The PNDIT-F3N interfacial layer makes PM-OPDs work well under forward or reverse bias. • The response speed of PM-OPDs was investigated under distinct polarity bias, resulting from trapped electrons near electrode. • The champion EQE values of PM-OPDs arrive to 2550% at 425 nm under 10 V bias and 2360% at 365 nm under −10 V bias. [ABSTRACT FROM AUTHOR]

Highly sensitive double layered photomultiplication type polymer photodetectors (PM-PPDs) are designed by decreasing P3HT:PC 61 BM layer thickness and employing wide bandgap poly-TPD as buffer layer, attributed to the enhanced hole tunneling injection and improved hole transport. Ternary strategy is applied to further improve performance of double layered PM-PPDs. [Display omitted] • P3HT:PC 61 BM layer thickness is decreased to enhance hole tunneling injection. • Poly-TPD layer is inserted to keep large bias-withstanding characteristic of PM-PPDs. • Ternary strategy is adopted to further improve performance of double layered PM-PPDs. Photomultiplication type polymer photodetectors (PM-PPDs) are successfully achieved via interfacial trap-assisted hole tunneling injection from external circuit. The external quantum efficiency (EQE) of PM-PPDs is mainly determined by the number of injected holes from external circuit and flowing across the devices. Although the trapped electron density near Al electrode can be increased for efficient hole tunneling injection by decreasing the thickness of active layers, which also makes the PM-PPDs vulnerable to breakdown. A smart strategy is firstly proposed to obtain large EQE values by decreasing the thickness of active layers and keep excellent withstanding large bias characteristic of PM-PPDs by using wide bandgap polymer poly-TPD as buffer layer. The optimal double layered ternary PM-PPDs were obtained with 40 nm poly-TPD as buffer layer and 90 nm P3HT:PBDB-T:PC 61 BM (80:20:2, wt/wt/wt) as active layers, exhibiting a rather large EQE value of 21400% and specific detectivity of 1.0 × 1013 Jones at 430 nm under −8 V bias. This work indicates that inserting wide bandgap and high hole mobility material as buffer layer should be an efficient strategy to prepare highly sensitive PM-PPDs, benefiting from the increased hole tunneling injection from external circuit and efficient hole flowing across the devices. [ABSTRACT FROM AUTHOR]

Liquid crystal material BTR was employed as regulator to improve hole transport in blend active layer, leading to the optimized performance of photomultiplication type polymer photodetectors. [Display omitted] • BTR with high-crystallinity is used to adjust molecular arrangement in active layers. • Hole mobility is improved by incorporating BTR into active layers. • A new strategy is proposed to optimize performance of PM-PPDs. Photomultiplication type polymer photodetectors (PM-PPDs) were achieved with PBDB-T:BTPV-4F (98:2, wt/wt) as blend active layer based on a sandwich structure. Isolated electron traps are formed due to the rather less BTPV-4F surrounded by PBDB-T in blend active layers. Trapped electrons in BTPV-4F near Al electrode will induce interfacial band bending for hole tunneling injection into blend active layers. The tunneling injected holes will be transported along the channels formed by PBDB-T in blend active layers, photomultiplication phenomenon will be obtained when the number of holes crossing through blend active layers is larger than that of incident photons per unit time. Liquid crystal material BTR was selected as regulator to adjust PBDB-T molecular arrangement for improving hole mobility in blend active layers, leading to optimized performance of PM-PPDs. Optimal PM-PPDs were obtained with PBDB-T:BTR:BTPV-4F (89:9:2, wt/wt/wt) as blend active layer. The external quantum efficiency (EQE) values of optimal PM-PPDs are 1.5 times that of PM-PPDs based on PBDB-T:BTPV-4F (98:2, wt/wt) in the whole spectral response range under −10 V applied bias. The EQE of optimal PM-PPDs can be markedly improved by increasing applied bias, which is improved from 600% to 19,300% at 660 nm with applied bias increased from −10 to −20 V. The responsivity of optimal PM-PPDs arrives to 102 A W−1 at 660 nm under −20 V applied bias. [ABSTRACT FROM AUTHOR]

The broadband organic photodetectors (OPDs) with photomultiplication (PM) phenomenon are fabricated by using Y6 doped with rather less PBDB-T as active layers having electron-only transport characteristic. The PM-OPDs with PBDB-T:Y6 (3:100, wt/wt) as active layers exhibit the external quantum efficiency (EQE) of 18,000% at 350 nm and 15,000% at 870 nm under 1 V bias. The PM-OPDs exhibits a broad spectral response range from 320 to 950 nm, which is mainly determined by the trapped hole distribution near Al electrode. The working mechanism of PM-OPDs should be attributed to interfacial trap-assisted electron tunneling injection, which can be further confirmed from the EQE spectral shape of PM-OPDs with different active layer thickness. The n -type polymer PZ1 was selected as interfacial layer to be inserted between PEDOT:PSS and active layers, which makes PM-OPDs with PZ1 interfacial layer work well under forward and reverse bias. This work may provide a smart strategy to achieve broadband PM-OPDs by adjusting the distribution of trapped charge near electrode. The PM-OPDs exhibits a broad spectral response range from 320 to 950 nm and the external quantum efficiency (EQE) of 18,000% at 350 nm and 15,000% at 870 nm under 1 V bias. Image 1 • Broadband PM-OPDs were fabricated with PBDB-T:Y6 (3:100, wt/wt) as active layers. • The optimized EQE values of the broadband PM-OPDs are 18,000% at 350 nm at 1 V. • The PM-OPDs exhibit a broad spectral response range from 320 to 950 nm. • The PM-OPDs with PZ1 interfacial layer can work under bidirectional bias. [ABSTRACT FROM AUTHOR]