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We present a dark current analysis in waveguide-coupled germanium vertical p-i-n photodetectors. In the analysis, a surface leakage current and a bulk leakage current were separated, and their activation energies were extracted. The surface leakage current originating from the minority carrier generation on the Ge layer sidewalls, governed by the Shockley-Read-Hall process and enhanced by the trap-assisted-tunneling process, was identified as the main contribution to the dark current of vertical p-i-n photodiodes at room temperature. The behavior of this surface leakage current as a function of temperature and reverse bias voltage is well reproduced by using the Hurckx model for trap-assisted-tunneling. [ABSTRACT FROM AUTHOR]

Analog radio-over-fiber transceivers allow a substantial reduction in the complexity of the remote radio heads in the wireless network of the future. In this letter, we discuss the building blocks for such a transceiver implemented on a silicon photonics platform, with the heterogeneous integration of III–V devices and the co-integration with electronics. Transmission experiments that demonstrate the viability of such integrated analog transceivers are described. [ABSTRACT FROM AUTHOR]

We report on an optical chip-to-chip interconnect solution, thereby demonstrating plasmonics as a solution for ultra-dense, high-speed short-reach communications. The interconnect comprises a densely integrated plasmonic Mach–Zehnder modulator array that is packaged with standard driving electronics. On the receiver side, a germanium photodetector array is integrated with trans-impedance amplifiers. A multicore fiber provides a compact optical interface to the array. We demonstrate $4\times20$ Gb/s on–off keying signaling with direct detection. [ABSTRACT FROM PUBLISHER]

We present active components developed in imec's silicon photonics platform that enable 50-Gb/s non-return-to-zero operation using CMOS compatible voltages. [ABSTRACT FROM PUBLISHER]

We demonstrate 100-Gbps silicon-contacted germanium waveguide p-i-n photodetectors integrated on imec's silicon photonics platform. The performance of 14 and 20 μm long devices is compared. The responsivity of the devices is 0.74 and 0.92 A/W at 1550 nm, respectively. [ABSTRACT FROM PUBLISHER]