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Display Omitted Investigating PhOLEDs with different solvents and dopants concentrations.High efficiency white PhOLEDs induced by the electron transport/hole blocking material.To achieve efficient and low-cost small-molecule-based white PhOLEDs. In this study, white phosphorescent organic light-emitting diodes (PhOLEDs) have been demonstrated with small molecule by using solution processes. Spin-coating is employed as the way for deposition method. 4,4'-N,N'-dicarbazole-biphenyl (CBP) which is typical small molecule based ink is used for spin-coating method, and three phosphorescent dopants materials, Firidium(III) bis(4,6-difluoro phenyl)-pyridinato-N,C2'] picolinate (FIrpic), bis1-(phenyl) isoquinoline) iridium(III) acetyl acetonate (Ir(piq)2 (acac))], and iridium(III) tris(2-phenylpy-ridine) (Ir(ppy)3) were prepared. For spin-coating processes, various parameters properties were investigated including materials concentrations, solvents effect, and electron transporting materials to get high efficiency and white color of white PhOLED device. As a result, the precisely controlled solution processes could be a promising technology for solution process can be a good alternative of vacuum deposition technology.

Hybrid white organic light emitting diodes (HWOLEDs) with fluorescence and phosphorescence hybrid structures are studied in this work. HWOLEDs were fabricated with blue/red emitting layers: fluorescent host material doped with sky blue material, and bipolar phosphorescent host emitting material doped with red dopant material. An electron blocking layer is applied that provides hole red guest emitter hole trapping effects, increases the charge carrier injection quantity into the emitting layers and controls the recombination zone (RZ) that helps balance the device color. Spacer layers were also inserted to expand the RZ, increase efficiency and reduce energy quenching along with roll-off effects. The resulting high efficiency warm white OLED device has the lower highest occupied molecule orbital level red guest material, current efficiency of 15.9 cd/A at current density of 20 mA/cm2, and Commission Internationale de L'Eclairage coordinates of (0.34, 0.39).

A mixed host emitting layer consisting of TCTA and 3TPYMB can greatly increase the efficiency of blue and white organic light emitting diodes (OLED). The hole transport material TCTA can be used as a buffer layer and a hole-transport host emitting layer. Combining TCTA with electron-transport 3TPYMB produces a mixed host emitting layer that can effectively confine the charge carrier within luminous layer. The electron transport layer 3TPYMB reduces electronic injection energy barriers, improves charge balance, and reduces drive voltage to 4.38 V with proper adjustment to optimum thickness. The luminous efficiency of blue light OLED mixed with FIrpic can reach 36.0 cd/A, 27.5 lm/W, and luminous efficiency of white light OLED mixed with Os tangerine adulterant can reach 36.1 cd/A, 26.4 lm/W.

White phosphorescent organic light-emitting diodes (WPHOLED) with high efficiency and low driving voltage were achieved by incorporating an electron transport material (3TPYMB) into a hole transport-type host (TCTA) as a mixed-host structure. For electrons, the emitting layer is nearly barrier-free until they reach the region of exciton formation, which keeps the driving voltage low. Therefore, improved the charge carrier balance within the emitting layer and enhanced the power efficiency of device. White PHOLED at a luminance of 1000 cd/m2 shown a driving voltage of 4.38 V, luminance efficiency of 36.1 cd/A, and power efficiency of 26.4 lm/W was observed. Furthermore, the power efficiency can be improved to 34.27 lm/W, and luminance efficiency to 46.7 cd/A by attaching a brightness enhancement film (BEF).

The characteristics of blue phosphorescent organic light-emitting diodes (PHOLEDs) with hole–buffer structure were investigated by inserting a hole transport-type host (TCTA) between the hole transport layer (HTL, TAPC) and emitting layer (EML, FIrpic:26DCzPPy). The hole transport-type host has lower hole mobility than the HTL material, which could effectively control the hole injection current from the HTL into the EML. Moreover, the hole injection barrier from HTL to EML can be reduced due to the suitable HOMO level of the insertion hole buffer layer, which results in the improvement of driving voltage. Furthermore, the power efficiency was improved by controlling the hole injection current through buffer layer thickness optimization. From the experimental results, an optimal blue PHOLED structure was established: ITO/TAPC(20 nm)/TCTA(25 nm)/FIrpic:26DCzPPy(20 nm)/3TPYMB(40 nm)/LiF(0.5 nm)/Al(200 nm). At luminance of 1000 cd/m2, the driving voltage decreased from 6.3 to 5.1 V and power efficiency enhanced from 6.7 to 13.5 lm/W could be observed.

Solution-based processing was applied to fabricate green phosphorescent organic light-emitting diodes (OLEDs). EPH31 was used as a phosphorescent host, doped with guest dopant green phosphorescent Ir(ppy)3, and dissolved in chlorobenzene solvent to form the emitting layer. Device structural parameters were controlled by changing the spin coating speed of the emitting layer and hole injection layer [poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate), PDOT:PSS] to adjust the thickness of the electron transport layer [tris(8-hydroxyquinolinato)aluminum, Alq3]. In addition, the differences in using CsF and LiF materials as the electron injection layer were investigated. A maximum current efficiency of 13.6 cd·A-1 was obtained at a high emitting layer spin coating speed. Despite the close resemblance in both the luminance intensity and current efficiency when using CsF and LiF as the electron injection layer, CsF devices had a low driving voltage. Smooth and stable films resulting from the spin coated hole injection layer, along with the control of the thickness of the electron transport layer (Alq3) and electron injection layer (CsF), effectively improved the performance of green OLEDs. The emitting layer host material (CBP) and three guest dopants [Firpic, Ir(ppy)3, and Ir(piq)2] were dissolved in toluene solvent during solution preparation to fabricate white OLEDs. The properties of the resulting solution-processed white PHOLEDs are a current efficiency of 2.4 cd·A-1 at 20 mA·cm-2 and CIE coordinates of (0.33, 0.33) at 9 V. Results of these experiments demonstrate that solution processing can be used as an alternative to and in conjunction with thermal evaporation.

This study is carried out to discuss how to reduce the driving voltage of blue phosphorescent organic light-emitting diodes (PHOLEDs) by using a thin double-emission layer. A hole transport-type host (TCTA) is inserted between the hole transport layer (TAPC) and the emitting layer (EML), constituting a buffer layer between them with the aim of improving charge carrier balance. Furthermore, in this study, we also utilize the interface between double light-emitting layers of devices by codoping them with a red phosphorescent dopant [Os(bpftz)2(PPh2Me)2]. An Os complex with a high-lying highest occupied molecular orbital (HOMO) energy level (trapping holes) is codoped at the interface between emitting layers and an exciton-formation zone is expanded to obtain a white PHOLED with high efficiency. From the results, the optimal structure of the white device exhibits a yield of 35 cd A-1, a power efficiency of 22 lm W-1, and CIE coordinates of (0.33,0.38) at a luminance of 1000 cd m-2. Furthermore, the power efficiency can be improved to 30 lm W-1 by attaching the outcoupling enhancement film.