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For the realization of high conductive and transparent electrodes on flexible substrates, indium tin oxide(ITO), Ag, and ITO were sequentially deposited on polyethylene terephthalate(PET) and a Q-switched Nd:YVO4laser was used for direct etching of the ITO–Ag-ITO films. Considering the complementary relationship between transmittance and conductivity, Ag was deposited for different sputtering times and the laser etched results were also compared and analyzed. Considering the laser etched shape, the ITO–Ag-ITO electrodes were patterned with the optimized laser beam condition. From the current-voltage characteristics and multi-meter measurement, much lower resistances were obtained from electrically isolated ITO-Ag-ITO electrode. [ABSTRACT FROM PUBLISHER]

In this paper we have studied a low-temperature process of fabricating zinc oxide (ZnO) thin-film transistors (TFTs) on polyethylene terephthlate (PET) substrate. PET film has a lower glass transition temperature (Tg = 120°C) than costly Polyethersulphone (PES) film (Tg = 230°C). Therefore we applied a low-temperature cross-linked poly-vinylphenol (c-PVP) process to annealing at 110°C instead of the conventional c-PVP process (annealing at 165°C). The resulting TFTs based on oxide fabricated by the low-temperature process were similar in electrical characteristics to conventional TFTs. In addition, the ZnO TFTs fabricated by the low-temperature process exhibited a field-effect mobility of 0.075 cm2/Vs, a threshold voltage of 15 V and an on/off ratio of 1.7 × 105 respectively. [ABSTRACT FROM PUBLISHER]

In the fabrication of transparent conductive oxide thin film transistor (TFT), an atomic layer deposited (ALD) zinc oxide (ZnO) and a cross-linked poly-vinyl-alcohol (c-PVA) were each used as active layer and gate insulating layer on poly-ethylene (PET) substrate respectively. Considering the transmittance and the deposition rate of the ALD ZnO at a low temperature without any damage on PET substrate, the ZnO layer was deposited at a temperature of 120°C on a spin-coated c-PVA layer. From the atomic force microscope (AFM) images, it was possible to conclude that the surface morphologies of ZnO deposited on a c-PVA layer was not inferior to those of ZnO deposited on bare-Si and that the c-PVA can be used as a gate insulator at 120°C. The fabricated ZnO TFT showed good electrical characteristics such as the mobility of 0.1 cm2/V · s, on-off current ratio of 4.5 × 104. [ABSTRACT FROM AUTHOR]