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In recent years, the lead-free double perovskite Cs2AgBiBr6 has emerged as an appealing alternative to lead-based perovskites due to its nontoxicity and long-term stability. In this study, we employed methyl acetate as an antisolvent and prepared high-quality Cs2AgBiBr6 films by a facile one-step spin-coating method. The prepared films exhibited excellent crystallinity with densely packed crystal grains. The root mean square roughness and average roughness of the obtained Cs2AgBiBr6 perovskite films were 6.69 and 5.43 nm, respectively. Furthermore, the memory device based on the Cs2AgBiBr6 perovskite films exhibited uniform and repeatable bipolar resistive switching performance with an ON/OFF ratio of 15, an endurance of 80 cycles, and a retention time of 104 s. This work showcases a simple and convenient one-step spin-coating method for depositing high-quality Cs2AgBiBr6 thin films while highlighting their potential application in resistive switching memories based on lead-free double perovskites. [ABSTRACT FROM AUTHOR]

Recently, zero-dimensional (0D) lead-free Cs3Cu2I5 materials have become one of the most attractive research hotspots in the optoelectronic field owing to their simple preparation method and long-term air stability. However, the photoluminescence quantum yield (PLQY) of the blue luminescence of Cs3Cu2I5 still lags behind those of the green and red luminescence of lead halide perovskites. Herein, 0D lead-free Cs3Cu2I5 films modulated by hydroiodic acid (HI) with a high PLQY of blue luminescence are addressed. The results show that the particle size of the Cs3Cu2I5 films decreases as the added amount of HI increases, from 223.3 (without HI) to 200.7 nm (with 0.076 mmol HI). The Cs3Cu2I5 films with 0.038 mmol HI display the lowest root-mean-square roughness of 14.7 nm. Moreover, the as-prepared films all exhibit blue luminescence at 445 nm, and the PLQY of Cs3Cu2I5 films reaches 85.3% when 0.038 mmol HI is added. Most importantly, the obtained films demonstrate long-term air stability under an ambient atmosphere, and the crystal structure and PLQY of Cs3Cu2I5 films have no obvious variation after 150 days. This air-stable lead-free blue luminescence with high PLQY provides a new strategy to promote the blue luminescence optical property of halide perovskite materials. [ABSTRACT FROM AUTHOR]

Recently, metal halide perovskite materials (CsPbX 3 , X = Cl, Br, and I) have attracted extensive attention for designing optoelectronic devices owing to their tuneable bandgap and high photoluminescence quantum yields (PLQYs). However, the corresponding study of CsPbX 3 perovskite quantum dots (QDs) with blue luminescence still lags far behind that of their red and green counterparts. Herein, we developed aluminium (Al3+) ion-doped CsPbBr 3 perovskite QDs through a supersaturated recrystallization synthetic approach at room temperature. The crystal structure and optical properties of the as-prepared QDs were systematically characterized. The results reveal that the particle size and lattice spacing of Al3+ ion-doped CsPbBr 3 QDs decrease as the Al/Pb molar ratio increases, which is attributed to the radius of Al3+ ions being much smaller than Pb2+ ions. A significant blueshift in the luminescence from 503 nm to 465 nm of Al3+ ion-doped QDs is observed as the Al/Pb molar ratio increases. Moreover, high colour purity (wide full-width at half-maximum of 83.3 meV) blue photoluminescence emission at 465 nm with a PLQY of 65.7% is achieved when the Al/Pb ratio reaches 1.0 in the Al3+ ion-doped CsPbBr 3 QDs, which shows good stability under ambient atmosphere. These as-prepared high colour purity blue luminescence Al3+ ion-doped CsPbBr 3 QDs show promising potential in blue optoelectronic fields. • A facile strategy to synthesize less-lead Al3+ ion-doped CsPbBr 3 QDs at room-temperature was proposed. • A significant blueshift from 503 nm to 465 nm of Al3+ ion-doped QDs is observed as the Al/Pb molar ratio increase. • The high colour purity blue photoluminescence emission at 465 nm with PLQY of 65.7% is achieved. [ABSTRACT FROM AUTHOR]