Search

Recently, lead‐free Sn‐based perovskite light‐emitting diodes (PeLEDs) have attracted wide attention due to their near‐infrared emission and environmental friendliness. However, desired Sn2+ is easily oxidized to Sn4+ in the crystallization process, resulting in defects and intrinsically p‐doped properties in the perovskite films. The uncontrollable oxidation affects the charge injection balance and radiative recombination, leading to poor device performance. Herein, a bi‐functional conductive molecular, 2,7‐bis(diphenylphosphoryl)‐9,9′‐spirobifluorene (SPPO13) with two P═O functional groups, is used to interact with perovskite to passivate defects and suppress the oxidation of Sn2+. Moreover, the SPPO13 modification layer inserted between the perovskite emitter and the electron transport layer can regulate the carrier injection and transport, thus promoting the charge balance. As a result, the high‐performance near‐infrared CsSnI3 PeLEDs with a record external quantum efficiency (EQE) of 6.60% and ultra‐low efficiency roll‐off are achieved. The work provides a novel approach to regulate defect passivation and charge transport for efficient Sn‐based PeLEDs. [ABSTRACT FROM AUTHOR]

Perovskite light‐emitting diodes (Pero‐LEDs) with external quantum efficiencies (EQEs) of over 20% have been achieved in the last several years. However, the reproducibility of such high‐efficiency Pero‐LEDs is still low. The perovskite film quality, especially for the non‐radiative defects, is crucial in determining the device performance. These defects may lie in bulk grains, grain boundaries, and interfaces of the as‐formed perovskite films. Here, a polymer infiltrative treatment method is developed to realize effective and universal defect passivation. Specifically, poly(vinylidene fluoride) (PVDF) polymer chains are blended into the perovskite films before they are fully crystallizing. This infiltrative treatment method can regulate crystallization and passivate defects through the chemical interactions of perovskite lattices and PVDF. As a result, high‐quality perovskite films with void‐free surfaces and few‐defect crystals are obtianed. The corresponding Pero‐LEDs show a maximum EQE of 22.29% and an average EQE of 20.44 ± 0.73% based on a statistical analysis of 50 devices, exhibiting excellent reproducibility. The work provides better insights into controlling crystal growth and defect passivation via polymer‐assisted methods for efficient Pero‐LEDs. [ABSTRACT FROM AUTHOR]

Perovskite light‐emitting diodes (Pero‐LEDs) have attracted significant attention due to their high color purity and solution processing, presenting potential applications for next‐generation solid‐state lighting and displays. Continued materials development has shown that passivating non‐radiative defects can improve device performance. In theory, CsPbBr3&Cs4PbBr6 should be a model emitter for Pero‐LEDs, as its lattice matching provides ideal passivation and efficient exciton confinement. However, the low charge transport of Cs4PbBr6 has so far hindered device performance. Herein, a dual‐phase regulation method to grow a CsPbBr3&Cs4PbBr6 perovskite layer that enables efficient electrical injection is developed. This leads to the realization that Pero‐LEDs with a maximum EQE of 22.3% with a luminance of 10,050 cd m−2, and the devices show a T50 of 59 h at 130 cd m−2. [ABSTRACT FROM AUTHOR]

It is challenging to passivate defects that are buried in the depth of perovskite films; most of the reported passivation methods cannot reach the deep defects. Herein, methanol is adopted as a dual‐functional reagent to not only act as a solvent but also help the dissolved ions penetrate the depth of perovskite films. By treating the as‐prepared perovskite films with CsBr/methanol solution, Br− ions can react with the undercoordinated Pb2+, and Cs+ ions can fill in the cation vacancies. This strategy enables surface and bulk defects passivation to be achieved simultaneously. The nonradiative recombination of the double‐passivated devices is significantly suppressed and the migration of charged defects is remarkably hindered. As a result, an improved power conversion efficiency of 19.5% and an open‐circuit voltage of 1.183 V is achieved. Moreover, the passivated device can retain ≈80% of the initial efficiency after working for 500 h at maximum power point under 1‐sun illumination, whereas the pristine device reaches 80% of the initial efficiency after only 90 h. This work demonstrates that surface and bulk defects passivation is critical to improve the efficiency and long‐term operational stability of the perovskite solar cells. [ABSTRACT FROM AUTHOR]

Fullerene derivatives, especially after purposely functionalization, have potential to efficiently passivate interfacial defects between perovskites and electron transport layers. In this work, a fullerene derivative with amine functional group, 2,5‐diphenyl C60 fulleropyrrolidine (DPC60), is synthesized and employed as an interfacial layer between a perovskite and SnO2 in planar perovskite solar cells (PSCs). The cis‐configuration and the specific amine group of DPC60 effectively enhance the chemical interaction between the perovskite and DPC60, promoting the passivation of perovskite defects at the interface. The suitable energy level of DPC60 and the improved conductivity of the SnO2/DPC60 film facilitate the electron extraction from the perovskite layer. As a result, PSCs incorporated with DPC60 reach a PCE of 20.4% with high reproducibility, which is much higher than that of the bare SnO2 based devices (18.8%). Furthermore, the hydrophobic DPC60 layer suppresses heterogeneous nucleation and improves the crystallinity of the perovskite film, resulting in better device stability, retaining 82% of its initial efficiency after 200 h of 1 sun continuous irradiation and thermal ageing (55 ± 5 °C). [ABSTRACT FROM AUTHOR]