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Superconducting nanowire single photon detectors (SNSPDs) are the detectors of choice in quantum optics applications due to their leading performances. To exploit their performances, great care must be devoted to efficiently couple light from a single-mode fiber to their small area, ∼10 μm in size, at cryogenic temperature (∼3K). In addition, to further improve the SNSPDs functionality, implementing the photon number resolving capability, arrays of spatially multiplexed SNSPDs, must be realized. We will discuss our results obtained for these two approaches.

We present a 72 × 60, angle-sensitive single photon avalanche diode (A-SPAD) array for lens-less 3D fluorescence lifetime imaging. An A-SPAD pixel consists of (1) a SPAD to provide precise photon arrival time where a time-resolved operation is utilized to avoid stimulus-induced saturation, and (2) integrated diffraction gratings on top of the SPAD to extract incident angles of the incoming light. The combination enables mapping of fluorescent sources with different lifetimes in 3D space down to micrometer scale. Futhermore, the chip presented herein integrates pixel-level counters to reduce output data-rate and to enable a precise timing control. The array is implemented in standard 180 nm complementary metal-oxide-semiconductor (CMOS) technology and characterized without any post-processing.

Several important advances were reported in single-photon detectors and photon-number-resolving detectors in 2011. New materials with smaller superconducting gaps were demonstrated for superconducting nanowire single-photon detectors (SNSPDs) that led to improved signal-to-noise ratios and infrared performance. Faster superconducting transition edge sensors (TESs) were demonstrated by using normal metal heat sinks. Both TESs and SNSPDs were evanescently coupled with waveguides as a step toward demonstrating quantum photonic integrated circuits. Photon-number resolution has been the goal in several demonstrations using semiconductor detectors, and recent results suggest a potential convergence of Geiger-mode and linear-mode avalanche diodes in exhibiting the high-gain, low-noise analog behavior necessary to reach this goal. There has also been progress focused on additional trends in single-photon avalanche diodes (SPADs) for high- rate counting and detector array scaling.

We propose and analyze a new method for single-photon wavelength up-conversion using optical coupling between a primary infrared (IR) single-photon avalanche diode (SPAD) and a complementary metal oxide semiconductor (CMOS) silicon SPAD, which are fused through a silicon dioxide passivation layer. A primary IR photon induces an avalanche in the IR SPAD. The photons produced by hot-carrier recombination are subsequently sensed by the silicon SPAD, thus, allowing for on-die data processing. Because the devices are fused through their passivation layers, lattice mismatch issues between the semiconductor materials are avoided. We develop a model for calculating the conversion efficiency of the device, and use realistic device parameters to estimate up to 97% upconversion efficiency and 33% system efficiency, limited by the IR detector alone. The new scheme offers a low-cost means to manufacture dense IR-SPAD arrays, while significantly reducing their afterpulsing. We show that this high-speed compact method for upconverting IR photons is feasible and efficient.

We report here on the state of our fabrication process for Superconducting Single Photon Detectors (SSPDs). We have fabricated submicrometer SSPD structures by electron beam lithography using very thin (10 nm) NbN films deposited by DC-magnetron sputtering on different substrates and at room substrate temperature. The structures show a fast optical response (risetime < 500 ps limited by readout electronics) and interesting self-resetting features.

In this paper we report on a 32/spl times/32 optical imager based on single photon avalanche diodes integrated in CMOS technology. The maximum measured dynamic range is 120dB and the minimum noise equivalent intensity is 1.3 /spl times/ 10/sup -3/ lx. The minimum integration time per pixel is 4 /spl mu/s. The output of each pixel is digital, thereby requiring no complex read-out circuitry, no amplification, no sample and hold, and no ADC.

The design and characterization of an imaging system is presented for depth information capture of arbitrary three-dimensional (3-D) objects. The core of the system is an array of 32 /spl times/ 32 rangefinding pixels that independently measure the time-of-flight of a ray of light as it is reflected back from the objects in a scene. A single cone of pulsed laser light illuminates the scene, thus no complex mechanical scanning or expensive optical equipment are needed. Millimetric depth accuracies can be reached thanks to the rangefinder's optical detectors that enable picosecond time discrimination. The detectors, based on a single photon avalanche diode operating in Geiger mode, utilize avalanche multiplication to enhance light detection. On-pixel high-speed electrical amplification can therefore be eliminated, thus greatly simplifying the array and potentially reducing its power dissipation. Optical power requirements on the light source can also be significantly relaxed, due to the array's sensitivity to single photon events. A number of standard performance measurements, conducted on the imager, are discussed in the paper. The 3-D imaging system was also tested on real 3-D subjects, including human facial models, demonstrating the suitability of the approach.