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In this work, we designed and fabricated a dual-mode switch based on triple-waveguide couplers and two thermal phase shifters, and demonstrated the first silicon-integrated mode division multiplexing (MDM) switching network for $2-\mu \text{m}$ waveband. The proposed dual-mode switch shows $\mu \text{s}$ rising time and $13.2-\mu \text{s}$ falling time, with switching power of 19.2 mW. High speed on-chip MDM routing of $2\times 60$ Gbps signal was experimentally demonstrated using the proposed 2- $\mu \text{m}$ MDM switching network, drawing the promising prospect for the future photonic integration and high-speed MDM networking at 2- $\mu \text{m}$ waveband.

Hollow-core fiber (HCF) has been attracting broad interests in recent decades, and has extended the communication window to longer wavelength, 2 micron. In this article, we present a demonstration of low-latency HCF short-reach optical interconnection at 2 micron, achieving a high single-lane speed of 100 Gbps. High physical speed (near vacuum-light-speed) and high information speed (100-Gbps) optical interconnection with 100-m transmission distance is experimentally achieved with error-free performance. Probabilistically shaped discrete multi-tone (PS-DMT) modulation with entropy loading is employed to accommodate the deteriorated frequency response caused by the mode dispersion in HCF. Compared with conventional solid-core fiber (SCF), HCF contributes 30.95% (1.5-μs per kilometer) latency reduction for the physical link. The system level latency reduction is 28% for 1-km interconnection distance (11% for 100-m), with respect to a microsecond-scale switching network for typical datacenter applications. This work substantially leaps over the 100G milestone of 2-micron HCF optical interconnection, and shows the potentiality with lower latency and further higher capacity.

Chromatic dispersion engineering of photonic waveguide is of great importance for Photonic Integrated Circuit in broad applications, including on-chip CD compensation, supercontinuum generation, Kerr-comb generation, micro resonator and mode-locked laser. Linear propagation behavior and nonlinear effects of the light wave can be manipulated by engineering CD, in order to manipulate the temporal shape and frequency spectrum. Therefore, agile shapes of dispersion profiles, including typically wideband flat dispersion, are highly desired among various applications. In this study, we demonstrate a novel method for agile dispersion engineering of integrated photonic waveguide. Based on a horizontal double-slot structure, we obtained agile dispersion shapes, including broadband low dispersion, constant dispersion and slope-maintained linear dispersion. The proposed inverse design method is objectively-motivated and automation-supported. Dispersion in the range of 0–1.5 ps/(nm·km) for 861-nm bandwidth has been achieved, which shows superior performance for broadband low dispersion. Numerical simulation of the Kerr frequency comb was carried out utilizing the obtained dispersion shapes and a comb spectrum for 1068-nm bandwidth with a 20-dB power variation was generated. Significant potential for integrated photonic design automation can be expected.

Silicon micro-ring modulator with 18-GHz electro-optic bandwidth and

Optical signaling without a high voltage driver for electric-optic modulation is in high demand to reduce power consumption, packaging complexity, and cost. In this work, we propose and experimentally demonstrate a silicon mode-loop Mach–Zehnder modulator (ML-MZM) with record-high modulation efficiency. We used a mode-loop structure to recycle light twice in the phase shifter. With an L-shaped PN junction, a comparably large overlap between the PN junction and optical modes of both TE 0 and TE 1 was achieved to lower the driving voltage or decrease the photonic device size. Proof-of-concept high-efficiency modulation with low V π L of 0.37 V · cm was obtained. Subvoltage V π can be realized with a millimeter’s length phase shifter by this scheme, which makes the realization of CMOS-compatible driverless modulation highly possible. 40 Gb/s signaling with a bit error rate below the 7% forward-error-correction threshold was then demonstrated with the fabricated ML-MZM, indicating great potential for high-speed optical communication.

Grating coupler and mode converter working at 2-micron waveband were fabricated on the 600-nm-thick As2S3-on-oxide platform. Both simulation and experiment results indicate that 2-micron As2S3 components has broadened wavelength bandwidth and improved fabrication tolerance.

2-micron waveband optical interconnection at record-high-speed of 100 Gbps/lane with 100-m hollow-core photonic bandgap fiber transmission is achieved. Mode-dependent bandwidth restriction is well optimized by probabilistically shaped discrete multi-tone (PS-DMT) modulation.

We experimentally achieved the highest single-lane optical interconnection speed of 90 Gbps at 2-micron waveband, based on external modulation of discrete multi-tone (DMT), with BER under the FEC limit after 100 -m fiber transmission.

Recently, 2-μm wave band has gained increasing interest due to its potential application for next-generation optical communication. But the development of 2-μm optical communications is substantially hampered by the modulation speed due to the device bandwidth constraints. Thus, a high-speed modulator is highly demanded at 2 μm. Motivated by this prospect, we demonstrate a high-speed silicon Mach–Zehnder modulator for a 2-μm wave band. The device is configured as a single-ended push–pull structure with waveguide electrorefraction via the free carrier plasma effect. The modulator was fabricated via a multiproject wafer shuttle run at a commercial silicon photonic foundry. The modulation efficiency of a single arm is measured to be 1.6 V · cm . The high-speed characterization is also performed, and the modulation speed can reach 80 Gbit/s with 4-level pulse amplitude modulation (PAM-4) formats.

In this work, on-chip chalcogenide glass photonic integrations with several fundamental photonic building blocks are designed and fabricated based on the As 2 S 3 platform for improved 2 μm optical interconnection, achieving a broadened wavelength bandwidth and improved fabrication tolerance. A 600 nm thick As 2 S 3 strip waveguide has low propagation loss of 1.447 dB/cm at 2 μm. Broadband vertical coupling is realized by a grating coupler with 4.3 dB coupling loss. A Bragg grating filter, power splitter, Mach–Zander interferometer, and mode converter for on-chip mode division multiplexing (MDM) are also reported at 2 μm with reliable performances. Finally, a record high MDM optical interconnection capacity of 3 × 80 Gbps at 2 μm is experimentally demonstrated based on the proposed As 2 S 3 chip, drawing promising prospects for future photonic integration and high-speed interconnection at the 2 μm waveband.

Luminescence investigations of ZnO films covered by Ag films using different pumping sources revealed thatinfluence of Ag films on the intensity of ZnO films luminescence depends on excitation conditions and Ag covering quality.