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Mie-resonant dielectric metasurfaces are excellent candidates for both fundamental studies related to light-matter interactions and for numerous applications ranging from holography to sensing to nonlinear optics. To date, however, most applications using Mie metasurfaces utilize only weak light-matter interaction. Here, we go beyond the weak coupling regime and demonstrate for the first time strong polaritonic coupling between Mie photonic modes and intersubband (ISB) transitions in semiconductor heterostructures. Furthermore, along with demonstrating ISB polaritons with Rabi splitting as large as 10%, we also demonstrate the ability to tailor the strength of strong coupling by engineering either the semiconductor heterostructure or the photonic mode of the resonators. Unlike previous plasmonic-based works, our new all-dielectric metasurface approach to generate ISB polaritons is free from ohmic losses and has high optical damage thresholds, thereby making it ideal for creating novel and compact mid-infrared light sources based on nonlinear optics.

Controlling the permittivity of materials enables control over the amplitude, phase and polarization of light interacting with them. Tailorable and tunable transparent conducting oxides have applications in optical switching, beam steering, imaging, sensing, and spectroscopy. In this work, we experimentally demonstrate wide tailoring and tuning of the optical properties of oxides to achieve fast switching with large modulation depths. In cadmium oxide, the permittivity and the epsilon-near-zero points can be tailored via yttrium doping to achieve large, ENZ-enhanced mid-IR reflectance modulation. In zinc oxide, the permittivity is tuned by interband pumping, achieving large reflectance modulation in the telecom regime. With aluminum-doped zinc oxide, we demonstrate tailorable Berreman-type absorbers that can achieve ultrafast switching in the telecom frequencies. Our work will pave the way to practical optical switching spanning the telecom to the mid-infrared wavelength regimes.

We demonstrate an extremely nonlinear all-dielectric metasurface that employs intersubband polaritons to achieve a second-harmonic conversion coefficient of 3 mW/W2, and second-harmonic power conversion efficiency of 0.045% at a modest pump intensity of 6.7 kW/cm2.

We demonstrate significant epsilon-near-zero point shifts (11.3 pm to 5.3 pm), extraordinarily large (135%) optically-induced reflection modulation with picosecond response times, and carrier relaxation time-engineering in cadmium oxide via Yttrium doping.

We experimentally demonstrate a metasurface that supports tailorable polaritons arising from strong coupling between Mie modes of dielectric nanoresonators and intersubband transitions of semiconductor quantum wells that are embedded inside the resonator.

Epsilon-near-zero materials provide a new path for tailoring light-matter interactions at the nanoscale. In this paper, we analyze a compact electroabsorption modulator based on epsilon-near-zero confinement in transparent conducting oxide films. The nonresonant modulator operates through field-effect carrier density tuning. We compare the performance of modulators composed of two different conducting oxides, namely, indium oxide (In2O3 ) and cadmium oxide (CdO), and show that better modulation performance is achieved when using high-mobility (i.e., low loss) epsilon-near-zero materials such as CdO. In particular, we show that nonresonant electroabsorption modulators with submicron lengths and greater than 5 dB extinction ratios may be achieved through the proper selection of high-mobility transparent conducting oxides, opening a path for device miniaturization and increased modulation depth.

Ultrafast control of the polarization state of light may enable a plethora of applications in optics, chemistry and biology. However, conventional polarizing elements, such as polarizers and waveplates, are either static or possess only gigahertz switching speeds. Here, with the aid of high-mobility indium-doped cadmium oxide (CdO) as the gateway plasmonic material, we realize a high-quality factor Berreman-type perfect absorber at a wavelength of 2.08 μm. On sub-bandgap optical pumping, the perfect absorption resonance strongly redshifts because of the transient increase of the ensemble-averaged effective electron mass of CdO, which leads to an absolute change in the p-polarized reflectance from 1.0 to 86.3%. By combining the exceedingly high modulation depth with the polarization selectivity of the perfect absorber, we experimentally demonstrate a reflective polarizer with a polarization extinction ratio of 91 that can be switched on and off within 800 fs. Indium-doped cadmium oxide performs polarization switching on a subpicosecond timescale.

Metamaterials research has developed perfect absorbers from microwave to optical frequencies, mainly featuring planar metamaterials, also referred to as metasurfaces. In this study, we investigated vertically oriented metamaterials, which make use of the entire three-dimensional space, as a new avenue to widen the spectral absorption band in the infrared regime between 20 and 40 THz. Vertically oriented metamaterials, such as those simulated in this work, can be experimentally realized through membrane projection lithography, which allows a single unit cell to be decorated with multiple resonators by exploiting the vertical dimension. In particular, we analyzed the cases of a unit cell containing a single vertical split-ring resonator (VSRR), a single planar split-ring resonator (PSRR), and both a VSRR and PSRR to explore intra-cell coupling between resonators. We show that the additional degrees of freedom enabled by placing multiple resonators in a unit cell lead to novel ways of achieving omnidirectional super absorption. Our results provide an innovative approach for controlling and designing engineered nanostructures.

We experimentally demonstrate strong coupling between Mie modes of dielectric resonators in a metasurface and intersubband transitions in semiconductor quantum wells that are embedded inside the resonator. The ability to achieve such light-matter coupling creates the possibility to realize ultrathin nonlinear optical devices that are free from complex phase matching requirements and have very high nonlinear conversion efficiencies.

We demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron–phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to more complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. The platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.

We present a new approach to dielectric metasurface design that relies on a single resonator per unit cell and produces robust, high quality factor Fano resonances. Our approach utilizes symmetry breaking of highly symmetric resonator geometries, such as cubes, to induce couplings between the otherwise orthogonal resonator modes. In particular, we design perturbations that couple “bright” dipole modes to “dark” dipole modes whose radiative decay is suppressed by local field effects in the array. Our approach is widely scalable from the near-infrared to radio frequencies. We first unravel the Fano resonance behavior through numerical simulations of a germanium resonator-based metasurface that achieves a quality factor of ∼1300 at ∼10.8 μm. Then, we present two experimental demonstrations operating in the near-infrared (∼1 μm): a silicon-based implementation that achieves a quality factor of ∼350; and a gallium arsenide-based structure that achieves a quality factor of ∼600, the highest near-infrared qualit...

Epsilon-near-zero (ENZ) modes provide a new path for tailoring light–matter interactions at the nanoscale. In this paper, we analyze a strongly coupled system at near-infrared frequencies comprising plasmonic metamaterial resonators and ENZ modes supported by degenerately doped semiconductor nanolayers. In strongly coupled systems that combine optical cavities and intersubband transitions, the polariton splitting (i.e., the ratio of Rabi frequency to bare cavity frequency) scales with the square root of the wavelength, thus favoring the long-wavelength regime. In contrast, we observe that the polariton splitting in ENZ/metamaterial resonator systems increases linearly with the thickness of the nanolayer supporting the ENZ modes. In this work, we employ an indium-tin-oxide nanolayer and observe a large experimental polariton splitting of approximately 30% in the near-infrared. This approach opens up many promising applications, including nonlinear optical components and tunable optical filters based on con...

Three-dimensional (3D) metafilms composed of periodic arrays containing single and multiple micrometer-scale vertical split ring resonators per unit cell were fabricated using membrane projection lithography. In contrast to planar and stacked planar structures such as cut wire pairs and fishnet structures, these 3D metafilms have a thickness t ~λd/4, allowing for classical thin film effects in the long wavelength limit. The infrared specular far-field scattering response was measured for metafilms containing one and two resonators per unit cell, and compared to numerical simulations. Excellent agreement in the frequency region below the onset of diffractive scattering was obtained. The metafilms demonstrate strong bi-anisotropic polarization dependence. Further, we show that for 3D metafilms, just as in solids, complex unit cells with multiple atoms (inclusions) per unit cell possess a richer set of excitation mechanisms. The highlight of these new coupling mechanisms is the excitation of the 3D analog to the 2D cut-wire-pair magnetic response.

Coupling of metasurfaces to intersubband transitions (ISTs) in semiconductor quantum wells (QWs) has been extensively studied for various applications ranging from generating giant nonlinear optical response to designing tunable metasurfaces for applications such as ultrafast spatial optical modulators and voltage tunable filters. In this work, we experimentally demonstrate a fundamentally new approach of actively controlling the coupling of ISTs in QWs to a metasurface for voltage tuning its optical response. Unlike previous approaches, we use voltage-controlled quantum tunneling to control the carrier concentration in the QWs for turning on/off the ISTs. We design a multi-quantum well structure consisting of four undoped InGaAs wells with AlInAs barriers grown on top of a highly doped InGaAs layer that acts as an electron reservoir. The heterostructure is optimized such that the first IST in all the wells is at 11µm. A complementary gold metasurface with dipole resonances at 11µm is fabricated on top of the QW structure. We designed the heterostructure such that by applying a bias of 1V, the energy bands of all the QWs get aligned simultaneously, leading to the occupation of the ground state of all the QWs via quantum tunneling of the electrons from the electron reservoir. The ISTs which were turned off due to negligible electron density gets turned on at 1V, and this leads to coupling between the ISTs and the dipoles resonances of the metasurface. The voltage induced coupling leads to reflectance modulation which we confirmed experimentally by rapid scan double modulation FTIR measurements.

Metasurfaces have been investigated for various applications ranging from beam steering, focusing, to polarization conversion. Along with passive metasurfaces, significant efforts are also being made to design metasurfaces with tunable optical response. Among various approaches, voltage tuning is of particular interest because it creates the possibility of integration with electronics. In this work, we demonstrate voltage tuning of reflectance from a complementary metasurface strongly coupled to an epsilon-near-zero (ENZ) mode in an ultrathin semiconductor layer. Our approach involves electrically controlling the carrier concentration of the ENZ layer to modulate the polaritonic coupling between the dipole resonances of the metasurface and the ENZ mode for modulating the reflectance of the metasurface. The hybrid structure we fabricate is similar to MOSCAP configuration where the complementary metasurface offers a continuous gold top layer for biasing and positive/negative bias to the metasurface leads to accumulation/depletion of carriers in the ENZ layer beneath it. We optimized our structure by using InGaAs as the ENZ material because of its high mobility and low effective mass. This allowed us to reduce the doping requirement and thereby reduce the ionized impurity scattering as well as the reverse bias required to deplete the ENZ layer. For low leakage and efficient modulation of carrier density, we used Hafnia as the gate dielectric. We further added a reflecting backplane below the ENZ layer to enhance the interaction and by applying bias, we achieved spectral shifts of 500 nm and amplitude modulation of 11% of one of the polariton branches at 14 µm.

We demonstrate thinned resonant longwave infrared detectors with quantum efficiencies of over 60% in the longwave infrared. This improvement over unthinned detectors is made possible by a nanoantenna that confines the incident optical energy in a reduced volume compared to traditional detector architectures.

We experimentally demonstrate a novel approach of using coupling between a leaky mode resonance and intersubband transitions in semiconductor quantum wells to realize a hybrid dielectric-semiconductor metasurface with high second-harmonic conversion efficiency and increased bandwidth.

We experimentally demonstrate spectral tuning and amplitude modulation of reflectance at long infrared wavelengths using a complementary metasurface strongly coupled to an epsilon-near-zero (ENZ) mode in an ultrathin InGaAs layer with a reflecting backplane.

We demonstrate a fundamentally new approach of using voltage controlled quantum tunneling for modulating optical response of a metasurface coupled to intersubband transitions in semiconductor quantum wells.

We demonstrate active tuning of high-Q dielectric metasurfaces by embedding asymmetric silicon meta-atoms in liquid crystals, thus controlling the relative refractive index by heating. Spectral tuning of more than three resonance widths is achieved.

The noise performance of infrared detectors can be improved through utilization of thinner detector layers which reduces thermal and generation-recombination noise currents. However, some infrared detector materials suffer from weak optical absorption and thinning the detector layer can lead to incomplete absorption of the incoming infrared photons which reduces detector quantum efficiency. Here, we show how subwavelength metallic nanoantennas can be used to boost the efficiency of photon absorption for thin detector layers, thereby achieving overall enhanced detector performance.

We examine integration of a patterned metal nanoantenna (or metasurface) directly onto long-wave infrared detectors. These structures show significantly improved external quantum efficiency compared to their traditional counterparts. We will show simulation and experimental results.

Using a high-electron-mobility cadmium oxide perfect absorber and intraband optical pumping, we experimentally demonstrate a reflective polarizer with a polarization extinction ratio of 91 that can be switched on and off within 800 fs.

We demonstrate high-speed operation of ultracompact electroabsorption modulators based on epsilon-near-zero confinement in indium oxide (In 2 O 3 ) on silicon using field-effect carrier density tuning. Additionally, we discuss strategies to enhance modulator performance and reduce confinement-related losses by introducing high-mobility conducting oxides such as cadmium oxide (CdO).

High-quality infrared focal plane arrays (FPAs) are used in many satellite, astronomical, and terrestrial applications. These applications require highly-sensitive, low-noise FPAs, and therefore do not benefit from advances made in low-cost thermal imagers where reducing cost and enabling high-temperature operation drive device development. Infrared detectors used in FPAs have been made for decades from alloys of mercury cadmium telluride (MCT). These infrared detectors are nearing the believed limit of their performance. This limit, known in the infrared detector community as Rule 07, dictates the dark current floor for MCT detectors, in their traditional architecture, for a given temperature and cutoff wavelength. To overcome the bounds imposed by Rule 07, many groups are working on detector compounds other than MCT. We focus on detectors employing III-V-based gallium-free In As Sb superlattice active regions while also changing the basic architecture of the pixel to improve signal-to-noise. Our architecture relies on a resonant, metallic, subwavelength nanoantenna patterned on the absorber surface, in combination with a Fabry-Perot cavity, to couple the incoming radiation into tightly confined modes near the nanoantenna. This confinement of the incident energy in a thin layer allows us to greatly reduce the volume of the absorbing layer to a fraction of the free-space wavelength, yielding a corresponding reduction in dark current from spontaneously generated electron-hole pairs in the absorber material. This architecture is detector material agnostic and could be applied to MCT detector structures as well, although we focus on using superlattice antimonide-based detector materials. This detector concept has been applied to both mid-wave (3–5 μm) and longwave (8–12 μm) infrared detectors and absorbers. Here we examine long-wave devices, as these detectors currently have a larger gap between desired device performance and that of currently existing detectors. The measured structures show an external quantum efficiency exceeding 50%. We present a comparison of the modeled and measured photoresponse of these detectors and compare these detectors to currently available commercial detectors using relevant metrics such as external quantum efficiency. We also discuss modeling of crosstalk between adjacent pixels and its influence on the potential for a dual-wavelength detector. Finally, we evaluate potential advances in these detectors that may occur in the near future.

We experimentally demonstrate high-contrast, ultrafast switching of infrared light at 2.1 μm via intraband pumping of a high quality factor perfect absorber made from a highly doped cadmium oxide thin film.

We demonstrate the active tuning of all-dielectric metasurfaces exhibiting high-quality factor (high-Q) resonances. The active control is provided by embedding the asymmetric silicon meta-atoms with liquid crystals, which allows the relative index of refraction to be controlled through heating. It is found that high quality factor resonances ($Q=270\pm30$) can be tuned over more than three resonance widths. Our results demonstrate the feasibility of using all-dielectric metasurfaces to construct tunable narrow-band filters., Comment: 4 pages, 6 figures

We report the first high-speed demonstration of a compact electroabsorption modulator based on epsilon-near-zero confinement in conducting oxide films. The non-resonant, 4μm-long device operates simultaneously over the entire C band through field-effect carrier density tuning.

We study the role of carrier mobility in transparent conducting oxides integrated into epsilon-near-zero modulators. High-mobility materials including CdO enable sub-micron length electroabsorption modulators through >4dB/µm extinction ratios.

We present the design, realization, and characterization of optical strong light–matter coupling between intersubband transitions within a semiconductor heterostructures and planar metamaterials in the near-infrared spectral range. The strong light–matter coupling entity consists of a III-nitride intersubband superlattice heterostructure, providing a two-level system with a transition energy of ∼0.8 eV (λ ∼1.55 μm) and a planar “dogbone” metamaterial structure. As the bare metamaterial resonance frequency is varied across the intersubband resonance, a clear anticrossing behavior is observed in the frequency domain. This strongly coupled entity could enable the realization of electrically tunable optical filters, a new class of efficient nonlinear optical materials, or intersubband-based light-emitting diodes.

Metamaterial dielectric resonators represent a promising path toward low-loss metamaterials at optical frequencies. In this paper we utilize perturbations of high symmetry resonator geometries, such as cubes, either to overlap the electric and magnetic dipole resonances, thereby enabling directional scattering and Huygens' metasurfaces, or to induce couplings between the otherwise orthogonal resonator modes to achieve high-quality factor Fano resonances. Our results are fully scalable across any frequency bands where high-permittivity dielectric materials are available, including microwave, THz, and infrared frequencies.

We experimentally demonstrated an epsilon-near-zero (ENZ) mode in an n-doped GaAs layer at 0.8 THz and study its ultrafast dynamics using optical pump terahertz probe spectroscopy. Notable plasmon damping was observed upon optical pumping.

The ability to control the light-matter interaction with an external stimulus is a very active area of research since it creates exciting new opportunities for designing optoelectronic devices. Recently, plasmonic metasurfaces have proven to be suitable candidates for achieving a strong light-matter interaction with various types of optical transitions, including intersubband transitions (ISTs) in semiconductor quantum wells (QWs). For voltage modulation of the light-matter interaction, plasmonic metasurfaces coupled to ISTs offer unique advantages since the parameters determining the strength of the interaction can be independently engineered. In this work, we report a proof-of-concept demonstration of a new approach to voltage-tune the coupling between ISTs in QWs and a plasmonic metasurface. In contrast to previous approaches, the IST strength is here modified via control of the electron populations in QWs located in the near field of the metasurface. By turning on and off the ISTs in the semiconductor QWs, we observe a modulation of the optical response of the IST coupled metasurface due to modulation of the coupled light-matter states. Because of the electrostatic design, our device exhibits an extremely low leakage current of ∼6 pA at a maximum operating bias of +1 V and therefore very low power dissipation. Our approach provides a new direction for designing voltage-tunable metasurface-based optical modulators.

Improving the sensitivity of infrared detectors is an essential step for future applications, including satellite- and terrestrial-based systems. We investigate nanoantenna-enabled detectors (NEDs) in the infrared, where the nanoantenna arrays play a fundamental role in enhancing the level of absorption within the active material of a photodetector. The design and optimization of nanoantenna-enabled detectors via full-wave simulations is a challenging task given the large parameter space to be explored. Here, we present a fast and accurate fully analytic circuit model of patch-based NEDs. This model allows for the inclusion of real metals, realistic patch thicknesses, non-absorbing spacer layers, the active detector layer, and absorption due to higher-order evanescent modes of the metallic array. We apply the circuit model to the design of NED devices based on Type II superlattice absorbers, and show that we can achieve absorption of ∼70% of the incoming energy in subwavelength (∼λ/5) absorber layers. The accuracy of the circuit model is verified against full-wave simulations, establishing this model as an efficient design tool to quickly and accurately optimize NED structures.

Considering the power constrained scaling of silicon complementary metal-oxide-semiconductor technology, the use of high mobility III–V compound semiconductors such as In0.53Ga0.47As in conjunction with high-κ dielectrics is becoming a promising option for future n-type metal-oxide-semiconductor field-effect-transistors. Development of low dissipation field-effect tunable III–V based photonic devices integrated with high-κ dielectrics is therefore very appealing from a technological perspective. In this work, we present an experimental realization of a monolithically integrable, field-effect-tunable, III–V hybrid metasurface operating at long-wave-infrared spectral bands. Our device relies on strong light-matter coupling between epsilon-near-zero (ENZ) modes of an ultra-thin In0.53Ga0.47As layer and the dipole resonances of a complementary plasmonic metasurface. The tuning mechanism of our device is based on field-effect modulation, where we modulate the coupling between the ENZ mode and the metasurface by modifying the carrier density in the ENZ layer using an external bias voltage. Modulating the bias voltage between ±2 V, we deplete and accumulate carriers in the ENZ layer, which result in spectrally tuning the eigenfrequency of the upper polariton branch at 13 μm by 480 nm and modulating the reflectance by 15%, all with leakage current densities less than 1 μA/cm2. Our wavelength scalable approach demonstrates the possibility of designing on-chip voltage-tunable filters compatible with III–V based focal plane arrays at mid- and long-wave-infrared wavelengths.

Optical communication systems increasingly require electro-optical modulators that deliver high modulation speeds across a large optical bandwidth with a small device footprint and a CMOS-compatible fabrication process. Although silicon photonic modulators based on transparent conducting oxides (TCOs) have shown promise for delivering on these requirements, modulation speeds to date have been limited. Here, we describe the design, fabrication, and performance of a fast, compact electroabsorption modulator based on TCOs. The modulator works by using bias voltage to increase the carrier density in the conducting oxide, which changes the permittivity and hence optical attenuation by almost 10 dB. Under bias, light is tightly confined to the conducting oxide layer through nonresonant epsilon-near-zero (ENZ) effects, which enable modulation over a broad range of wavelengths in the telecommunications band. Our approach features simple integration with passive silicon waveguides, the use of stable inorganic materials, and the ability to modulate both transverse electric and magnetic polarizations with the same device design. Using a 4-μm-long modulator and a drive voltage of 2 Vpp, we demonstrate digital modulation at rates of 2.5 Gb/s. We report broadband operation with a 6.5 dB extinction ratio across the 1530–1590 nm band and a 10 dB insertion loss. This work verifies that high-speed ENZ devices can be created using conducting oxide materials and paves the way for additional technology development that could have a broad impact on future optical communications systems.

Engineering collective excitations such as plasmons and polaritons provides access to exotic optical properties. This study reports semiconductor nanostructures with coupled surface modes that interact with multiple resonant dipoles, yielding double and triple polariton branches in the system's response. This produces useful and tunable properties with the flexibility to enable low-voltage tunable filters, light-emitting diodes, and efficient nonlinear composite materials.

Thin layers of semiconductors where the permittivity crosses zero, support a particular polariton mode called epsilon-near-zero (ENZ) mode. This zero crossing can be obtained near optical phonon resonances in dielectrics or the plasma frequency in doped semiconductors. The coupling of metamaterial resonators to these ENZ modes leads to particularly large Rabi splittings. ENZ layers can be added to metamaterial-based strongly coupled systems to increase this coupling even further. I will discuss several examples of these coupled systems that include metasurfaces, phonons, intersubband transitions and ENZ modes.

Coherent superposition of light from subwavelength sources is an attractive prospect for the manipulation of the direction, shape and polarization of optical beams. This phenomenon constitutes the basis of phased arrays, commonly used at microwave and radio frequencies. Here we propose a new concept for phased-array sources at infrared frequencies based on metamaterial nanocavities coupled to a highly nonlinear semiconductor heterostructure. Optical pumping of the nanocavity induces a localized, phase-locked, nonlinear resonant polarization that acts as a source feed for a higher-order resonance of the nanocavity. Varying the nanocavity design enables the production of beams with arbitrary shape and polarization. As an example, we demonstrate two second harmonic phased-array sources that perform two optical functions at the second harmonic wavelength (∼5 μm): a beam splitter and a polarizing beam splitter. Proper design of the nanocavity and nonlinear heterostructure will enable such phased arrays to span most of the infrared spectrum., Controlling light at scales smaller than its wavelength is attractive to manipulate light using small device footprints. Here, the authors propose a scheme to modify light on such small scales using a combination of metamaterial nanocavities coupled to nonlinear semiconductor heterostructures.

Metallic nanocavities with deep subwavelength mode volumes can lead to dramatic changes in the behavior of emitters placed in their vicinity. This collocation and interaction often leads to strong coupling. Here, we present for the first time experimental evidence that the Rabi splitting is directly proportional to the electrostatic capacitance associated with the metallic nanocavity. The system analyzed consists of different metamaterial geometries with the same resonance wavelength coupled to intersubband transitions in quantum wells.

We demonstrate efficient third harmonic generation from a 21.6nm-thick indium tin oxide film on glass substrate for a pump fundamental wavelength of 1350nm using the field enhancement properties of optical modes supported by epsilon-near-zero media.

Strongly coupling metallic nanoresonators with specially designed intersubband-transitions in quantum-wells results in efficient, saturation-limited second-harmonic (SH) generation. This method also grants full control over the polarization and phase-front of the emitted SH radiation.

We use epsilon-near-zero modes in semiconductor nanolayers to design a system whose spectral properties are controlled by their interaction with multi-dipole resonances. This design flexibility renders our platform attractive for efficient nonlinear composite materials.

We introduce the concept of array-induced Fano resonances in two-dimensional periodic arrays (metasurfaces) of plasmonic nanoparticle clusters as a mean to generate very narrow resonances despite the presence of metallic losses. We find that array-induced Fano resonances have the potential to be narrower than isolated-cluster-induced ones, and may lead to even larger field enhancements. We provide two representative examples: (i) a metasurface made of circular nanoclusters; (ii) a metasurface made of linear trimers. However, in principle the concept here introduced can be empirically extended to any cluster size and configuration. Application of array-induced Fano resonances include the improvement of sensor devices, for example.

Dielectric resonators represent a promising path toward low loss metamaterials at optical frequencies. In this paper we describe a methodology for tailoring the design of metamaterial resonators as well as recovering their polarizibilies. Examples are provided spanning the range from an isolated resonator with designed scattering properties, to two- and three-dimensional metamaterial arrays exhibiting artificial magnetic properties.

We present the design, realization and characterization of strong coupling between an intersubband transition and a monolithic metamaterial nanocavity in the mid-infrared spectral range. We use a ground plane in conjunction with a planar metamaterial resonator for full three-dimensional confinement of the optical mode. This reduces the mode volume by a factor of 1.9 compared to a conventional metamaterial resonator while maintaining the same Rabi frequency. The conductive ground plane is implemented using a highly doped n+ layer which allows us to integrate it monolithically into the device and simplify fabrication.

We experimentally demonstrate the magnetic mirror behavior of all-dielectric metasurfaces at optical frequencies through phase measurements using time-domain-spectroscopy. The unique boundary conditions of magnetic mirrors can lead to advances in sensors, photodetectors and light sources.

In this work, we study the theory and design of an optical leaky wave antenna (OLWA) integrated with resonator topologies such as Fabry-Perot resonator and ring resonator tuned to the telecommunication wavelength of 1550 nm (193.4 THz). The presented OLWA design is compatible with CMOS fabrication technologies. It comprises silicon (Si), silica glass (SiO 2 ) domains forming a dielectric waveguide that hosts numerous periodic perturbations. The radiation from an isolated OLWA takes place due to the leaky wave which decays slowly as it propagates along the perturbed waveguide. The design is tuned by purposely using perturbations of very small filling fraction in a unit cell, thus resulting in a leaky wave harmonic with very small attenuation and phase constants. This in turn leads to a very directive radiated beam almost in the direction normal to the axis of leaky wave propagation. In [Campione et al., Opt. Exp., 20, pp. 21305–21317, (2012)], for a similar isolated OLWA design, the tunability of radiation levels by modifying the optical properties of the Si domain through electron-hole excess carrier generation (thus the leaky wave's propagation constant) is proven to be limited, and an analytic model of OLWA in FPR is provided for the first time with a significant radiation level control. Therefore, in this research we turn our attention to utilizing the OLWA design integrated with resonator schemes such as ring resonators in order to achieve significant radiation control through the control of carrier densities in Si domains. We demonstrate effective control of radiation level alongside engineering a desired beam direction and directivity. Depending on the scheme of OLWA placement inside the resonator topology, the design procedure involves the construction of far-field as an interference beam radiated by different OLWA regions. Such a design allows for forming a stable radiated beam with frequency as well as achieving a high quality factor of resonance and hence an effective control of radiation level. Moreover the minimization of Si regions' sizes can lead to fast electronic operation through control of Si carrier density. The OLWA integrated with resonators are promising for improving the performances of optical switches.

We first introduce the formulation of 2D periodic dyadic Green's function to account for all the field contributions required to thoroughly describe the physics of a 2D array of nanospheres on top of a multilayered substrate. Then, we analyze substrate effects onto complex modes and optical properties of 2D arrays of linear trimers of plasmonic nanospheres and show that Fano resonant features appear for oblique TM-polarized plane wave incidence illumination. These features are attributed to the forced excitation of free modes supported by the array, here computed via modal analysis. We observe strengthened Fano features due to the presence of the multilayered substrate. © 2013 IEEE.

We investigate the radiation of an optical leaky-wave antenna embedded in a Fabry-Perot resonator (FPR), resonating in the direction of the guided leaky wave. Leaky-wave radiation is achieved via the generation of a -1 Floquet harmonic in a dielectric waveguide due to the inclusion of a periodic set of perturbations. The FPR is formed by confining the dielectric waveguide and the leaky-wave section between two partially reflective mirrors. We report the design principles that are required to achieve a pencil beam at broadside as a superposition of leaky waves that travel inside the FPR in two opposite directions. We also investigate the tunability of the radiation by using semiconductor regions in the waveguide and thereby exciting and controlling excess carriers. We report simulation results related to a realistic design as a proof of the concept.