1. Characterization of absorption bands in Ti:sapphire crystals
- Author
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Greg Foundos, Peter F. Moulton, Michal Koselja, Jeffrey G. Cederberg, Jana Preclikova, and Kevin T. Stevens
- Subjects
Range (particle radiation) ,Materials science ,Absorption spectroscopy ,business.industry ,Doping ,Analytical chemistry ,02 engineering and technology ,Laser ,021001 nanoscience & nanotechnology ,01 natural sciences ,Characterization (materials science) ,law.invention ,Electronic, Optical and Magnetic Materials ,Ion ,010309 optics ,law ,Electric field ,Attenuation coefficient ,0103 physical sciences ,Sapphire ,Optoelectronics ,business ,0210 nano-technology ,Absorption (electromagnetic radiation) ,Diode - Abstract
We have measured and characterized, over a wide range of doping levels, the UV-near-IR (190-2000-nm) absorption properties of Ti:sapphire crystals. We find that the strengths of absorption centered around 400-450 and 268 nm depend on the square of the Ti3+ doping level, suggesting an origin from pairs of Ti3+ ions. In addition, we have identified an absorption feature below 210 nm due to Ti3+, rather than Ti4+ charge-transfer transitions. Finally, our data on 800-nm-peak, near-IR absorption shows a complex lineshape, with a lower limit set by Ti3+ pair absorption. Thus the maximum possible Figure-of-Merit for Ti:sapphire reduces as the doping level increases.
- Published
- 2019
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