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• The crystallization of the polymer matrix was decreased with increasing MYB content in the (PVA-PEG) blend matrix. • The FTIR spectra confirm strong conjunction of (PVA-PEG)/MYB films. • The UV–Vis absorption and photoluminescence emission wavelengths are highly coincidence. • In the frequency range of 100 Hz to 1 MHz, the MYB contents have an impact on the dielectric characteristics and AC electrical conductivity. • • This blend is very beneficial as a filter could be used in many industrial, medical and research applications. Using the casting technique, films of 90 wt% PVA/ 10 wt% PEG blend doped with numerous concentrations of methyl blue dye (MYB) were prepared. The effect of methyl blue dye on the unique functional groups of PVA and PEG was detected using a Fourier Transform infrared (FT-IR) spectrometer. The PVA/PEG blend's semi-crystalline characteristic was discovered via the X-ray diffraction pattern. With a rise in MYB doping concentration, the crystallinity of the doped blends degrades. The optical characteristics of the PVA/PEG mixture and the PVA/PEG mixture doped with various concentrations of (MYB) have been measured, including the absorption, transmission, reflection spectra, optical energy gap, optical absorption coefficient, and extinction coefficient. As the MYB dye's weight percentage increases, the composites show a decreasing energy gap and an increasing refractive index. As MYB doping rose, Urbach's energy surged from 8.5 meV to 28.88 meV. (PVA-PEG)/MYB composites demonstrated acceptable optical limiting characteristics. The emission peaks in terms of photoluminescence characteristics shift to red with rising MYB content in (PVA-PEG)/MYB MYB composite sample films, with the peak emission occurring at wavelength λem = 600 nm. According to research done in the frequency range of 100 Hz to 1 MHz, the MYB contents impact the dielectric characteristics and AC electrical conductivity. All of the aforementioned characteristics point to the (PVA-PEG)/MYB polymer composite as a promising choice for laser filters, solar cell technology, electric energy storage, and different optoelectronic applications. [ABSTRACT FROM AUTHOR]

This research work is devoted to studying the linear and nonlinear optical properties of anthracene thin films. For the first time, the fabrication of nanocrystalline anthracene films is presented by using the thermal evaporation conventional technique. All the studied anthracene films exhibit monoclinic crystal structure with dominant preferred orientation along the (001) plane in accordance with X-ray diffraction analysis. The average crystalline size and the strain parameter were calculated and found to be ≈ 14 nm and 42 lines 2 . nm, respectively. The transparency of the fabricated anthracene films is high (>80%) from the end of the visible to the near-infrared region at 1500 nm, after that; it reaches to 87%. The characteristic behavior, analysis of refractive index and absorption coefficient based on the measured spectrophotometric data of the transmittance and reflectance spectra. The transition is allowed one and the evaluated optical band gap ∼3.1 eV with energy tail ∼105 meV. The dispersion curves of the refractive index were found to follow the Wemple-DiDomenico model. The static optical dielectric constant was found to be 2.592. The molecular polarizability of anthracene thin films presented and its value ∼56.58 (Å) 3 . A simple spectroscopic method is used to characterize and estimate the nonlinear optical susceptibilities. Thermal evaporation technology could be useful to fabricate blue OLED and window film in photodetector devices based-anthracene films. [ABSTRACT FROM AUTHOR]

In the current work, nanocrystalline undoped and Sn doped ZnO thin films with different doping concentrations (1, 3, 5, 7 at%) have been deposited on glass substrate by low cost spin coating technique. The strong effect of Sn doping on structural, morphological, optical, nonlinear properties have been observed. X-ray diffraction study revealed that all the thin films are preferentially grown along (002) plane. The crystallite size is found to be increased with increasing the concentration of Sn, similar behavior was observed by atomic force microscopy analysis. Optical study shows that the prepared thin films are highly transparent. The direct optical band gap was calculate and found to be 3.16, 3.20, 3.22, 3.34, 3.18 eV for pure and doped films respectively. The refractive index, linear susceptibility, nonlinear absorption coefficient, nonlinear susceptibility and nonlinear refractive index were calculated. Furthermore, the third order nonlinear optical properties are investigated using Z-scan technique and their values are found to be −3.75×10 −8 cm 2 /W, −3.76×10 −3 cm/W and 0.65×10 −3 esu for 7% Sn doped ZnO, respectively. There is a good correlation between theoretical and experimental third order nonlinear properties and higher values shows that the deposited films are may be applied in nonlinear optical applications. [ABSTRACT FROM AUTHOR]

[Display omitted] • Wide-scale CUT-OFF filter based on PVA /TB films was designed and characterized. • XRD, FTIR, UV–Vis-NIR, dielectric spectroscopy, and optical limiting are used to characterize PVA /TB films. • The direct and indirect allowed transitions have a multi-band bandgap structure. • Dielectric behavior and Electrical conductivity of PVA /TB films were discussed. • The suitability of the parameters calculated for optoelectronic and photonic devices were listed. Poly(vinyl alcohol), PVA doped with (0, 0.11, 0.55, 1.11, and 5.5) wt% of Toluidine Blue dye (TB dye) was prepared by the traditional casting method. The influence of Toluidine Blue dye concentration on spectroscopic, optical, and dialectical properties was investigated. Fourier transform infrared (FTIR) spectroscopies and X-ray diffraction were used to study the molecular and crystalline structure of PVA/Toluidine Blue dye composites. A UV–Visible spectrophotometer was used to investigate the optical characteristics. For all samples, the full-width half-maximum absorption spectra were determined. The direct and indirect allowed transitions have a multi-graded bandgap structure. Within the frequency range of 3 kHz to 10 MHz, the dielectric constant (ε′) and dielectric loss (ε″) were investigated and found to be dependent on the weight percent of TB dye. The correlated barrier hopping can describe the conduction mechanism for the studied samples. Furthermore, the PVA/5.5 wt% TB film demonstrated excellent optical CUT-OFF properties with a low transmission value in the spectral range (200–1300 nm), which is a favorable result for the fabrication of long-blocking optical filters and protective windows for optoelectronic and photonic devices like organic/polymer light-emitting devices, dye-sensitized solar cells, optical limiters, and optical switches. [ABSTRACT FROM AUTHOR]

In the current work, the authors present the systematic study on linear and nonlinear optical properties of Copper-phathalocyanine thin film deposited by thermal evaporation system for the first time. The thickness of the prepared thin film was measured and found to be ~300 nm. X-ray diffraction and AFM study confirms that the prepared thin film possess good quality. The orientation of the grown thin film is found to be along (100). UV–vis-NIR study shows that the deposited thin film is highly transparent (>80%) in the wavelength range of 700–2500 nm. Further, the recorded optical data was used to determine the various linear and nonlinear optical parameters. The calculated value of refractive index is found to be in the range of 0.4–1.0. The direct and indirect band gap value is found to be 2.9 and 3.25 eV, respectively. The value of linear and nonlinear susceptibilities is found to be in order of 10 −12 . The higher value of linear and nonlinear parameters makes it suitable for optoelectronic applications. [ABSTRACT FROM AUTHOR]

Highlights: [•] B3LYP as well as FTIR were utilized to analyze MR. [•] Vibrational assignments for MR were aided at B3LYP/6-311G(d,p). [•] MR has a high dipole moment (7.2Debye) and HOMO/LUMO energy gap (3.5eV). [•] MR is a promising structure for optoelectronic devices as solar cells. [Copyright &y& Elsevier]

Highlights: [•] The Al doped CdO were grown by sol–gel spin-coating. [•] Structural properties were studied by AFM. [•] Optical transmittance is decreased with increasing Al contents. [•] Optical band gaps and the width of localized states were calculated. [•] Al-doped CdO can be used in optoelectronic device applications. [Copyright &y& Elsevier]

Abstract: A CdTe/CdMnTe heterojunction magnetic diode for photovoltaic applications was fabricated by using molecular beam epitaxy (MBE). The ideality factor and the potential barrier height of the diode were determined to be 1.25 and 0.836 eV, respectively. Photovoltaic parameters of the studied device were determined at various illumination intensities. The highest open circuit voltage of the CdTe/CdMnTe heterostructure was equal to 0.56 V at the illumination intensity of 130 mW/cm2. The reverse current of the n-CdTe/p-CdMnTe/GaAs diode increases with the increasing illumination intensities. The obtained results suggest that n-CdTe/p-CdMnTe/GaAs diode can be used as a photodiode in photovoltaic and photodetector applications. [Copyright &y& Elsevier]

Abstract: The current–voltage characteristics of mono-crystalline solar cell device under dark and illumination of 100mW/m2 (AM1.5) were measured. The efficiency of the studied device under AM1.5 was found to be 14.22%±0.2 compared with the company standards. The capacitance properties of mono-crystalline silicon solar cell device were investigated under dark and illumination conditions. The studied mono-crystalline silicon solar cell exhibits an unusual photocapacitance ranging from 50.4 to 4585nF under dark and 100mW/m2 (AM1.5) of white light, respectively. The drastic increase in the capacitance of the solar cell is due to the space charge polarization induced by the increasing number of photogenerated carriers. The photocapacitance mechanism of the solar cell was interpreted by modified Goswami and Goswami (MGG) model. The relative capacitance C ph /C d (the ratio between the capacitance under illumination to the capacitance under dark) and the relative resistance R ph /R d (the ratio between the resistance under illumination to the resistance under dark) as a function of the applied frequency at different illuminations were interpreted. The values of the interface state density N ss and interface capacitance C ss are increased with the increasing illumination intensities. The prepared mono-silicon solar cell device is a good candidate for photocapacitive and photoresistive sensors in modern electronic and optoelectronic devices. [Copyright &y& Elsevier]

Abstract: Heterostructure of p-ZnTe/n-CdMnTe/GaAs (II-VI/II-VI-DMS/III-V) is grown by molecular beam epitaxially growth (MBE). The capacitance–frequency (C–f) characteristics of the prepared heterostructure under dark and different illumination intensities were analyzed. The studied sample shows a capacitance illumination dependence. Modified Goswami and Goswami (G–G) model was used to interpret the capacitance profile under the effect of the irradiated light. The illumination dependence of the relative capacitance (C ph /C d ) at different frequency was studied and interpreted. The interface density states (N ss ), the interface capacitance (C ss ) and dielectric relaxation time (τ) are increased with the increase of the illumination intensities. Therefore, the prepared heterostructure can be used as photocapacitance sensor in modern electronic and optoelectronic devices. [Copyright &y& Elsevier]

• The spin coating technique was used to prepare TiO 2 /PMMA/FTO nanocomposites, uniform thin film with low cost, short time, and high efficiency. • The present research proposed to enhance the structural, electrical, linear, and nonlinear optical, dielectric properties of TiO 2 -doped PMMA/FTO polymeric nanostructures for optoelectronic applications. • The X-ray diffraction (XRD) as well as atomic force microscopy (AFM) methods are employed to characterize the structural morphology of TiO 2 /PMMA/FTO nanocomposite thin films. • UV-Vis NIR spectrophotometry was used to examine the optical properties, including the refractive index (n), the extinction coefficient (k), the value of the energy optical bandgaps, and the nonlinear optical parameters, of the TiO 2 /PMMA/FTO nanostructured films. • For the synthesized TiO 2 /PMMA nanocomposites, the optical direct bandgap (E g) ranges between 4.11–3.35 eV, while the values of the indirect bandgaps were determined to be in the range of 3.61 eV to 2.37 eV. • The dielectric properties of TiO 2 /PMMA/FTO nanocomposites displayed a high dielectric constant with insufficient dielectric loss. • The studied TiO 2 /PMMA/FTO nanostructured films are perfectly appropriate to be applied in optical limiting devices at 632.8 nm red lasers. This current study suggests a novel optical nanocomposite polymethyl methacrylate (PMMA) with titanium oxide (TiO 2) nanoparticles at different concentrations, synthesizing an effective, unexpansive spin coating technique. Adding to that, using both the X-ray diffraction (XRD) method and Fourier transform infrared (FTIR) spectroscopy were very beneficial to study the consistent changes of grain size and strain in nanoscale for the combination of TiO 2 nanoparticles in the host PMMA matrix. The topological structure images were observed by atomic force microscopy (AFM), and it was in good agreement with XRD analysis. Both linear and nonlinear optical parameters of the prepared TiO 2 /PMMA/FTO films were carried out using a VU-Vis-NIR spectrophotometer. Optimized reduction of the optical direct energy bandgap to around ∼ 3.35 eV and indirect bandgap to about 2.37 eV was determined. The obtained results illustrated under study, leading to promising technological applications. Such high structure stability, large dielectric constant, reduced optical bandgap, as well as higher nonlinear optical properties, concluded that the nano-TiO 2 powder mix with PMMA can enhance the morphology and optical properties of the host PMMA polymer and that the uniform prepared TiO 2 /PMMA nanocomposites are excellent candidates to be used in different applied optoelectronic devices. [ABSTRACT FROM AUTHOR]

The present work aims to prepare the nanostructured ZnSe films with high quality onto a fluorine-doped tin oxide glass substrate (FTO/glass) by using the thermal evaporation technique. The X-rays diffraction was used to investigate the structural properties of ZnSe thin films onto FTO glass. The XRD main peaks are corresponding to FTO glass expect the [111], and [311] peaks are related to the ZnSe film. The atomic force microscope supports the nanostructured of the studied films. The linear and nonlinear optical parameters were evaluated and analyzed based on spectroscopic measurements. The dielectric constant and dielectric loss were calculated for ZnSe/FTO thin film. It is clear from the optical analysis and their related refractive index that the nanostructured ZnSe/FTO film has a high refractive index and high third-order nonlinear optical susceptibility. ZnSe/FTO optical system is recommended for the new generation of electronic and optoelectronic devices, especially for telecommunications and nonlinear media. Image 1 [ABSTRACT FROM AUTHOR]

Iron-doped polymethylmethacrylate (Fe3+/PMMA) films were deposited on FTO glass substrates. X-ray diffractometer (XRD), Fourier-transform infrared spectroscopy (FT-IR) were applied to examine the structure of Fe3+/PMMA/FTO films with varying doping percentages of iron-ions. The obtained XRD diffraction results proved the uniform and semi-crystalline in nature of the tested samples. The vibrational modes of both metal-ions and host PMMA polymers were respectively observed at 450 and 980 cm−1. The direct optical energy bandgaps for the proposed undoped and Fe3+-doped PMMA thin films were valued to be approximately 4.11, 4.1004, 4.094, 4.087, 4.07, 3.801, and 3.35 eV. The indirect energy bandgaps were 3.605, 3.58, 3.55, 3.504, 2.85, and 2.37 eV with increasing the Fe3+-contents, respectively. Moreover, the optical limiting of Fe3+/PMMA/FTO films was studied through red He-Ne and green diode lasers operating at 632.8 and 532 nm, correspondingly. Finally, Fe3+-doped PMMA/FTO composites are considered an excellent candidate for various optoelectronic devices. [ABSTRACT FROM AUTHOR]

Herein a good adherent film of PMMA doped with the various ratio of BG-dye deposited on optically flat FTO-substrates by using a well-controlled spin coating process. The average crystallite size and microstrain were determined by X-ray diffraction pattern analysis and were found to be 21.7219 nm and 0.0016, respectively, with a significant change with the amount of BG-dye doping in the matrix of PMMA film. Both linear and nonlinear optical characteristics, as well as their related parameters, were measured using a UV–Vis–NIR spectrophotometer. As a result of doping BG-dye molecules into the host PMMA matrix system, optical absorption studies revealed significant changes in optical characteristics. BG-dye doped PMMA film revealed impressive absorption bands in the range of 350–750 nm, depending on the degree of doping of BG-dye into the PMMA film. Another distinguished property is the attenuation of the complete absorption in the range of 552–688 nm and observed as a cut-off-absorbance. The point of the art of this contribution is the various applications for optical limitation systems like Cut-off filters and other related optical devices due to the remarkable optical features. The BG-dye doping influenced all optical metrics, including the absorption band, absorption edge, and direct and/or indirect energy band gap. The direct energy gap's first region is in the range of 1.77–1.97 eV, whereas the second is in the range of 2.68–2.82 eV, and the third is in the range of 3.67–4.09 eV. The indirectly allowed transitions are divided into two regions, the first of which is in the 1.74–1.82 eV range and the second of which is in the 3.69–3.98 eV range. The appearance of extra energy levels is confirmed by fluctuations in the optical band gap, which are aided by the influence of dopant concentration of BG-dye dopant wt.%. The ratio of BG-dye into the PMMA film is promising for the optical respective of the green light for the cut-off filter as well as optoelectronic device applications. [ABSTRACT FROM AUTHOR]

The current investigation focused on creating dye-doped polymer blend films using a solution cast method with a composition of 60%PVA-30%PVP-10%PEG. These films displayed altered refractive index and absorption edge properties. Various characterization techniques, including XRD, FTIR, UV–vis spectroscopy, and optical limiting effects, were utilized to analyze the structural and optical features of the dyed films. The doped samples showed noticeable changes in the structural properties of the polymer matrix blend, as evident from their XRD and FTIR patterns. Incorporating FB dye into the blend resulted in absorption spectra appearing in multiple bands between 295 and 560 nm. For 532.8 nm He-Ne lasers, the FB/(PVA-PVP-PEG) blend was found to be ideal due to its transmittance CUT-OFF within the 200–600 nm wavelength range. The addition of FB dye had a significant impact on the optical characteristics of the polymer blend, leading to a shift in the absorption edge towards lower photon energy levels. The presence of FB dye was also observed to influence the refractive index (n) of the host polymer, indicating its potential for adjusting optical properties. Detailed investigations into the bandgap revealed a reduction in the bandgap of the host polymer due to the presence of the dye. Electronic transitions were further examined through the ε i (ω) parameter during the bandgap analysis, confirming the role of the dye in altering the optical bandgap. Overall, the synthesized FB/(PVA-PVP-PEG) polymeric films hold promise for various optoelectronic applications, including lasers, optical filters, communication devices, LEDs, and optical switches. [ABSTRACT FROM AUTHOR]

In this work, a solution casting method was used to prepare the PbI 2 /PMMA nanocomposites films. XRD was used to achieve structural characterizations. An increase in an amorphous hump was showed after doping with PbI 2 nanostructured. The spectra of FTIR were evaluated between (4000–400 cm−1). The carbonyl stretch band at 1754 cm−1 shifted to higher wavenumber shows the electrostatic interaction between PbI 2 and the oxygen of the carbonyl group. Nanocomposites films were identified by scanning electron microscope. The optical UV–Vis–NIR aspects of the nanocomposite films were determined. Increasing the concentration of PbI 2 in the investigated samples caused the energy gap to be decreased. Such adjustments in the optical characteristics of the PMMA sample are because of the interaction between the PMMA matrix and the PbI 2 nanoparticles. AC electrical conductivity and dielectric properties were studied at room temperature. The dielectric constant increases with increasing the concentration of PbI 2. Optical limiting was evaluated and investigated for PbI 2 /PMMA nanocomposites and the He–Ne and green lasers power was reduced by increasing PbI 2 contents. The PbI 2 /PMMA nanocomposites are promising candidates for solar cells, electronic/optoelectronic devices, and CUT-OFF laser filters. • PbI 2 /PMMA nanocomposites were prepared by casting method. • The addition of PbI 2 into PMMA matrix reduce the optical bandgap energy. • AC electrical conductivity rises with frequency and PbI 2 dopant levels. • PbI 2 /PMMA nanocomposites showed laser power attenuation. • The designed polymeric composite filter can be used for optoelectronic and radiation detection. [ABSTRACT FROM AUTHOR]

• The optical system based on RhB-doped PMMA doped with Rhodamine B-dye/FTO has deposited. • X-ray illustrates a uniform and semicrystalline structure in nature for the obtained thin films. • Both direct and indirect bandgaps were calculated and analyzed. • The studied polymeric composites films are highly attenuated for the laser beam of 532 nm. • RhB-doped PMMA/FTO composites can be extensively appropriate to the optoelectronic applications. Thin films of PMMA doped with Rhodamine B-dye have deposited successfully on a fluorine-doped tin oxide (FTO) glass substrate as a new optical system by using a spin coating method. This new system is promising to be used in various technological applications as solar energy cells, electronic apparatuses, devices of optical filter properties and optoelectronic tools. X-ray diffraction (XRD) illustrates a uniform and semicrystalline structure in nature for the obtained thin films. A spectrophotometric investigation was applied on the prepared thin films at the range of (300–2500 nm) for the wavelength. Both linear refractive index and absorption index values were measured to be reduced as the wavelength was raised. Tauc's plot indicated that direct and indirect transitions were displayed by the thin film. Both direct and indirect bandgaps were calculated and analyzed. Continuous waves of the green laser beam (operating at 532), and He-Ne laser beam (operating at 632.8 nm) were used to study the optical properties of the prepared thin films with different dye concentrations. The results illustrated that the polymeric composites films are highly attenuated for the laser beam of 532 nm. The designed RhB-doped PMMA/FTO composites can be extensively appropriate to the optoelectronic applications. [ABSTRACT FROM AUTHOR]

Flexible thin film photovoltaic devices have been a way of interest for researchers through the last decade. Creating suitable ultrathin films of any material is necessary for the realization of flexible systems. Therefore, the current study aims to study the impact of the thickness of the Boron sub-phthalocyanine chloride B(SubPc)Cl deposited on flexible Polyacetate (PA) as a polymer substrate. The structural properties of B(SubPc)Cl/PA with different thicknesses have been investigated using XRD and AFM. The investigated samples show an amorphous characterization with grain size slightly changed from 107 to 131 nm for thicknesses of 76 and 300 nm respectively, which is affected by the effect of the thickness. The optical transmission and absorption were studied in the spectral range of 300–2500 nm where the characteristic bands of a metallic phthalocyanine known as B and Q bands were observed in this range of the spectrum. The dispersion parameters, optical dielectric, SELF, and VELF for B(SubPc)Cl/PA were calculated and interpreted. Also, by using Tauc's extrapolation, the optical energy gap (E g) was calculated. The E g has values of 1.76 and 3.19 for a thickness of 76 nm which increased by increasing the film thickness. The nonlinear optical properties of B(SubPc)Cl/PA have been investigated, and the values obtained showed a high nonlinear optical response. The research outcomes candidate B(SubPc)Cl/PA for optoelectronics applications such as solar cells, sensors, and nonlinear optical devices. [ABSTRACT FROM AUTHOR]

In the present work, we systematically investigated the effect of Gd (1, 3, and 5%) doping on the structural, morphological, electrical, and optical properties of NiO thin films deposited on glass substrate using the spray pyrolysis method. X-ray diffraction study revealed that the deposited Gd:NiO(0–5%) films exhibit cubic structure with preferred orientation along (111) direction. The average crystallite size decreases from 15 nm to 12 nm with increasing Gd doping concentration. The atomic force microscope (AFM) topography study revealed that there is a decrease in grain size and variation of roughness with increasing Gd content into NiO lattice. The energy-dispersive X-ray spectroscopy (EDX)/ scanning electron microscope (SEM) mapping studies show the presence and uniform distribution of Gd in the Gd:NiO films. The average optical transparency (70%) and the optical band gap energy values decrease in Gd doped NiO films. The refractive index values are found to be in the range of 1.5–2.6. The higher values of linear and nonlinear optical parameters like χ 1 , χ 3 and n 2 are found to be 0.98 esu, 3.31 × 10−10 esu and 2.92 × 10−9 esu, respectively in Gd doped NiO films. The current study indicates that the Gd doping concentration has a strong influence on linear and non-linear optical properties of NiO films and makes them useful in several optoelectronic device applications. • Gd-doped NiO (0-5 wt.%) thin films are deposited on glass substrates using nebulizer spray pyrolysis method. • XRD and AFM support the preferred orientation of nanostructured Gd-NiO thin films. • Enhancement in linear and nonlinear optical parameters were observed. • Gd-NiO thin film is recommended for optoelectronic and nonlinear media. [ABSTRACT FROM AUTHOR]

NiO thin films were grown systematically using the nebulizer spray pyrolysis (NSP) method with different additions of Ag 1%, 2%, and 3% respectively. A photodetector was fabricated using NiO:Ag thin films. The structural, morphological, compositional, optical, and electrical properties of NiO:Ag thin films were studied as a function of Ag addition. XRD studies show a gradual reduction in the intensity and the broadening with Ag addition, which confirms the formation of nanoparticles. Ag phase has been formed after 3% of Ag addition. Compositional studies using EDS confirms the presence of all the elements. The energy band gap of films is found to be in the range 3.25–3.45 eV with an Ag addition of 1–3%. I–V characteristics and photoresponse of photodetectors were recorded under UV light illumination. The parameters of a photodetector such as external quantum efficiency, responsivity and detectivity were calculated. The observed photo responsivity increases with an increase of Ag (1%) and decreases further higher Ag concentrations.The maximum responsivity is observed for the NiO film with 1%Ag. The photoresponse of all samples confirmed the stable and reproducible characteristics such as external quantum efficiency, responsivity and detectivity.The enhanced properties observed for 1% of Ag-doped film may find applications in the fabrication of optoelectronic devices. [ABSTRACT FROM AUTHOR]

[Display omitted] • Novel Y@CdS photodetectors were developed via facile spray pyrolysis technique. • XRD & FT-Raman analyses confirm the hexagonal phase of CdS at all Y contents. • Optical band gap of films were found in range of 2.38–2.42 eV. • A noticeable enhancement in responsivity (R) and external quantum efficiency (EQE) was noticed with 3 wt. % Y doping. • Developed photodetector with 3 wt.% Y@CdS will be highly useful in optoelectronics. Visible-light photodetectors are in great demand in current scenario for advanced optoelectronic devices. Hence, in current work we have fabricated the photodetectors based on Cadmium Sulfide (CdS) thin films with different contents of Yttrium (Y) doping. Hexagonal phase confirmation of the fabricated films was confirmed by X-ray diffraction and FT-Raman spectroscopy analyses. The crystallite size of grown films was determined and found within the range of 33 nm. Scanning electron microscopy was carried out to analyse the surface morphology of the films and reveals nanograins formation on the surface. Optical absorption/transmission/reflectance spectra were recorded up to near-infrared region and optical energy gap was estimated including several other optical parameters. PL spectra were recorded and an intense emission was observed at 542 ± 12 nm when excited at 350 and 450 nm both. The electrical characteristics were explored under dark and light conditions. The highest photoelectrical resistivity and sensitivity were observed for 5.0 wt.% which are around ∼9.45 × 107 Ω−1 and 55.07 % at 0.5 mW/cm2. However, the highest responsivity, external quantum efficiency and detectivity was observed for 3.0 wt.% and noticed around 0.83 A/W, 193.82 % and 4.28 × 1011 Jones, respectively. Outcomes reveal that the Y doping enhances the CdS photodetection nature. [ABSTRACT FROM AUTHOR]

The current study proposed outstanding thin films of NaIO 3 doped PVA with higher linear and nonlinear optical parameters using a practical, effective, simple, and low-cost approach. Polymeric thin films based on the combination of the polyvinyl alcohol (PVA), used as a matrix, with sodium iodate (NaIO 3) nanoparticles, considered a filler, were synthesized using a solution casting approach. The structural morphology of pure PVA and NaIO 3 doped PVA nanostructured films was investigated though X-ray diffraction (XRD) analysis and scanning electron microscopy (SEM) images. The obtained XRD results concluded an increase in the crystallinity of the host PVA polymer matrix as the weight concentrations of the NaIO 3 dopants increase. SEM images illustrated the external structure morphology of the prepared films, where the cluster agglomeration shows a size increased as increasing the weight concentration of NaIO 3 in the PVA matrix. UV-Vis-NIR spectroscopy was used in this study to study the optical enhancement of the NaIO 3 /PVA nanocomposites as a function of the weight concentration of sodium iodate (NaIO 3) nanoparticles. In this proposed study, it was critical to consider some of the NaIO 3 /PVA optical parameters, including transmittance, absorbance, absorption and extinction coefficients, energy bandgaps, refractive index, optical and electrical conductivities, nonlinear parameters, linear and third nonlinear susceptibilities, and nonlinear refraction coefficient, as well as optical limiting effects. It was observed that with the increase in the NaIO 3 weigh concentrations, the values of the direct and indirect energy bandgaps for NaIO 3 /PVA thin films decrease, compared to the host PVA matrix. The proposed NaIO 3 doped PVA nanocomposites are outstanding promising candidates to pave the way in various optoelectronic devices, taking advantage of the amazing linear optical parameters, huge nonlinear optical properties, low optical energy bandgaps, and large optical limiting. [ABSTRACT FROM AUTHOR]

• Bulk size (18 × 12 × 12 mm3) crystal of L-alanine has been grown by Seed supported solution growth. • Energy gap was calculated via Tauc's rule and found to be lie between 5.26 and 5.36 eV. • Grown crystal is of high transparency of 80 and 89% make it useful in optoelectronic devices. • Mechanical strength values of different faces of L-alanine crystal is noted ~30, 48, 50 and 65 kg/mm2. • Dielectric and electrical properties are inspected at four different faces and discussed. The large growth of L-alanine single crystal (size = ~18 × 12 × 12 mm3) was achieved by seed supported solution growth technique for the first time. The structure and vibrational modes of the crystal were confirmed by X-ray diffraction (XRD) and FT-Raman analyses, respectively. UV–Vis-NIR absorbance and transmittance measurements were carried out and Tauc's rule is used to calculate energy gap for the grown crystal and found to be lie within 5.26–5.36 eV. The grown crystal is of high transparency between 80 and 89%, and the energy gap makes it useful for optoelectronic devices. The mechanical strength and chemical etching studies were also carried out and discussed. The present load independent hardness values along different faces of L-alanine crystal are noted ~30, 48, 50 and 65 kg/mm2, respectively, which indicates that (2 0 2) face showing higher hardness value compare to all the faces. The etch pit density was observed to be ~4 × 102/cm2. Furthermore, dielectric and electrical studies were also done. The facile and low-cost growth, high optical transparency, energy gap, microhardness, dielectric and electrical of the grown crystal indicates that it is suitable for optoelectronic devices. [ABSTRACT FROM AUTHOR]

Thin films of manganese phthalocyanine chloride (MnPcCl) were prepared using a thermal deposition onto a polyacetate sheet substrate. The structure analyses of the obtained MnPcCl thin films of different thicknesses ranging from 55 to 125 nm were investigated using the X-ray diffraction technique. The transmittance and reflectance of MnPcCl thin films were measured at the normal incident light in the 200–2500 nm wavelength range. The absorption coefficient analysis revealed that the films were characterized by indirect allowed transition with two energy gaps. The Wemple-DiDomenico single oscillator model explained the refractive index's dispersion behavior, and dispersion parameters were calculated. The third-order nonlinear optical susceptibility (χ (3) ) and nonlinear refractive index (n 2) were determined using Miller's principles. Optical limiting behavior was estimated using the He–Ne (633 nm) and green (533 nm) lasers power. The obtained results indicate that MnPcCl films are excellent nonlinear optical materials for optical limiters. • Films of MnPcCl were prepared by thermal deposition on polyacetate sheet substrates. • MnPcCl films have the amorphous structure for the thickness from 55 to 125 nm. • MnPcCl films are excellent nonlinear optical materials for optical limiters.. [ABSTRACT FROM AUTHOR]

In the recent article [Optical materials 95(2019)109219], The authors inform that all the calculations are correct. The equation describes that the extinction coefficient has typewriting mistakes. The authors declare that all the calculations and their related optical parameters based on the extinction coefficient, such as dielectric constant, dielectric loss, optical conductivity, and electrical conductivity, are correct. [ABSTRACT FROM AUTHOR]