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The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with bandgaps in the range of ≈1.5–2.3 eV, for use in the top cell paired with a narrower‐gap bottom cell. An outstanding challenge is finding materials with suitable optoelectronic and defect properties, good operational stability, and synthesis conditions that preserve underlying device layers. This study demonstrates the Zintl phosphide compound CaZn2P2 as a compelling candidate semiconductor for these applications. Phase‐pure, ≈500 nm‐thick CaZn2P2 thin films are prepared using a scalable reactive sputter deposition process at growth temperatures as low as 100 °C, which is desirable for device integration. Ultraviolet‐visible spectroscopy shows that CaZn2P2 films exhibit an optical absorptivity of ≈104 cm−1 at ≈1.95 eV direct bandgap. Room‐temperature photoluminescence (PL) measurements show near‐band‐edge optical emission, and time‐resolved microwave conductivity (TRMC) measurements indicate a photoexcited carrier lifetime of ≈30 ns. CaZn2P2 is highly stable in both ambient conditions and moisture, as evidenced by PL and TRMC measurements. Experimental data are supported by first‐principles calculations, which indicate the absence of low‐formation‐energy, deep intrinsic defects. Overall, this study shall motivate future work integrating this potential top cell absorber material into tandem solar cells. [ABSTRACT FROM AUTHOR]

Correlative X‐ray microscopy, including synchrotron X‐ray diffraction and fluorescence, is leveraged to understand the local role of europium as a B‐site additive in CsPbBr3 perovskite crystals. Europium addition reduces microstrain in the perovskite, despite the fact that the degree of europium incorporation into the perovskite varies locally, with a maximum loading over twice the nominal stoichiometry. The presence of europium improves photoluminescence yield and bandwidth, while shifting the emission to bluer wavelengths. Finally, europium‐containing crystals have greatly improved X‐ray hardness. The findings show promise for europium as an additive in perovskite optoelectronic devices. [ABSTRACT FROM AUTHOR]

X‐ray microscopy can provide unique chemical, electronic, and structural insights into perovskite materials and devices leveraging bright, tunable synchrotron X‐ray sources. Over the last decade, fundamental understanding of halide perovskites and their impressive performance in optoelectronic devices has been furthered by rigorous research regarding their structural and chemical properties. Herein, studies of perovskites are reviewed that have used X‐ray imaging, spectroscopy, and scattering microscopies that have proven valuable tools toward understanding the role of defects, impurities, and processing on perovskite material properties and device performance. Together these microscopic investigations have augmented the understanding of the internal workings of perovskites and have helped to steer the perovskite community toward promising directions. In many ways, X‐ray microscopy of perovskites is still in its infancy, which leaves many exciting paths unexplored including new ptychographic, multimodal, in situ, and operando experiments. To explore possibilities, pioneering X‐ray microscopy along these lines is briefly highlighted from other semiconductor systems including silicon, CdTe, GaAs, CuInxGa1−xSe2, and organic photovoltaics. An overview is provided on the progress made in utilizing X‐ray microscopy for perovskites and present opportunities and challenges for future work. [ABSTRACT FROM AUTHOR]

Abstract: Hybrid organometal halide perovskites are known for their excellent optoelectronic functionality as well as their wide‐ranging chemical flexibility. The composition of hybrid perovskite devices has trended toward increasing complexity as fine‐tuned properties are pursued, including multielement mixing on the constituents A and B and halide sites. However, this tunability presents potential challenges for charge extraction in functional devices. Poor consistency and repeatability between devices may arise due to variations in composition and microstructure. Within a single device, spatial heterogeneity in composition and phase segregation may limit the device from achieving its performance potential. This review details how the nanoscale elemental distribution and charge collection in hybrid perovskite materials evolve as chemical complexity increases, highlighting recent results using nondestructive operando synchrotron‐based X‐ray nanoprobe techniques. The results reveal a strong link between local chemistry and charge collection that must be controlled to develop robust, high‐performance hybrid perovskite materials for optoelectronic devices. [ABSTRACT FROM AUTHOR]

Correlative X‐ray microscopy, including synchrotron X‐ray diffraction and fluorescence, is leveraged to understand the local role of europium as a B‐site additive in CsPbBr3 perovskite crystals. Europium addition reduces microstrain in the perovskite, despite the fact that the degree of europium incorporation into the perovskite varies locally, with a maximum loading over twice the nominal stoichiometry. The presence of europium improves photoluminescence yield and bandwidth, while shifting the emission to bluer wavelengths. Finally, europium‐containing crystals have greatly improved X‐ray hardness. The findings show promise for europium as an additive in perovskite optoelectronic devices. [ABSTRACT FROM AUTHOR]