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The paper presents basic approaches in designing and growing by molecular beam epitaxy of (Zn,Mg)(S,Se)-based laser heterostructures with multiple CdSe quantum dot (QD) sheets or ZnCdSe quantum wells (QW). The method of calculation of compensating short-period ZnSSe/ZnSe superlattices (SLs) in both active and waveguide regions of laser heterostructures possessing the different waveguide thickness and different number of active regions is presented. The method allowing reduction of the density of nonequilibrium point defects in the active region of the II-VI laser structures has been proposed. It utilizes the migration enhanced epitaxy mode in growing the ZnSe QW confining the CdSe QD sheet. The threshold power density as low as P ∼ 0.8 kW/cm at T = 300 K has been demonstrated for laser heterostructure with single CdSe QD sheet and asymmetric graded-index waveguide with strain-compensating SLs. [ABSTRACT FROM AUTHOR]

The fracture patterns of active elements of pulsed green lasers with transverse electron-beam pumping, based on ZnSe-containing quantum-size structures, have been investigated. The fracture in the form of thin (∼1 μm) and long (to 100-150 μm) filaments can be explained by the self-focusing of the intrinsic laser radiation in the semiconductor structure. [ABSTRACT FROM AUTHOR]

The characteristics of the radiation of a 890-nm laser based on a quantum-size InGaAs/AlGaAs structure, pumped by a (15-26)-keV electron beam, have been studied. An output pulsed power up to 90 W with an efficiency of 3.5% is obtained from each laser end face at room temperature of the active element and a cavity length of 0.5 mm. [ABSTRACT FROM AUTHOR]