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Ba(Nb x Sn 1- x )O 3 (BNSO) films were epitaxially grown on (001) oriented MgO substrates with Nb doping content from 0.00 to 0.15 by pulsed laser deposition. The structural, electrical, and optical properties of the films were investigated in detail by x-ray diffraction, x-ray photoelectron spectroscopy, Hall effect and transmittance spectroscopy. The lowest room temperature resistivity value of 4.81 × 10 −4 Ω cm with carrier concentration and mobility of 6.59 × 10 20 /cm 3 and 19.65 cm 2 /V was observed in the film at x = 0.05, indicating an excellent electrical conductivity. All the BNSO films exhibit a high transmittance of more than 80% in the visible range. The variation of band gap E g with Nb doping content was interpreted by the Burstein-Moss effect and the occurrence of octahedral tilt distorting. Excellent optical and electrical properties suggest that BNSO films have potential applications in the optoelectronic devices as transparent and conducting oxide material. [ABSTRACT FROM AUTHOR]

Transparent and conductive Ta doped BaSnO 3 (BaSn 1−x Ta x O 3 , BSTO) films with x = 0–0.15 were epitaxially grown on MgO single crystalline substrates by a pulsed laser deposition method. The effects of Ta ions incorporation on the microstructure, electrical and optical properties of BSTO films were investigated. X-ray diffraction measurements indicate that the out-of-plane lattice parameters increase gradually with Ta concentration increasing, and the films are relaxed due to the large lattice mismatch between the films and substrate. Atomic force microscopy images reveal that all the films have smooth surface and low roughness. X-ray photoelectron spectra of BSTO films confirm that the Ta ions are presented in the +5 state. The lowest room-temperature resistivity and the highest carrier concentration and Hall mobility were observed in BSTO film at x = 0.07, with the values of 2.525 mΩcm, 5.024 × 10 20 cm −3 , and 4.921 cm 2 /Vs, respectively. Temperature dependent resistivity behavior shows that the BSTO films with low doping content exhibit metal-semiconductor transition at low temperature. The optical transmittances of all BSTO films are more than 80% in the visible region. The optical band gaps were found to increase from 3.52 to 4.23 eV with the increase of Ta doping content and can be attributed to the Burstein-Moss effect. Thus, the superior electrical and optical properties of Ta doped BaSnO 3 films are comparable to that of La and Sb doped BaSnO 3 films, and have potential applications in the optoelectronic devices. [ABSTRACT FROM AUTHOR]