Search

This paper presents a detailed analysis of aluminium-doped zinc oxide (AZO) thin films and considers them a promising alternative to indium tin oxide in transparent electrodes. The study focusses on critical properties of AZO, including optical, electrical, and mechanical properties, with potential applications in displays, photovoltaic cells, and protective coatings. The deposited AZO thin films are characterised by excellent optical and electrical parameters, with transparency in the visible light range exceeding 80% and resistivity of 10−3 Ω·cm, which gives a high value of figure of merit of 63. Structural analysis confirms the nanocrystalline nature of as-deposited AZO thin films, featuring hexagonal ZnO, orthorhombic Al2O3, and cubic Al2ZnO4 phases. The study includes nanoindentation measurements, which reveal exceptional hardness (11.4 GPa) and reduced elastic modulus (98 GPa), exceeding typical values reported in the literature, highlighting their protective potential. Abrasion tests have shown extraordinary scratch resistance due to the lack of impact on topography and surface roughness up to 10,000 cycles. This comprehensive study demonstrated that as-deposited AZO thin films are multifunctional materials with exceptional optical, electrical, and mechanical properties. The findings open up possibilities for a variety of applications, especially in protective coatings, where the combination of hardness, scratch resistance, and transparency is both rare and valuable. [ABSTRACT FROM AUTHOR]

Various properties of HfO2, such as hardness, corrosion, or electrical resistance, depend on the method and the conditions of deposition. In this work, a thorough comparison of scarcely investigated mechanical properties of HfO2 thin films deposited with different conditions of reactive magnetron sputtering process is presented. Four thin films were sputtered in processes that varied in plasma ignition method (continuous or sequential) and target–substrate distance. The structural characteristics of the HfO2 thin films were examined using Raman spectroscopy and X-ray diffraction measurements. Furthermore, the optoelectronic properties were determined based on transmittance and current–voltage characteristics. The mechanical properties of the HfO2 thin films were determined using nanoindentation and scratch test. In turn, the corrosion properties were determined by analyzing the voltametric curves. The transparent HfO2 thin films deposited in the continuous process are characterized by better corrosion resistance than the same layer formed in the sequential process, regardless of the target–substrate distance (8 cm or 12 cm). Furthermore, these samples are also characterized by the highest value of Young's modulus and scratch resistance. The combination of good corrosion and scratch resistance could contribute to the new application of HfO2 as a corrosion protective material. [ABSTRACT FROM AUTHOR]

Analysis of the optical properties of a gradient (Ti,Cu)Ox thin film is presented in this paper. The thin film was prepared using reactive co-sputtering of Ti and Cu targets. The desired elemental concentration profiles of Cu and Ti versus the thin film thickness were obtained by changing the power delivered to the magnetron equipped with Cu, while the powering of the magnetron equipped with the Ti target was maintained at a constant level during the film deposition. Optical properties were analysed using the reverse engineering method, based on simultaneously measured optical transmittance and reflectance. Detailed microstructure analysis performed using transmission electron microscopy investigations revealed that the thin film consisted of at least four areas with different structural properties. Finding a satisfying fit of theoretical to experimental data required taking into account the heterogeneity in the material composition and microstructure in relation to the depth in the prepared gradient thin film. On the basis of the built equivalent layer stack model, the composition profile and porosity at the cross-section of the prepared gradient film were evaluated, which agreed well with the obtained elemental and microscopy studies. [ABSTRACT FROM AUTHOR]

Hydrogen gas sensors have recently attracted increased interest due to the explosive nature of H2 and its strategic importance in the sustainable global energy system. In this paper, the tungsten oxide thin films deposited by innovative gas impulse magnetron sputtering have been investigated in terms of their response to H2. It was found that the most favourable annealing temperature in terms of sensor response value, as well as response and recovery times, was achieved at 673 K. This annealing process caused a change in the WO3 cross-section morphology from a featureless and homogenous form to a rather columnar one, but still maintaining the same surface homogeneity. In addition to that, the full-phase transition from an amorphous to nanocrystalline form occurred with a crystallite size of 23 nm. It was found that the sensor response to only 25 ppm of H2 was equal to 6.3, which is one of the best results presented in the literature so far of WO3 optical gas sensors based on a gasochromic effect. Moreover, the results of the gasochromic effect were correlated with the changes in the extinction coefficient and the concentration of the free charge carriers, which is also a novel approach to the understanding of the gasochromic phenomenon. [ABSTRACT FROM AUTHOR]

This paper reports results of investigations on selected properties of vanadium oxide thin films deposited using gas impulse magnetron sputtering and annealed at temperatures in the range of 423 K to 673 K. Post-process annealing was shown to allow phase transition of as-deposited films from amorphous to nanocrystalline V2O5 with crystallite sizes in the range of 23 to 27 nm. Simultaneously, annealing resulted in an increase in surface roughness and grain size. Moreover, a decrease in transparency was observed in the visible wavelength range of approximately 50% to 30%, while the resistivity of formed vanadium pentoxide thin films was almost unchanged and was in the order of 102 Ω·cm. Simultaneously, the best optoelectronic performance, testified by evaluated figure of merit parameter, indicated the as-deposited amorphous films. Performed Seebeck coefficient measurements indicated the electron type of electrical conduction of each prepared thin film. Furthermore, gas sensing properties towards diluted hydrogen were investigated for annealed V2O5 thin films, and it was found that the highest senor response was obtained for a thin film annealed at 673 K and measured at operating temperature of 623 K. [ABSTRACT FROM AUTHOR]

The paper presents the results of an investigation of the influence of technological parameters on the microstructure, optical, electrical and nanomechanical properties of zinc oxide coatings prepared using the pulsed reactive magnetron sputtering method. Three sets of ZnOx thin films were deposited in metallic, shallow dielectric and deep dielectric sputtering modes. Structural investigations showed that thin films deposited in the metallic mode were nanocrystalline with mixed hexagonal phases of metallic zinc and zinc oxide with crystallite size of 9.1 and 6.0 nm, respectively. On the contrary, the coatings deposited in both dielectric modes had a nanocrystalline ZnO structure with an average crystallite size smaller than 10 nm. Moreover, coatings deposited in the dielectric modes had an average transmission of 84% in the visible wavelength range, while thin films deposited in the metallic mode were opaque. Measurements of electrical properties revealed that the resistivity of as-deposited thin films was in the range of 10−4 Ωcm to 108 Ωcm. Coatings deposited in the metallic mode had the lowest hardness of 2.2 GPa and the worst scratch resistance among all sputtered coatings, whereas the best mechanical properties were obtained for the film sputtered in the deep dielectric mode. The obtained hardness of 11.5 GPa is one of the highest reported to date in the literature for undoped ZnO. [ABSTRACT FROM AUTHOR]

In this work, a complex examination of vanadium oxide thin films prepared by gas impulse magnetron sputtering with various Ar:O2 gas ratios of 2:1 ÷ 8:1 was conducted. X-ray diffraction revealed the amorphous nature of the prepared thin films, and scanning electron microscopy images showed that the thin films were crack-free and homogenous. Optical properties investigations revealed that a higher oxygen content in the Ar:O2 atmosphere during sputtering caused an increase in transparency. The sample prepared with the highest amount of oxygen in the gas mixture during deposition had 51.1% of the average transmission in the visible wavelength range. A decrease in oxygen caused deterioration in the thin film transparency with the lowest value equal to 21.8%. Electrical measurements showed that the prepared thin films had a semiconducting character with either electron or hole conduction type, depending on the sputtering gas composition. A small amount of oxygen in the gas mixture resulted in the deposition of p-type thin films, whereas an increase in the amount of oxygen caused a change to n-type electrical conduction. Resistivity decreased with increasing Ar:O2 ratio. The gas sensing response toward diluted hydrogen was investigated for all the VxOy thin films, but at low operating temperatures, only the p-type thin films exhibited a visible response. [ABSTRACT FROM AUTHOR]

Copyright of Przegląd Elektrotechniczny is the property of Przeglad Elektrotechniczny and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

The biological and photocatalytic activity of TiO2 and TiO2:Cu in relation to their structure, surface topography, wettability and optical properties of the thin films was investigated. Thin-film coatings were prepared by magnetron sputtering method in oxygen plasma with use of metallic targets (Ti and Ti-Cu). The results of structural studies revealed that addition of Cu into titania matrix (during the deposition process) resulted in obtaining of an amorphous film, while in case of undoped TiO2, presence of nanocrystalline anatase (with crystallites size of 20 nm) was found. Moreover, an addition of cooper had also an effect on surface diversification and decrease of its hydrophilicity. The roughness of TiO2:Cu film was 25% lower (0.6 nm) as-compared to titania (0.8 nm). These modifications of TiO2:Cu had an impact on the decrease of its photocatalytic activity, probably as a result of the active surface area decrease. Antibacterial and antifungal properties of the thin films against bacteria (Enterococcus hirae, Staphylococcus aureus, Bacillus subtilis, Escherichia coli) and yeast (Candida albicans) were also examined. For the purpose of this work the method dedicated for the evaluation of antimicrobial properties of thin films was developed. It was revealed that Cu-additive has a positive impact on neutralization of microorganisms. [ABSTRACT FROM AUTHOR]

In this paper, a comparison of TiO2 thin films prepared by magnetron sputtering with a continuous and pulsed gas flow was presented. Structural, surface, optical, and mechanical properties of deposited titanium dioxide coatings were analyzed with the use of a wide range of measurement techniques. It was found that thin films deposited with a gas impulse had a nanocrystalline rutile structure instead of fibrous-like anatase obtained with a continuous gas flow. TiO2 thin films deposited with both techniques were transparent in the visible wavelength range, however, a much higher refractive index and packing density were observed for coatings deposited by the pulsed gas technique. The application of a gas impulse improved the hardness and scratch resistance of the prepared TiO2 thin films. [ABSTRACT FROM AUTHOR]

[Display omitted] • Presents a study of Diamond-like Carbon films with different sp3 content (35–70 %). • The investigated DLC films were deposited by the RF ICP PECVD technique. • Structural, optical, electrical and mechanical properties were investigated. • Points out versatility of DLC films for GaAs/InGaAs-based optoelectronic devices. • Studied DLC films had high plasticity index (0.16) and plastic resistance (0.44). In this paper, a comparison of Diamond-like Carbon (DLC) films with different sp3 fraction content prepared by Radio Frequency Inductively Coupled Plasma Enhanced Chemical Vapour Deposition (RF ICP PECVD) was presented. Structural, surface, optical, and mechanical properties of deposited DLC films were analyzed with the use of a wide range of measurement techniques. The investigated films were deposited on silicon (Si), amorphous silica (SiO 2), and metallic (Ti6Al4V) substrates at room temperature. The deposited DLC films have sp3 fraction content ranging from 35 % to 70 %, uniform, compact and dense microstructure. The investigation indicates that the properties of DLC films required for micro- and optoelectronic applications improve with the sp3 fraction content. The refractive index (n) increased from 1.976 to 2.086, packaging density (PD) from 0.964 to 0.744, electrical resistivity (ρ) from 2.1 ∙ 1010 to 4.4 ∙ 1011 Ωcm, hardness (H) from 16.4 19.1 to GPa and elastic modulus (E) from 109 to 129 GPa. However, the 50 % sp3 DLC thin film exhibited the highest resistance to cracking (H3/E2 = 0.44). The decrease of Urbach energy (E U) from 0.75 to 0.46 eV was observed for the DLC film with the highest sp3 fraction content, while all investigated DLC samples had similar optical bandgap energy (E gopt ≈ 1.3 eV). The research has shown that it is possible to obtain DLC coatings using the RF ICP PECVD technique that has better properties than films deposited by the classic PECVD technique. [ABSTRACT FROM AUTHOR]