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This research seeks to fabricate neoteric VSbO4 sheets at various thicknesses (138, 217, 291, and 374 nm) utilizing spray pyrolysis. Scanning electron microscopy was used to analyze the VSbO4 sheets' surface properties. Aside from that, X-ray diffraction demonstrated that all neoteric VSbO4 films revealed a polycrystalline nature with a tetragonal structure. The optical characteristics of the neoteric VSbO4 sheets were investigated using transmission and reflection spectrophotometric readings. The refractive index of the neoteric VSbO4 sheets increased by enlarging the sample thickness. The VSbO4 sheets' Urbach energy magnitudes have increased from 0.113 to 0.146 eV by increasing layer thickness from 138 to −374 nm. Also decreasing from 3.81 to 3.37 eV is the optical band-gap energy. Further, the impacts of layer thickness on the linear optical parameters increase the refractive index, electrical conductivity, real and imaginary sections of the dielectric indices, and optical conductivity. The nonlinear optical indices of the neoteric VSbO4 films grew as the sheet thickness increased from 138 to 374 nm. Further, the activation energy of the explored VSbO4 sheets decreased by increasing the sheet thickness. [ABSTRACT FROM AUTHOR]

The authors use chemical bath deposition to synthesize novel copper-nickel bismuth sulfide (CuNiBiS3) thin films on glass slides. The X-ray diffraction measurements detected the crystal structure of the CuNiBiS3 layers, which display orthorhombic structures for these films. The structural indices of the CuNiBiS3 layers were determined by the Williamson–Hall relationship. Furthermore, the Energy dispersive spectroscopy of the CuNiBiS3 layers refers to these layers having a stoichiometric composition. On the other side, the linear optical indices of the CuNiBiS3 layers were determined depending on the transmittance and reflectance data. The energy gap analysis indicates that the CuNiBiS3 layers have a direct optical transition. The energy gap values of the CuNiBiS3 layers were reduced from 1.43 to 1.31 eV by enlarging the thickness of these layers. These layers' nonlinear, optoelectrical, and dispersion indices, like the static high-frequency dielectric constant, optical conductivity, dispersion energy, nonlinear refractive index, and optical carrier concentration, were improved by boosting the layer thickness. Moreover, the hot probe test revealed that CuNiBiS3 layers tended to acquire p-type characteristics. [ABSTRACT FROM AUTHOR]

In this research, we report the manufacture of neoteric AgGaGeS4 layers by the thermal evaporation method. The AgGaGeS4 layers exhibited orthorhombic structure, and the structural indices were evaluated using the Scherer formulas from the XRD data. Further, the surface study indicated that the AgGaGeS4 films have homogenous and uniform surfaces, while energy-dispersive X-ray spectroscopy (EDX) confirmed the compositional constituent percentages of the AgGaGeS4 layers. The optical properties of the AgGaGeS4 layers refer to improving the extinction coefficient, absorption coefficient, and refractive index by enlarging the layer thickness. In addition, the optical bandgap of the AgGaGeS4 layers was lowered from 1.67 to 1.46 eV by boosting the layer thickness. Furthermore, the skin depth of these layers diminished, whereas the absorption coefficient values revealed the opposite trend. On the other side, Miller's equations have been applied to assess nonlinear optical properties of the AgGaGeS4 layers, such as nonlinear refractive index and first and third-order nonlinear optical susceptibility. Moreover, the hot-probe method proved the p-type semiconducting characteristics of the AgGaGeS4 layers. [ABSTRACT FROM AUTHOR]

This study presents the preparation of novel Cu2MnGeS4 thin films deposited on glass substrates, for the first time by an inexpensive spray pyrolysis technique. The crystal structure of the Cu2MnGeS4 samples was checked via the X-ray diffraction technique. The field-emission scanning electron microscope is used to investigate the surface morphology of the present films. Energy-dispersive spectroscopy has been employed to detect the compositional elemental percentage of thin films. Some structural parameters and defects, of the Cu2MnGeS4 samples, like the microstrain, the crystallite size, the dislocation density, and crystallites per unit surface area have been computed, studied and discussed. The experimental transmittance and reflectance spectra of the Cu2MnGeS4 samples have been measured to evaluate the linear and nonlinear optical parameters. The linear optical results indicate that Cu2MnGeS4 samples displayed a directly allowed optical transition and the optical energy gap values were reduced from 1.495 to 1.301 eV by increasing the thickness. Moreover, the dispersion parameters obtained and discussed via the Wemple-DiDomenico model. In addition, the nonlinear optical parameters of the Cu2MnGeS4 samples were computed and analysed. The hot-probe experiment indicates that the Cu2MnGeS4 films exhibited p-type conductivity. [ABSTRACT FROM AUTHOR]