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In this paper, a review of microwave avalanche transit-time diode (IMPATT diode) structures has been presented. The structure of IMPATT diode with a sharp p-n junction on Si has been considered, and functions of the ohmic contacts have been shown. Physical and technical requirements for contacts have been formulated as based on their functional purpose and the existing technological base. A review of existing ohmic contacts and their ranking in terms of suitability and promising use in IMPATT diode have been made. The structure of metallization for IMPATT diode was chosen in the framework of the specificity of the IMPATT diode operation. [ABSTRACT FROM AUTHOR]

In this work, the method of electrophysical diagnostics of ohmic contacts to n+-n-n+ structures for powerful silicon impact ionization avalanche transit-time diodes has been proposed. The specific resistivity of the Au-Ti-Pd-n+-n-n+-Si contacts and the current-flow mechanism within the temperature range 100...360 K has been investigated. The generalized method for studying the temperature dependence of the specific contact resistance in the case of multilayer structures with non-uniform doping level has been proposed. The values of the specific contact resistance have been calculated from the temperature dependence of the total resistance of the vertical structure. The offered method can be used to control the electrophysical parameters of ohmic contacts between the etching cycles in technology of manufacturing powerful silicon impact ionization avalanche transittime diodes. [ABSTRACT FROM AUTHOR]

Experimental data on manufacturing the ohmic contacts Au-Ti-Pd-n+-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n+-n-n++-n+++-InP structure. The specific contact resistance measured at room temperature was about 7·10-5 Ohm·cm². Voltage-current characteristics within the temperature range 110 to 380 K are linear. Gunn diodes with such contacts, which were made as a straight mesa-structure in a pulsed mode (pulse duration of 100 ns, pulse ratio of 1000, operating current of 2.2 A), generated the microwave power ~10 mW in the V-band. [ABSTRACT FROM AUTHOR]

Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙107 Ohm/ eing based on the analysis of correlation dependence between the resistivity of contact and that of semiconductor for the unannealed sample and the sample after rapid thermal annealing it has been shown that variation of the contact resistance on the plate is related with that of semiconductor and may be caused by inhomogeneity of the dopant distribution. [ABSTRACT FROM AUTHOR]