1. Optical and microstructural studies of InGaN/GaN quantum dot ensembles.
- Author
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Davies, S. C., Mowbray, D. J., Ranalli, F., Parbrook, P. J., Wang, Q., Wang, T., Yea, B. S., Sherliker, B. J., Halsall, M. P., Kashtiban, R. J., and Bangert, U.
- Subjects
QUANTUM dots ,PHOTOLUMINESCENCE ,NUCLEAR excitation ,SEMICONDUCTORS ,SURFACE tension ,NUCLEAR physics - Abstract
An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra. [ABSTRACT FROM AUTHOR]
- Published
- 2009
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