1. Visible photoemission from InN.
- Author
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Glesener, J. W. and Estrera, J. P.
- Subjects
- *
ELECTRON work function , *PHOTOEMISSION , *PARTICLES (Nuclear physics) , *NONMETALS , *SEMICONDUCTORS , *SEMICONDUCTOR industry - Abstract
At 5.8 eV, InN has one of the highest electron affinities of any semiconductor. Upon applying cesium and oxygen to a previously hydrogen cleaned InN surface, visible photoemission was observed. The InN spectral response confirms the standard model of photoemission yield with an inclusion of a tunneling factor for the electron escape probability. The existence of photoemission beyond 950 nm supports the case for a lower bandgap in this material. [ABSTRACT FROM AUTHOR]
- Published
- 2008
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