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Metal oxide semiconductors are promising interfacial materials for organic photovoltaics (OPVs) because of their electrical properties and solution processability. In this article, we report the fabrication of poly(3-hexylthiophene):[6,6]-phenyl-C61 butyric acid methyl ester (P3HT:PCBM) OPV devices incorporating solution-based NiO interfacial layers that show promising enhancements of the device photocurrent and stability. We discuss the impact of parasitic shunt and series resistances on device performance as well as the ambient degradation of these devices, studied with intensity modulated photocurrent spectroscopy (IMPS). The results showed that charge extraction was predominantly affected by degradation via decrease in carrier mobility and increased trapping/recombination, revealing the physical mechanism behind the degradation observed. 2012 Elsevier Ltd. All rights reserved.

The present work demonstrates the usefulness of nickel oxide as a hole transporting material in solid state dye-sensitized solar cells (SSDSSCs). We report on the photovoltaic performances of sensitized TiO2/NiO heterojunctions, and demonstrate that the TiO2 film thickness and morphology, as well as NiO film thickness, have significant effects on the photovoltaic behaviour of TiO2/NiO SSDSSC. Under 1 sun AM1.5G simulated illumination, the SSDSSCs demonstrated best photovoltaic performance with a short circuit photocurrent density, open circuit voltage, fill factor and efficiency of 0.91 mA cm−2, 780 mV, 40% and 0.3%, respectively. This study draws attention to the feasibility of enhancing the photovoltaic performance in SSDSSC devices through development of appropriately designed sensitized TiO2/NiO heterojunctions.