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We report on electrical noise measurements on both Rgo,&tauCdo,3Te test patterns and hybrid 320 × 256 focal plane array in order to explain the low-frequency pixel flickering physical origin. Dark and under infrared illumination test patterns characterization highlights that the detector chip is not responsible for the flickering phenomenon. Taking into account the silicon readout chip influence when the full infrared complementary metal-oxyd semiconductor (IRCMOS) infrared detector is hives- ligated, the indium bump based interconnecting system is finally pointed out as a potential excess noise source. [ABSTRACT FROM AUTHOR]

We report terminal electrical noise measurements on 1.55-μm DBR tunable laser diodes in the 1 Hz-1 MHz frequency range, performed using an electrical correlation method. These measurements are compared with a comprehensive electrical model based on rate equation formalism. Taking into account diffusion phenomenon and structural parameters, we obtain a complete agreement between the model and the measurements above threshold and a quite similar tendency below threshold. The influence of Bragg section bias is also discussed. [ABSTRACT FROM AUTHOR]