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AlGaN thin films and Schottky barrier Al0.4Ga0.6N diodes exhibit generation-recombination (GR) noise with activation energies of 0.8 - 1 eV. GR noise in AlGaN/GaN Heterostructure Field Effect transistors (HFETs) corresponds to activation energies in the range from 1 - 3 meV to 1 eV. No GR noise is observed in thin doped GaN films and GaN MESFETs. GR noise with the largest reported activation energy of 1.6 eV was measured in AlGaN/InGaN/GaN Double Heterostructure Field Effect Transistors (DHFETs). Local levels responsible for the GR noise in HFETs and DHFETs might be located in AlGaN barrier layers. [ABSTRACT FROM AUTHOR]