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We report results of the current–voltage characteristics and low-frequency noise in Au nanoparticle (AuNP)-decorated graphene–Si Schottky barrier diodes. Measurements were conducted in ambient air with addition of either of two organic vapors, tetrahydrofuran [(CH2)4O; THF] and chloroform (CHCl3), as also during yellow light illumination (592 nm), close to the measured particle plasmon polariton frequency of the Au nanoparticle layer. We observed a shift of the DC characteristics at forward voltages (forward resistance region) when tetrahydrofuran vapor was admitted (in a Au-decorated graphene–Si Schottky diode), and a tiny shift under yellow irradiation when chloroform was added (in not decorated graphene–Si Schottky diode). Significantly larger difference in the low-frequency noise was observed for the two gases during yellow light irradiation, compared with no illumination. The noise intensity was suppressed by AuNPs when compared with noise in graphene–Si Schottky diode without an AuNP layer. We conclude that flicker noise generated in the investigated Au-decorated Schottky diodes can be utilized for gas detection. [ABSTRACT FROM AUTHOR]

Schottky diodes with Ni/Au contact to the side of the two dimensional channel in GaN/AlGaN system were fabricated and studied. This kind of lateral heterodimensional diodes demonstrated the ideality factor n=1.2–1.25 and apparent barrier height φb=(0.59–0.63) eV. The noise measurements within the frequencies range from 1 Hz to 50 kHz showed that the diodes demonstrated the superposition of 1/f and generation recombination noise. In spite of extremely small area of lateral Schottky diodes, the amplitude of noise was similar or even smaller than that for AlGaN and GaN Schottky diodes with the regular contact. This makes GaN-based lateral Schottky diodes to be very promising devices for RF and terahertz applications. [ABSTRACT FROM AUTHOR]