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Abstract: In this paper, a shift in the photoluminescence (PL) peak from blue to near-infrared region was observed in the Si+-implanted 400-nm-thick SiO2 films with the rapid thermal annealing (RTA) method only. As the Si+-fluence was 1×1016 ions/cm2, a blue band was observed in the films after RTA at 1050°C for 5s in dry-N2 atmosphere; then, the band shifted from blue to orange upon increasing the holding temperature of RTA to 1250°C in the films after the isochronal RTA in dry N2. Furthermore, while the fluence was increased to 3×11016 ions/cm2 and the holding temperature was at the same range between 1050 and 1250°C, the PL peak occurred between red and near-infrared regions. Although the RTA and conventional thermal annealing (CTA) methods produce a similar mechanism, the CTA method needs a much longer annealing-time and a higher Si+-implanted dose than the RTA method for producing the same shift and intensity of PL peak from the as-implanted sample. Therefore, the RTA method can produce the mechanism in the Si+-implanted sample with the PL energy between blue and near-infrared band in place of the CTA method. [Copyright &y& Elsevier]

We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO2 films implanted by different doses of Si+ ions. Room-temperature PL from 400-nm-thick SiO2 films implanted to a dose of 3×1016 cm-2 shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950-1150 °C) and duration (5-20 s). The reported approach of implanting silicon into SiO2 films followed by RTA may be effective for tuning Si-based photonic devices. [ABSTRACT FROM AUTHOR]