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Your search keyword '"Kawakubo, T."' showing total 2 results
Start Over Author "Kawakubo, T." Topic neutron transmutation doping of semiconductors
2 results on '"Kawakubo, T."'

1. Influence of photoexcitation on hopping conduction in neutron-transmutation-doped GaAs.

Author

Satoh, M., Kawahara, H., Kuriyama, K., Kawakubo, T., Yoneda, K., and Kimura, I.

Subjects
HOPPING conduction, GALLIUM arsenide, NEUTRON transmutation doping of semiconductors, PHOTOCONDUCTIVITY
Abstract

Details a study which examined the influence of photoexcitation on the hopping conduction in neutron transmutation doping gallium arsenide (GaAs). Discussion of the neutron transmutation doping of GaAs; Measurement of photoconductance; Temperature dependence of photoconductance.

Published
1988
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2. Depth uniformity of electrical properties and doping limitation in neutron-transmutation-doped semi-insulating GaAs.

Author

Satoh, M., Kuriyama, K., and Kawakubo, T.

Subjects
NEUTRON transmutation doping of semiconductors, NEUTRON irradiation, GALLIUM arsenide
Abstract

Presents a study that reported a preliminary evaluation of the uniformity of electrical properties in neutron transmutation doping (NTD) semi-insulating gallium arsenide (GaAs) after annealing. Description of NTD; Limitations of low-level NTD in semi-insulating GaAs; Difference between the resistivities for the samples irradiated at different correlates and the amount of activated impurities in each sample.

Published
1990
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