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In this paper, results of optical absorption of Pulsed Nd:YAG laser texturing on silicon solar cells surfaces, before and after post treatment were investigated. Silicon is known as a semiconductor which absorbs light poorly. This is because silicon material has indirect energy bandgap about 1.12 eV at room temperature which limits the efficiency of solar cells. Due to the material price, the thin silicon wafer solar cells are used to fabricate solar cells. Thin silicon solar cells is inexpensive and can perform better by improved the technique on fabrication of solar cells. One of the technique to improve solar cells efficiency for thin silicon wafer is a light trapping. Thin silicon wafer come with disadvantages which is cannot absorb longer wavelength. Therefore, to improve light trapping on thin silicon solar cells, a good textured must be created on the top of the silicon wafer surface in order to prolong the light path refractive and reflective inside the solar cells. This paper shown Pulsed Nd:YAG laser is used for making parallel pattern and grid pattern as a textured on silicon wafer top surfaces. After laser texturing is completed, the samples were then immersed in KOH solution. KOH solution is used to removed the unwanted particles and clean the silicon surfaces. An expected result of this investigation is that the optical absorption for both after post treatment Grid pattern and Parallel pattern exhibit high absorption, compared to the sample of Grid pattern and Parallel pattern non-post treatment which have low absorptions. The higher value of absorption for laser texturing on silicon wafer is start from 380 nm until 880 nm. The absorption decrease a little bit from 880 nm until 1050 nm. Interestingly, the silicon wafer with laser textured still have absorption for infrared light from 1050 nm until 1200 nm. This results means, laser texturing with post treatment can improved light absorption of thin silicon wafer which is trap more photons thus will resulting high efficiency.

Surface texturing is very important in silicon solar cells fabrication in order to enhance light trapping by reducing surface reflectance. Basically, silicon solar cells surfaces will be etched by chemical solution either anisotropic etched or isotropic etched which are known as conventional methods. The chemicals that have been used for this conventional method includes alcohol, acids, potassium hydroxide and addictive chemical like surfactant. Even though the texture surfaces created by chemical etched can reduce the reflectance, this technique is not environmental friendly. This technique could only be applied on monocrystalline silicon, but not for the multicrystalline silicon because of the presence of high selectivity of etching along specific directions and multiple crystallographic grain orientation. Moreover, the chemicals waste could harmed and give pollution to the environment. In this paper, new technique has been used to texture the silicon solar cells surfaces. The new texturing technique proposed in this paper is pulsed Nd:YAG laser. By using pulsed Nd:YAG laser, it can texture silicon solar cells surfaces and reduce the reflectance. Pulsed Nd:YAG laser also can working independently on any types of silicon surfaces. However, the groove lines of laser texturing depending on X-Y translation table that connected to pulsed Nd:YAG laser system. This paper explained the effect of various X-Y translation table settings of pulsed Nd:YAG laser to texturing silicon solar cells surfaces in order to reduce the reflectance percentage. As a result, pulsed Nd:YAG laser texturing on silicon solar cells surfaces in this paper shown the reflectance below than 5% which is very significant in order to increase absorption of incident solar radiation.

Monocrystalline silicon texturization will be elaborate in this paper as a new method for texturing silicon surface. Normally, silicon surface will textured by using wet chemical etched. Some of crystalline wafer is ineffective when using conventional methods, because the different crystallographic orientation of regions of diversified consequence. Conventional method which is wet chemical etched always shown not uniform texture. So, the texturization with laser will introduce as a promising method in reducing reflection on silicon surface. This is the reason for conducting this research. Field Emission Scanning Electron Microscopy (FESEM) and digital microscope are performed to evaluate the results. Texturization of monocrystalline silicon surface by using Pulsed Laser Nd:YAG was found to be promising method in terms to avoid chemical texturing etched method. Compared to the conventional texturing method, laser texturization is much more independent on grains crystallographic orientation. Higher homogeneity texture can be reached when using laser Nd:YAG compared with chemical or electrochemical methods. The heat affected area caused by material damages is related with presented method limitation implementation practically. However, one step of chemical etching will be used to remove the damages after laser texturization. The main reason conducted this new methods are to reduce reflectance from bare or polished silicon surface and adapt it into solar cell manufacturing process. This new methods are expected to gives high efficiency solar cells.