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In-doped ZnO (IZO) nanowires were grown using the chemical vapour deposition method. The IZO nanowires have been characterized by scanning electronic microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and UV–Visible spectroscopy. The PL results demonstrated a larger band-gap for the IZO nanowires in comparison to the undoped ZnO. Two major emission peaks were observed for the IZO nanowires, one originated from the free exciton recombination (ultraviolet emission) and another possibly related to the deep-level emission (visible emission). Furthermore, the nonlinear optical characteristic of the nanowires was studied using picosecond Z-scan technique. The experimental results show that the two and three-photon absorption coefficient of samples were able to be observed. These studies make the promising potential applications of the samples in the development of multifunctional all-optical devices. [ABSTRACT FROM AUTHOR]

In-doped ZnO (IZO) nanowires were prepared using the chemical vapour deposition method. The nonlinear optical characteristic and optical Kerr transmittance of the IZO nanowires were studied by Z-scan and time resolved optical Kerr gate technique, respectively. Two and three-photon absorption coefficient of the samples were experimental obtained. Moreover, with an 800 nm femtosecond excitation, an important Kerr signal originated by an induced birefringence was observed. These studies promise their potential applications in multifunctional all-optical devices. [ABSTRACT FROM AUTHOR]