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Quantum phase slip (QPS) is an important effect that occurs in one-dimensional (1D) or quasi-1D superconducting (SC) materials. Due to the extremely high requirements on the uniformity and quality of SC nanowires, it is currently very challenging to obtain repeatable and controllable QPS devices. Here, we report a systematic study of the QPS effect in NbN SC nanowires. High-quality NbN nanowires with different widths are fabricated by combining the processes of photo-lithography, electron beam lithography, and inductively coupled plasma etching. It is found that the electrical transport of the nanowires showed a systematic variation with the wire width, and a clear evolution from single to multiple QPS events with the decrease in wire width is uncovered at low temperatures. Based on these experimental results, the phase diagram reflecting the evolution of the physical states of the nanowires with wire width and temperature is obtained. In addition, we observed the features of the critical voltage, which is a characteristic of the occurrence of coherent QPS (cQPS), in samples with a width of 36 nm in the multiple QPS region. It is worth noting that this cQPS behavior was detected in a non-high-impedance environment. [ABSTRACT FROM AUTHOR]